STW48N60M2

STW48N60M2 Overview

Product belongs to the MDmesh M2 series. Tube is the packaging method for this product Weight of 1.340411 oz Through Hole Mounting-Style TO-247-3 Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Through Hole mounting type Number of channels: 1 Channel Supplier device package: TO-247 Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. 600V This product has an 3060pF @ 100V value of 300pF @ 25V. This product's Standard. 42A (Tc) continuous drain-ID current at 25°C; This product has an 70 mOhm @ 21A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 300 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 119 ns of 16 ns. This product has a 17 ns of 16 ns. This product's 25 V. The ID of continuous drain current is 42 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 600 V. This product has a 2 V Vgs-th gate-source threshold voltage for efficient power management. The 70 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 13 ns This product has a 18.5 ns. Qg-Gate-Charge is 70 nC. This product operates in Enhancement channel mode for optimal performance.

STW48N60M2 Image

STW48N60M2 Specifications

• Manufacturer ST
• Product Category FETs - Single
• Series MDmesh M2
• Packaging Tube
• Unit-Weight 1.340411 oz
• Mounting-Style Through Hole
• Package-Case TO-247-3
• Technology Si
• Operating-Temperature -55°C ~ 150°C (TJ)
• Mounting-Type Through Hole
• Number-of-Channels 1 Channel
• Supplier-Device-Package TO-247
• Configuration Single
• FET-Type MOSFET N-Channel, Metal Oxide
• Power-Max 300W
• Drain-to-Source-Voltage-Vdss 600V
• Input-Capacitance-Ciss-Vds 3060pF @ 100V
• FET-Feature Standard
• Current-Continuous-Drain-Id-25°C 42A (Tc)
• Rds-On-Max-Id-Vgs 70 mOhm @ 21A, 10V
• Vgs-th-Max-Id 4V @ 250μA
• Gate-Charge-Qg-Vgs 70nC @ 10V
• Pd-Power-Dissipation 300 W
• Maximum-Operating-Temperature + 150 C
• Minimum-Operating-Temperature - 55 C
• Fall-Time 119 ns
• Rise-Time 17 ns
• Vgs-Gate-Source-Voltage 25 V
• Id-Continuous-Drain-Current 42 A
• Vds-Drain-Source-Breakdown-Voltage 600 V
• Vgs-th-Gate-Source-Threshold-Voltage 2 V
• Rds-On-Drain-Source-Resistance 70 mOhms
• Transistor-Polarity N-Channel
• Typical-Turn-Off-Delay-Time 13 ns
• Typical-Turn-On-Delay-Time 18.5 ns
• Qg-Gate-Charge 70 nC
• Channel-Mode Enhancement

STW48N60M2 FAQ

• A: Is the cutoff frequency of the product Series?

  Q: Yes, the product's Series is indeed MDmesh M2

• A: At what frequency does the Packaging?

  Q: The product Packaging is Tube.

• A: What is the Unit-Weight of the product?

  Q: The Unit-Weight of the product is 1.340411 oz.

• A: At what frequency does the Mounting-Style?

  Q: The product Mounting-Style is Through Hole.

• A: At what frequency does the Package-Case?

  Q: The product Package-Case is TO-247-3.

• A: At what frequency does the Technology?

  Q: The product Technology is Si.

• A: Is the cutoff frequency of the product Operating-Temperature?

  Q: Yes, the product's Operating-Temperature is indeed -55°C ~ 150°C (TJ)

• A: At what frequency does the Mounting-Type?

  Q: The product Mounting-Type is Through Hole.

• A: What is the Number-of-Channels of the product?

  Q: The Number-of-Channels of the product is 1 Channel.

• A: What is the Supplier-Device-Package of the product?

  Q: The Supplier-Device-Package of the product is TO-247.

• A: At what frequency does the Configuration?

  Q: The product Configuration is Single.

• A: What is the FET-Type of the product?

  Q: The FET-Type of the product is MOSFET N-Channel, Metal Oxide.

• A: Is the cutoff frequency of the product Drain-to-Source-Voltage-Vdss?

  Q: Yes, the product's Drain-to-Source-Voltage-Vdss is indeed 600V

• A: Is the cutoff frequency of the product Input-Capacitance-Ciss-Vds?

  Q: Yes, the product's Input-Capacitance-Ciss-Vds is indeed 3060pF @ 100V

• A: What is the FET-Feature of the product?

  Q: The FET-Feature of the product is Standard.

• A: At what frequency does the Current-Continuous-Drain-Id-25°C?

  Q: The product Current-Continuous-Drain-Id-25°C is 42A (Tc).

• A: At what frequency does the Rds-On-Max-Id-Vgs?

  Q: The product Rds-On-Max-Id-Vgs is 70 mOhm @ 21A, 10V.

• A: What is the Pd-Power-Dissipation of the product?

  Q: The Pd-Power-Dissipation of the product is 300 W.

• A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

  Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

• A: What is the Minimum-Operating-Temperature of the product?

  Q: The Minimum-Operating-Temperature of the product is - 55 C.

• A: What is the Fall-Time of the product?

  Q: The Fall-Time of the product is 119 ns.

• A: What is the Rise-Time of the product?

  Q: The Rise-Time of the product is 17 ns.

• A: What is the Vgs-Gate-Source-Voltage of the product?

  Q: The Vgs-Gate-Source-Voltage of the product is 25 V.

• A: At what frequency does the Id-Continuous-Drain-Current?

  Q: The product Id-Continuous-Drain-Current is 42 A.

• A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

  Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 600 V.

• A: At what frequency does the Vgs-th-Gate-Source-Threshold-Voltage?

  Q: The product Vgs-th-Gate-Source-Threshold-Voltage is 2 V.

• A: At what frequency does the Rds-On-Drain-Source-Resistance?

  Q: The product Rds-On-Drain-Source-Resistance is 70 mOhms.

• A: At what frequency does the Transistor-Polarity?

  Q: The product Transistor-Polarity is N-Channel.

• A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?

  Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 13 ns

• A: What is the Typical-Turn-On-Delay-Time of the product?

  Q: The Typical-Turn-On-Delay-Time of the product is 18.5 ns.

• A: What is the Qg-Gate-Charge of the product?

  Q: The Qg-Gate-Charge of the product is 70 nC.

• A: What is the Channel-Mode of the product?

  Q: The Channel-Mode of the product is Enhancement.