STP7N80K5

STP7N80K5 Overview

Product belongs to the SuperMESH5 series. Tube is the packaging method for this product Weight of 0.011640 oz Through Hole Mounting-Style TO-220-3 Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Through Hole mounting type Supplier device package: TO-220 This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. 800V This product has an 360pF @ 100V value of 300pF @ 25V. This product's Standard. 6A (Tc) continuous drain-ID current at 25°C; This product has an 1.2 Ohm @ 3A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 110 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 20.2 ns of 16 ns. This product has a 8.3 ns of 16 ns. This product's 30 V. The ID of continuous drain current is 6 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 800 V. This product has a 4 V Vgs-th gate-source threshold voltage for efficient power management. The 1.2 Ohms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 11.3 ns This product has a 23.7 ns. Qg-Gate-Charge is 13.4 nC.

STP7N80K5 Image

STP7N80K5 Specifications

• Manufacturer STMicroelectronics
• Product Category FETs - Single
• Series SuperMESH5
• Packaging Tube
• Unit-Weight 0.011640 oz
• Mounting-Style Through Hole
• Package-Case TO-220-3
• Technology Si
• Operating-Temperature -55°C ~ 150°C (TJ)
• Mounting-Type Through Hole
• Supplier-Device-Package TO-220
• FET-Type MOSFET N-Channel, Metal Oxide
• Power-Max 110W
• Drain-to-Source-Voltage-Vdss 800V
• Input-Capacitance-Ciss-Vds 360pF @ 100V
• FET-Feature Standard
• Current-Continuous-Drain-Id-25°C 6A (Tc)
• Rds-On-Max-Id-Vgs 1.2 Ohm @ 3A, 10V
• Vgs-th-Max-Id 5V @ 100μA
• Gate-Charge-Qg-Vgs 13.4nC @ 10V
• Pd-Power-Dissipation 110 W
• Maximum-Operating-Temperature + 150 C
• Minimum-Operating-Temperature - 55 C
• Fall-Time 20.2 ns
• Rise-Time 8.3 ns
• Vgs-Gate-Source-Voltage 30 V
• Id-Continuous-Drain-Current 6 A
• Vds-Drain-Source-Breakdown-Voltage 800 V
• Vgs-th-Gate-Source-Threshold-Voltage 4 V
• Rds-On-Drain-Source-Resistance 1.2 Ohms
• Transistor-Polarity N-Channel
• Typical-Turn-Off-Delay-Time 11.3 ns
• Typical-Turn-On-Delay-Time 23.7 ns
• Qg-Gate-Charge 13.4 nC

STP7N80K5 FAQ

• A: Is the cutoff frequency of the product Series?

  Q: Yes, the product's Series is indeed SuperMESH5

• A: What is the Packaging of the product?

  Q: The Packaging of the product is Tube.

• A: Is the cutoff frequency of the product Unit-Weight?

  Q: Yes, the product's Unit-Weight is indeed 0.011640 oz

• A: At what frequency does the Mounting-Style?

  Q: The product Mounting-Style is Through Hole.

• A: Is the cutoff frequency of the product Package-Case?

  Q: Yes, the product's Package-Case is indeed TO-220-3

• A: What is the Technology of the product?

  Q: The Technology of the product is Si.

• A: Is the cutoff frequency of the product Operating-Temperature?

  Q: Yes, the product's Operating-Temperature is indeed -55°C ~ 150°C (TJ)

• A: What is the Mounting-Type of the product?

  Q: The Mounting-Type of the product is Through Hole.

• A: At what frequency does the Supplier-Device-Package?

  Q: The product Supplier-Device-Package is TO-220.

• A: At what frequency does the FET-Type?

  Q: The product FET-Type is MOSFET N-Channel, Metal Oxide.

• A: Is the cutoff frequency of the product Drain-to-Source-Voltage-Vdss?

  Q: Yes, the product's Drain-to-Source-Voltage-Vdss is indeed 800V

• A: Is the cutoff frequency of the product Input-Capacitance-Ciss-Vds?

  Q: Yes, the product's Input-Capacitance-Ciss-Vds is indeed 360pF @ 100V

• A: What is the FET-Feature of the product?

  Q: The FET-Feature of the product is Standard.

• A: Is the cutoff frequency of the product Current-Continuous-Drain-Id-25°C?

  Q: Yes, the product's Current-Continuous-Drain-Id-25°C is indeed 6A (Tc)

• A: Is the cutoff frequency of the product Rds-On-Max-Id-Vgs?

  Q: Yes, the product's Rds-On-Max-Id-Vgs is indeed 1.2 Ohm @ 3A, 10V

• A: Is the cutoff frequency of the product Pd-Power-Dissipation?

  Q: Yes, the product's Pd-Power-Dissipation is indeed 110 W

• A: What is the Maximum-Operating-Temperature of the product?

  Q: The Maximum-Operating-Temperature of the product is + 150 C.

• A: At what frequency does the Minimum-Operating-Temperature?

  Q: The product Minimum-Operating-Temperature is - 55 C.

• A: What is the Fall-Time of the product?

  Q: The Fall-Time of the product is 20.2 ns.

• A: What is the Rise-Time of the product?

  Q: The Rise-Time of the product is 8.3 ns.

• A: At what frequency does the Vgs-Gate-Source-Voltage?

  Q: The product Vgs-Gate-Source-Voltage is 30 V.

• A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

  Q: Yes, the product's Id-Continuous-Drain-Current is indeed 6 A

• A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

  Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 800 V

• A: At what frequency does the Vgs-th-Gate-Source-Threshold-Voltage?

  Q: The product Vgs-th-Gate-Source-Threshold-Voltage is 4 V.

• A: At what frequency does the Rds-On-Drain-Source-Resistance?

  Q: The product Rds-On-Drain-Source-Resistance is 1.2 Ohms.

• A: Is the cutoff frequency of the product Transistor-Polarity?

  Q: Yes, the product's Transistor-Polarity is indeed N-Channel

• A: At what frequency does the Typical-Turn-Off-Delay-Time?

  Q: The product Typical-Turn-Off-Delay-Time is 11.3 ns.

• A: Is the cutoff frequency of the product Typical-Turn-On-Delay-Time?

  Q: Yes, the product's Typical-Turn-On-Delay-Time is indeed 23.7 ns

• A: At what frequency does the Qg-Gate-Charge?

  Q: The product Qg-Gate-Charge is 13.4 nC.