STU4N80K5

Mfr. #: STU4N80K5
제조사: STMicroelectronics
설명: IGBT Transistors MOSFET N-Ch 800V 2.1Ohm typ 3A Zener-protected
수명 주기: 이 제조업체의 새 제품입니다.
데이터 시트: STU4N80K5 데이터 시트
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STU4N80K5 Overview

Product belongs to the MDmesh K5 series. Tube is the packaging method for this product Weight of 0.139332 oz Through Hole Mounting-Style IPAK-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 60 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 21 ns of 16 ns. This product has a 15 ns of 16 ns. This product's 30 V. The ID of continuous drain current is 3 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 800 V. This product has a 3 V Vgs-th gate-source threshold voltage for efficient power management. The 2.5 Ohms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 36 ns This product has a 16.5 ns. Qg-Gate-Charge is 10.5 nC. This product operates in Enhancement channel mode for optimal performance.

STU4N80K5 Image

STU4N80K5

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STU4N80K5 Specifications
  • Manufacturer STMicroelectronics
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series MDmesh K5
  • Packaging Tube
  • Unit-Weight 0.139332 oz
  • Mounting-Style Through Hole
  • Package-Case IPAK-3
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 60 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 21 ns
  • Rise-Time 15 ns
  • Vgs-Gate-Source-Voltage 30 V
  • Id-Continuous-Drain-Current 3 A
  • Vds-Drain-Source-Breakdown-Voltage 800 V
  • Vgs-th-Gate-Source-Threshold-Voltage 3 V
  • Rds-On-Drain-Source-Resistance 2.5 Ohms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 36 ns
  • Typical-Turn-On-Delay-Time 16.5 ns
  • Qg-Gate-Charge 10.5 nC
  • Channel-Mode Enhancement

STU4N80K5

STU4N80K5 Specifications

STU4N80K5 FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed MDmesh K5

  • A: Is the cutoff frequency of the product Packaging?

    Q: Yes, the product's Packaging is indeed Tube

  • A: Is the cutoff frequency of the product Unit-Weight?

    Q: Yes, the product's Unit-Weight is indeed 0.139332 oz

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed Through Hole

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is IPAK-3.

  • A: Is the cutoff frequency of the product Technology?

    Q: Yes, the product's Technology is indeed Si

  • A: At what frequency does the Number-of-Channels?

    Q: The product Number-of-Channels is 1 Channel.

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is Single.

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is 1 N-Channel.

  • A: Is the cutoff frequency of the product Pd-Power-Dissipation?

    Q: Yes, the product's Pd-Power-Dissipation is indeed 60 W

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

  • A: What is the Minimum-Operating-Temperature of the product?

    Q: The Minimum-Operating-Temperature of the product is - 55 C.

  • A: Is the cutoff frequency of the product Fall-Time?

    Q: Yes, the product's Fall-Time is indeed 21 ns

  • A: At what frequency does the Rise-Time?

    Q: The product Rise-Time is 15 ns.

  • A: What is the Vgs-Gate-Source-Voltage of the product?

    Q: The Vgs-Gate-Source-Voltage of the product is 30 V.

  • A: At what frequency does the Id-Continuous-Drain-Current?

    Q: The product Id-Continuous-Drain-Current is 3 A.

  • A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

    Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 800 V

  • A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?

    Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 3 V.

  • A: At what frequency does the Rds-On-Drain-Source-Resistance?

    Q: The product Rds-On-Drain-Source-Resistance is 2.5 Ohms.

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is N-Channel.

  • A: At what frequency does the Typical-Turn-Off-Delay-Time?

    Q: The product Typical-Turn-Off-Delay-Time is 36 ns.

  • A: At what frequency does the Typical-Turn-On-Delay-Time?

    Q: The product Typical-Turn-On-Delay-Time is 16.5 ns.

  • A: What is the Qg-Gate-Charge of the product?

    Q: The Qg-Gate-Charge of the product is 10.5 nC.

  • A: What is the Channel-Mode of the product?

    Q: The Channel-Mode of the product is Enhancement.

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