| Mfr. #: | ULN2004AINS |
|---|---|
| 제조사: | Texas Instruments |
| 설명: | Darlington Transistors Hi-Vltg Hi-Crnt Darl Transistor Arrays |
| 수명 주기: | 이 제조업체의 새 제품입니다. |
| 데이터 시트: | ULN2004AINS 데이터 시트 |
Product belongs to the - series. Tube Alternate Packaging is the packaging method for this product 16-SOIC (0.209", 5.30mm Width) Surface Mount mounting type Supplier device package: 16-SO Transistor type: 7 NPN Darlington Maximum current collector Ic is 500mA . Maximum collector-emitter breakdown voltage of 50V DC current gain minimum (hFE) of Ic/Vce at -. Product Attribute: Vce-Saturation-Max-Ib-Ic: 1.6V @ 500μA, 350mA
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
ULN2004AINS Specifications
A: What is the Series of the product?
Q: The Series of the product is -.
A: Is the cutoff frequency of the product Packaging?
Q: Yes, the product's Packaging is indeed Tube Alternate Packaging
A: At what frequency does the Package-Case?
Q: The product Package-Case is 16-SOIC (0.209", 5.30mm Width).
A: At what frequency does the Mounting-Type?
Q: The product Mounting-Type is Surface Mount.
A: What is the Supplier-Device-Package of the product?
Q: The Supplier-Device-Package of the product is 16-SO.
A: Is the cutoff frequency of the product Transistor-Type?
Q: Yes, the product's Transistor-Type is indeed 7 NPN Darlington
A: Is the cutoff frequency of the product Current-Collector-Ic-Max?
Q: Yes, the product's Current-Collector-Ic-Max is indeed 500mA
A: Is the cutoff frequency of the product Voltage-Collector-Emitter-Breakdown-Max?
Q: Yes, the product's Voltage-Collector-Emitter-Breakdown-Max is indeed 50V
A: Is the cutoff frequency of the product DC-Current-Gain-hFE-Min-Ic-Vce?
Q: Yes, the product's DC-Current-Gain-hFE-Min-Ic-Vce is indeed -
A: Is the cutoff frequency of the product Vce-Saturation-Max-Ib-Ic?
Q: Yes, the product's Vce-Saturation-Max-Ib-Ic is indeed 1.6V @ 500μA, 350mA