VN10KN3-G

VN10KN3-G Overview

Product belongs to the - series. Alternate Packaging is the packaging method for this product Weight of 0.007760 oz Through Hole Mounting-Style TO-226-3, TO-92-3 (TO-226AA) Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Through Hole mounting type Number of channels: 1 Channel Supplier device package: TO-92-3 Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 60V This product has an 60pF @ 25V value of 300pF @ 25V. This product's Standard. 310mA (Tj) continuous drain-ID current at 25°C; This product has an 5 Ohm @ 500mA, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 1 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product's 30 V. The ID of continuous drain current is 310 mA. This product has a Vds-Drain-Source-Breakdown-Voltageof 60 V. The 5 Ohms for this product is 12 Ohms. The transistor polarity is N-Channel. This product operates in Enhancement channel mode for optimal performance.

VN10KN3-G Image

VN10KN3-G Specifications

• Manufacturer Microchip Technology
• Product Category FETs - Single
• Series -
• Packaging Alternate Packaging
• Unit-Weight 0.007760 oz
• Mounting-Style Through Hole
• Package-Case TO-226-3, TO-92-3 (TO-226AA)
• Technology Si
• Operating-Temperature -55°C ~ 150°C (TJ)
• Mounting-Type Through Hole
• Number-of-Channels 1 Channel
• Supplier-Device-Package TO-92-3
• Configuration Single
• FET-Type MOSFET N-Channel, Metal Oxide
• Power-Max 1W
• Transistor-Type 1 N-Channel
• Drain-to-Source-Voltage-Vdss 60V
• Input-Capacitance-Ciss-Vds 60pF @ 25V
• FET-Feature Standard
• Current-Continuous-Drain-Id-25°C 310mA (Tj)
• Rds-On-Max-Id-Vgs 5 Ohm @ 500mA, 10V
• Vgs-th-Max-Id 2.5V @ 1mA
• Gate-Charge-Qg-Vgs -
• Pd-Power-Dissipation 1 W
• Maximum-Operating-Temperature + 150 C
• Minimum-Operating-Temperature - 55 C
• Vgs-Gate-Source-Voltage 30 V
• Id-Continuous-Drain-Current 310 mA
• Vds-Drain-Source-Breakdown-Voltage 60 V
• Rds-On-Drain-Source-Resistance 5 Ohms
• Transistor-Polarity N-Channel
• Channel-Mode Enhancement

VN10KN3-G FAQ

• A: At what frequency does the Series?

  Q: The product Series is -.

• A: At what frequency does the Packaging?

  Q: The product Packaging is Alternate Packaging.

• A: At what frequency does the Unit-Weight?

  Q: The product Unit-Weight is 0.007760 oz.

• A: Is the cutoff frequency of the product Mounting-Style?

  Q: Yes, the product's Mounting-Style is indeed Through Hole

• A: Is the cutoff frequency of the product Package-Case?

  Q: Yes, the product's Package-Case is indeed TO-226-3, TO-92-3 (TO-226AA)

• A: What is the Technology of the product?

  Q: The Technology of the product is Si.

• A: At what frequency does the Operating-Temperature?

  Q: The product Operating-Temperature is -55°C ~ 150°C (TJ).

• A: At what frequency does the Mounting-Type?

  Q: The product Mounting-Type is Through Hole.

• A: What is the Number-of-Channels of the product?

  Q: The Number-of-Channels of the product is 1 Channel.

• A: What is the Supplier-Device-Package of the product?

  Q: The Supplier-Device-Package of the product is TO-92-3.

• A: At what frequency does the Configuration?

  Q: The product Configuration is Single.

• A: Is the cutoff frequency of the product FET-Type?

  Q: Yes, the product's FET-Type is indeed MOSFET N-Channel, Metal Oxide

• A: What is the Transistor-Type of the product?

  Q: The Transistor-Type of the product is 1 N-Channel.

• A: At what frequency does the Drain-to-Source-Voltage-Vdss?

  Q: The product Drain-to-Source-Voltage-Vdss is 60V.

• A: What is the Input-Capacitance-Ciss-Vds of the product?

  Q: The Input-Capacitance-Ciss-Vds of the product is 60pF @ 25V.

• A: What is the FET-Feature of the product?

  Q: The FET-Feature of the product is Standard.

• A: Is the cutoff frequency of the product Current-Continuous-Drain-Id-25°C?

  Q: Yes, the product's Current-Continuous-Drain-Id-25°C is indeed 310mA (Tj)

• A: Is the cutoff frequency of the product Rds-On-Max-Id-Vgs?

  Q: Yes, the product's Rds-On-Max-Id-Vgs is indeed 5 Ohm @ 500mA, 10V

• A: What is the Pd-Power-Dissipation of the product?

  Q: The Pd-Power-Dissipation of the product is 1 W.

• A: What is the Maximum-Operating-Temperature of the product?

  Q: The Maximum-Operating-Temperature of the product is + 150 C.

• A: What is the Minimum-Operating-Temperature of the product?

  Q: The Minimum-Operating-Temperature of the product is - 55 C.

• A: What is the Vgs-Gate-Source-Voltage of the product?

  Q: The Vgs-Gate-Source-Voltage of the product is 30 V.

• A: At what frequency does the Id-Continuous-Drain-Current?

  Q: The product Id-Continuous-Drain-Current is 310 mA.

• A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

  Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 60 V.

• A: At what frequency does the Rds-On-Drain-Source-Resistance?

  Q: The product Rds-On-Drain-Source-Resistance is 5 Ohms.

• A: Is the cutoff frequency of the product Transistor-Polarity?

  Q: Yes, the product's Transistor-Polarity is indeed N-Channel

• A: At what frequency does the Channel-Mode?

  Q: The product Channel-Mode is Enhancement.