STW12N150K5

Mfr. #: STW12N150K5
제조사: STMicroelectronics
설명: MOSFET N-CH 1500V 7A TO-247
수명 주기: 이 제조업체의 새 제품입니다.
데이터 시트: STW12N150K5 데이터 시트
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STW12N150K5 Overview

Product belongs to the MDmesh K5 series. Tube is the packaging method for this product Weight of 1.340411 oz Through Hole Mounting-Style TO-247-3 Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Through Hole mounting type Number of channels: 1 Channel Supplier device package: TO-247 This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. 1500V (1.5kV) This product has an 1360pF @ 100V value of 300pF @ 25V. This product's Standard. 7A (Tc) continuous drain-ID current at 25°C; This product has an 1.9 Ohm @ 3.5A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 250 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 37 ns of 16 ns. This product has a 8 ns of 16 ns. This product's +/- 30 V. The ID of continuous drain current is 7 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 1.5 kV. This product has a 3 V to 5 V Vgs-th gate-source threshold voltage for efficient power management. The 1.9 Ohms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 90 ns This product has a 25 ns. Qg-Gate-Charge is 47 nC. This product operates in Enhancement channel mode for optimal performance.

STW12N150K5 Image

STW12N150K5

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STW12N150K5 Specifications
  • Manufacturer STMicroelectronics
  • Product Category FETs - Single
  • Series MDmesh K5
  • Packaging Tube
  • Unit-Weight 1.340411 oz
  • Mounting-Style Through Hole
  • Package-Case TO-247-3
  • Technology Si
  • Operating-Temperature -55°C ~ 150°C (TJ)
  • Mounting-Type Through Hole
  • Number-of-Channels 1 Channel
  • Supplier-Device-Package TO-247
  • FET-Type MOSFET N-Channel, Metal Oxide
  • Power-Max 250W
  • Drain-to-Source-Voltage-Vdss 1500V (1.5kV)
  • Input-Capacitance-Ciss-Vds 1360pF @ 100V
  • FET-Feature Standard
  • Current-Continuous-Drain-Id-25°C 7A (Tc)
  • Rds-On-Max-Id-Vgs 1.9 Ohm @ 3.5A, 10V
  • Vgs-th-Max-Id 5V @ 100μA
  • Gate-Charge-Qg-Vgs 47nC @ 10V
  • Pd-Power-Dissipation 250 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 37 ns
  • Rise-Time 8 ns
  • Vgs-Gate-Source-Voltage +/- 30 V
  • Id-Continuous-Drain-Current 7 A
  • Vds-Drain-Source-Breakdown-Voltage 1.5 kV
  • Vgs-th-Gate-Source-Threshold-Voltage 3 V to 5 V
  • Rds-On-Drain-Source-Resistance 1.9 Ohms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 90 ns
  • Typical-Turn-On-Delay-Time 25 ns
  • Qg-Gate-Charge 47 nC
  • Channel-Mode Enhancement

STW12N150K5

STW12N150K5 Specifications

STW12N150K5 FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is MDmesh K5.

  • A: Is the cutoff frequency of the product Packaging?

    Q: Yes, the product's Packaging is indeed Tube

  • A: What is the Unit-Weight of the product?

    Q: The Unit-Weight of the product is 1.340411 oz.

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed Through Hole

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is TO-247-3.

  • A: At what frequency does the Technology?

    Q: The product Technology is Si.

  • A: Is the cutoff frequency of the product Operating-Temperature?

    Q: Yes, the product's Operating-Temperature is indeed -55°C ~ 150°C (TJ)

  • A: At what frequency does the Mounting-Type?

    Q: The product Mounting-Type is Through Hole.

  • A: What is the Number-of-Channels of the product?

    Q: The Number-of-Channels of the product is 1 Channel.

  • A: Is the cutoff frequency of the product Supplier-Device-Package?

    Q: Yes, the product's Supplier-Device-Package is indeed TO-247

  • A: Is the cutoff frequency of the product FET-Type?

    Q: Yes, the product's FET-Type is indeed MOSFET N-Channel, Metal Oxide

  • A: Is the cutoff frequency of the product Drain-to-Source-Voltage-Vdss?

    Q: Yes, the product's Drain-to-Source-Voltage-Vdss is indeed 1500V (1.5kV)

  • A: Is the cutoff frequency of the product Input-Capacitance-Ciss-Vds?

    Q: Yes, the product's Input-Capacitance-Ciss-Vds is indeed 1360pF @ 100V

  • A: Is the cutoff frequency of the product FET-Feature?

    Q: Yes, the product's FET-Feature is indeed Standard

  • A: Is the cutoff frequency of the product Current-Continuous-Drain-Id-25°C?

    Q: Yes, the product's Current-Continuous-Drain-Id-25°C is indeed 7A (Tc)

  • A: What is the Rds-On-Max-Id-Vgs of the product?

    Q: The Rds-On-Max-Id-Vgs of the product is 1.9 Ohm @ 3.5A, 10V.

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 250 W.

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

  • A: What is the Minimum-Operating-Temperature of the product?

    Q: The Minimum-Operating-Temperature of the product is - 55 C.

  • A: At what frequency does the Fall-Time?

    Q: The product Fall-Time is 37 ns.

  • A: What is the Rise-Time of the product?

    Q: The Rise-Time of the product is 8 ns.

  • A: What is the Vgs-Gate-Source-Voltage of the product?

    Q: The Vgs-Gate-Source-Voltage of the product is +/- 30 V.

  • A: At what frequency does the Id-Continuous-Drain-Current?

    Q: The product Id-Continuous-Drain-Current is 7 A.

  • A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

    Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 1.5 kV

  • A: At what frequency does the Vgs-th-Gate-Source-Threshold-Voltage?

    Q: The product Vgs-th-Gate-Source-Threshold-Voltage is 3 V to 5 V.

  • A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

    Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 1.9 Ohms

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is N-Channel.

  • A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?

    Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 90 ns

  • A: What is the Typical-Turn-On-Delay-Time of the product?

    Q: The Typical-Turn-On-Delay-Time of the product is 25 ns.

  • A: Is the cutoff frequency of the product Qg-Gate-Charge?

    Q: Yes, the product's Qg-Gate-Charge is indeed 47 nC

  • A: Is the cutoff frequency of the product Channel-Mode?

    Q: Yes, the product's Channel-Mode is indeed Enhancement

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