STW18N65M5

Mfr. #: STW18N65M5
제조사: STMicroelectronics
설명: MOSFET N CH 650V 15A TO-247
수명 주기: 이 제조업체의 새 제품입니다.
데이터 시트: STW18N65M5 데이터 시트
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STW18N65M5 Overview

Product belongs to the MDmesh M5 series. Tube is the packaging method for this product Weight of 1.340411 oz Through Hole Mounting-Style TO-247-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 110 W This product has a 9 ns of 16 ns. This product has a 7 ns of 16 ns. This product's 25 V. The ID of continuous drain current is 9.4 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 650 V. This product has a 5 V Vgs-th gate-source threshold voltage for efficient power management. The 220 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 31 nC.

STW18N65M5 Image

STW18N65M5

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STW18N65M5 Specifications
  • Manufacturer STMicroelectronics
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series MDmesh M5
  • Packaging Tube
  • Unit-Weight 1.340411 oz
  • Mounting-Style Through Hole
  • Package-Case TO-247-3
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 110 W
  • Fall-Time 9 ns
  • Rise-Time 7 ns
  • Vgs-Gate-Source-Voltage 25 V
  • Id-Continuous-Drain-Current 9.4 A
  • Vds-Drain-Source-Breakdown-Voltage 650 V
  • Vgs-th-Gate-Source-Threshold-Voltage 5 V
  • Rds-On-Drain-Source-Resistance 220 mOhms
  • Transistor-Polarity N-Channel
  • Qg-Gate-Charge 31 nC

STW18N65M5

STW18N65M5 Specifications

STW18N65M5 FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed MDmesh M5

  • A: Is the cutoff frequency of the product Packaging?

    Q: Yes, the product's Packaging is indeed Tube

  • A: What is the Unit-Weight of the product?

    Q: The Unit-Weight of the product is 1.340411 oz.

  • A: At what frequency does the Mounting-Style?

    Q: The product Mounting-Style is Through Hole.

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is TO-247-3.

  • A: At what frequency does the Technology?

    Q: The product Technology is Si.

  • A: Is the cutoff frequency of the product Number-of-Channels?

    Q: Yes, the product's Number-of-Channels is indeed 1 Channel

  • A: At what frequency does the Configuration?

    Q: The product Configuration is Single.

  • A: At what frequency does the Transistor-Type?

    Q: The product Transistor-Type is 1 N-Channel.

  • A: At what frequency does the Pd-Power-Dissipation?

    Q: The product Pd-Power-Dissipation is 110 W.

  • A: At what frequency does the Fall-Time?

    Q: The product Fall-Time is 9 ns.

  • A: At what frequency does the Rise-Time?

    Q: The product Rise-Time is 7 ns.

  • A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

    Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 25 V

  • A: At what frequency does the Id-Continuous-Drain-Current?

    Q: The product Id-Continuous-Drain-Current is 9.4 A.

  • A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

    Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 650 V.

  • A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?

    Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 5 V.

  • A: What is the Rds-On-Drain-Source-Resistance of the product?

    Q: The Rds-On-Drain-Source-Resistance of the product is 220 mOhms.

  • A: What is the Transistor-Polarity of the product?

    Q: The Transistor-Polarity of the product is N-Channel.

  • A: What is the Qg-Gate-Charge of the product?

    Q: The Qg-Gate-Charge of the product is 31 nC.

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