STU9N65M2

Mfr. #: STU9N65M2
제조사: STMicroelectronics
설명: MOSFET N-CH 650V 5A IPAK
수명 주기: 이 제조업체의 새 제품입니다.
데이터 시트: STU9N65M2 데이터 시트
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STU9N65M2 Overview

Product belongs to the MDmesh M2 series. Tube is the packaging method for this product Weight of 0.139332 oz Through Hole Mounting-Style Trade name: MDmesh. IPAK-3 Si is the technology used. Number of channels: 1 Channel Transistor type: 1 N-Channel Power-off control: 60 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 18 ns of 16 ns. This product has a 6.6 ns of 16 ns. This product's 25 V. The ID of continuous drain current is 5 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 650 V. This product has a 3 V Vgs-th gate-source threshold voltage for efficient power management. The 900 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 22.5 ns This product has a 7.5 ns. Qg-Gate-Charge is 10 nC.

STU9N65M2 Image

STU9N65M2

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STU9N65M2 Specifications
  • Manufacturer STMicroelectronics
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series MDmesh M2
  • Packaging Tube
  • Unit-Weight 0.139332 oz
  • Mounting-Style Through Hole
  • Tradename MDmesh
  • Package-Case IPAK-3
  • Technology Si
  • Number-of-Channels 1 Channel
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 60 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 18 ns
  • Rise-Time 6.6 ns
  • Vgs-Gate-Source-Voltage 25 V
  • Id-Continuous-Drain-Current 5 A
  • Vds-Drain-Source-Breakdown-Voltage 650 V
  • Vgs-th-Gate-Source-Threshold-Voltage 3 V
  • Rds-On-Drain-Source-Resistance 900 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 22.5 ns
  • Typical-Turn-On-Delay-Time 7.5 ns
  • Qg-Gate-Charge 10 nC

STU9N65M2

STU9N65M2 Specifications

STU9N65M2 FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed MDmesh M2

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Tube.

  • A: Is the cutoff frequency of the product Unit-Weight?

    Q: Yes, the product's Unit-Weight is indeed 0.139332 oz

  • A: At what frequency does the Mounting-Style?

    Q: The product Mounting-Style is Through Hole.

  • A: What is the Tradename of the product?

    Q: The Tradename of the product is MDmesh.

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is IPAK-3.

  • A: At what frequency does the Technology?

    Q: The product Technology is Si.

  • A: Is the cutoff frequency of the product Number-of-Channels?

    Q: Yes, the product's Number-of-Channels is indeed 1 Channel

  • A: At what frequency does the Transistor-Type?

    Q: The product Transistor-Type is 1 N-Channel.

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 60 W.

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

  • A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

    Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C

  • A: At what frequency does the Fall-Time?

    Q: The product Fall-Time is 18 ns.

  • A: What is the Rise-Time of the product?

    Q: The Rise-Time of the product is 6.6 ns.

  • A: What is the Vgs-Gate-Source-Voltage of the product?

    Q: The Vgs-Gate-Source-Voltage of the product is 25 V.

  • A: What is the Id-Continuous-Drain-Current of the product?

    Q: The Id-Continuous-Drain-Current of the product is 5 A.

  • A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

    Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 650 V

  • A: Is the cutoff frequency of the product Vgs-th-Gate-Source-Threshold-Voltage?

    Q: Yes, the product's Vgs-th-Gate-Source-Threshold-Voltage is indeed 3 V

  • A: What is the Rds-On-Drain-Source-Resistance of the product?

    Q: The Rds-On-Drain-Source-Resistance of the product is 900 mOhms.

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed N-Channel

  • A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?

    Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 22.5 ns

  • A: Is the cutoff frequency of the product Typical-Turn-On-Delay-Time?

    Q: Yes, the product's Typical-Turn-On-Delay-Time is indeed 7.5 ns

  • A: Is the cutoff frequency of the product Qg-Gate-Charge?

    Q: Yes, the product's Qg-Gate-Charge is indeed 10 nC

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