| Mfr. #: | STU6NF10 |
|---|---|
| 제조사: | STMicroelectronics |
| 설명: | RF Bipolar Transistors MOSFET N-Ch, 100V-0.22ohms 6A |
| 수명 주기: | 이 제조업체의 새 제품입니다. |
| 데이터 시트: | STU6NF10 데이터 시트 |
RoHS compliant with Details Input bias current of Through Hole Package type is IPAK-3 Single 1 Channel for basic signal processing The transistor polarity is N-Channel. 100 V is the Vds - Drain-Source Breakdown Voltage Continuous Drain Current identified as 6 A; The Rds On - Drain-Source Resistance of the product is 250 mOhms. The Vgs - Gate-Source Voltage attribute for this product is 20 V. Maximum Operating Temperature: + 175 C Si is the technology used. Tube is the packaging method for this product Enhancement Channel Mode Configuration Single Fall Time of 3 ns - 65 C minimum operating temperature The power dissipation is 30 W. 10 ns Rise Time Product belongs to the N-channel STripFET series. 1 N-Channel Transistor Type Typical Turn-Off Delay Time of 20 ns; The 6 ns typical turn-on delay time The Unit Weight is 0.139332 oz.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STU6NF10 Specifications
A: Is the cutoff frequency of the product RoHS?
Q: Yes, the product's RoHS is indeed Details
A: Is the cutoff frequency of the product Mounting Style?
Q: Yes, the product's Mounting Style is indeed Through Hole
A: Is the cutoff frequency of the product Package / Case?
Q: Yes, the product's Package / Case is indeed IPAK-3
A: What is the Number of Channels of the product?
Q: The Number of Channels of the product is 1 Channel.
A: Is the cutoff frequency of the product Transistor Polarity?
Q: Yes, the product's Transistor Polarity is indeed N-Channel
A: At what frequency does the Vds - Drain-Source Breakdown Voltage?
Q: The product Vds - Drain-Source Breakdown Voltage is 100 V.
A: At what frequency does the Id - Continuous Drain Current?
Q: The product Id - Continuous Drain Current is 6 A.
A: Is the cutoff frequency of the product Rds On - Drain-Source Resistance?
Q: Yes, the product's Rds On - Drain-Source Resistance is indeed 250 mOhms
A: What is the Vgs - Gate-Source Voltage of the product?
Q: The Vgs - Gate-Source Voltage of the product is 20 V.
A: At what frequency does the Maximum Operating Temperature?
Q: The product Maximum Operating Temperature is + 175 C.
A: At what frequency does the Technology?
Q: The product Technology is Si.
A: At what frequency does the Packaging?
Q: The product Packaging is Tube.
A: Is the cutoff frequency of the product Channel Mode?
Q: Yes, the product's Channel Mode is indeed Enhancement
A: At what frequency does the Configuration?
Q: The product Configuration is Single.
A: What is the Fall Time of the product?
Q: The Fall Time of the product is 3 ns.
A: Is the cutoff frequency of the product Minimum Operating Temperature?
Q: Yes, the product's Minimum Operating Temperature is indeed - 65 C
A: What is the Pd - Power Dissipation of the product?
Q: The Pd - Power Dissipation of the product is 30 W.
A: At what frequency does the Rise Time?
Q: The product Rise Time is 10 ns.
A: What is the Series of the product?
Q: The Series of the product is N-channel STripFET.
A: What is the Transistor Type of the product?
Q: The Transistor Type of the product is 1 N-Channel.
A: Is the cutoff frequency of the product Typical Turn-Off Delay Time?
Q: Yes, the product's Typical Turn-Off Delay Time is indeed 20 ns
A: At what frequency does the Typical Turn-On Delay Time?
Q: The product Typical Turn-On Delay Time is 6 ns.
A: What is the Unit Weight of the product?
Q: The Unit Weight of the product is 0.139332 oz.