STY139N65M5

STY139N65M5 Overview

Product belongs to the MDmesh V series. Tube is the packaging method for this product Weight of 1.340411 oz Through Hole Mounting-Style TO-247-3 Si is the technology used. Operational temperature range: 150°C (TJ) Through Hole mounting type Number of channels: 1 Channel Supplier device package: MAX247 Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 650V This product has an 15600pF @ 100V value of 300pF @ 25V. This product's Standard. 130A (Tc) continuous drain-ID current at 25°C; This product has an 17 mOhm @ 65A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 625 mW This product's 25 V. The ID of continuous drain current is 130 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 650 V. The 14 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 363 nC.

STY139N65M5 Image

STY139N65M5 Specifications

• Manufacturer ST
• Product Category FETs - Single
• Series MDmesh V
• Packaging Tube
• Unit-Weight 1.340411 oz
• Mounting-Style Through Hole
• Package-Case TO-247-3
• Technology Si
• Operating-Temperature 150°C (TJ)
• Mounting-Type Through Hole
• Number-of-Channels 1 Channel
• Supplier-Device-Package MAX247
• Configuration Single
• FET-Type MOSFET N-Channel, Metal Oxide
• Power-Max 625W
• Transistor-Type 1 N-Channel
• Drain-to-Source-Voltage-Vdss 650V
• Input-Capacitance-Ciss-Vds 15600pF @ 100V
• FET-Feature Standard
• Current-Continuous-Drain-Id-25°C 130A (Tc)
• Rds-On-Max-Id-Vgs 17 mOhm @ 65A, 10V
• Vgs-th-Max-Id 5V @ 250μA
• Gate-Charge-Qg-Vgs 363nC @ 10V
• Pd-Power-Dissipation 625 mW
• Vgs-Gate-Source-Voltage 25 V
• Id-Continuous-Drain-Current 130 A
• Vds-Drain-Source-Breakdown-Voltage 650 V
• Rds-On-Drain-Source-Resistance 14 mOhms
• Transistor-Polarity N-Channel
• Qg-Gate-Charge 363 nC

STY139N65M5 FAQ

• A: What is the Series of the product?

  Q: The Series of the product is MDmesh V.

• A: At what frequency does the Packaging?

  Q: The product Packaging is Tube.

• A: At what frequency does the Unit-Weight?

  Q: The product Unit-Weight is 1.340411 oz.

• A: Is the cutoff frequency of the product Mounting-Style?

  Q: Yes, the product's Mounting-Style is indeed Through Hole

• A: What is the Package-Case of the product?

  Q: The Package-Case of the product is TO-247-3.

• A: At what frequency does the Technology?

  Q: The product Technology is Si.

• A: At what frequency does the Operating-Temperature?

  Q: The product Operating-Temperature is 150°C (TJ).

• A: Is the cutoff frequency of the product Mounting-Type?

  Q: Yes, the product's Mounting-Type is indeed Through Hole

• A: At what frequency does the Number-of-Channels?

  Q: The product Number-of-Channels is 1 Channel.

• A: At what frequency does the Supplier-Device-Package?

  Q: The product Supplier-Device-Package is MAX247.

• A: What is the Configuration of the product?

  Q: The Configuration of the product is Single.

• A: Is the cutoff frequency of the product FET-Type?

  Q: Yes, the product's FET-Type is indeed MOSFET N-Channel, Metal Oxide

• A: What is the Transistor-Type of the product?

  Q: The Transistor-Type of the product is 1 N-Channel.

• A: At what frequency does the Drain-to-Source-Voltage-Vdss?

  Q: The product Drain-to-Source-Voltage-Vdss is 650V.

• A: What is the Input-Capacitance-Ciss-Vds of the product?

  Q: The Input-Capacitance-Ciss-Vds of the product is 15600pF @ 100V.

• A: At what frequency does the FET-Feature?

  Q: The product FET-Feature is Standard.

• A: Is the cutoff frequency of the product Current-Continuous-Drain-Id-25°C?

  Q: Yes, the product's Current-Continuous-Drain-Id-25°C is indeed 130A (Tc)

• A: At what frequency does the Rds-On-Max-Id-Vgs?

  Q: The product Rds-On-Max-Id-Vgs is 17 mOhm @ 65A, 10V.

• A: Is the cutoff frequency of the product Pd-Power-Dissipation?

  Q: Yes, the product's Pd-Power-Dissipation is indeed 625 mW

• A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

  Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 25 V

• A: At what frequency does the Id-Continuous-Drain-Current?

  Q: The product Id-Continuous-Drain-Current is 130 A.

• A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

  Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 650 V

• A: At what frequency does the Rds-On-Drain-Source-Resistance?

  Q: The product Rds-On-Drain-Source-Resistance is 14 mOhms.

• A: What is the Transistor-Polarity of the product?

  Q: The Transistor-Polarity of the product is N-Channel.

• A: What is the Qg-Gate-Charge of the product?

  Q: The Qg-Gate-Charge of the product is 363 nC.