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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| SI4174DY-T1-GE3 DISTI # V72:2272_09215542 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 12A 8-Pin SOIC N T/R RoHS: Compliant | 819 |
|
| SI4174DY-T1-GE3 DISTI # V36:1790_09215542 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 12A 8-Pin SOIC N T/R RoHS: Compliant | 0 |
|
| SI4174DY-T1-GE3 DISTI # SI4174DY-T1-GE3CT-ND | Vishay Siliconix | MOSFET N-CH 30V 17A 8-SOIC Min Qty: 1 Container: Cut Tape (CT) | 2367In Stock |
|
| SI4174DY-T1-GE3 DISTI # SI4174DY-T1-GE3DKR-ND | Vishay Siliconix | MOSFET N-CH 30V 17A 8-SOIC Min Qty: 1 Container: Digi-Reel® | 2367In Stock |
|
| SI4174DY-T1-GE3 DISTI # SI4174DY-T1-GE3TR-ND | Vishay Siliconix | MOSFET N-CH 30V 17A 8-SOIC Min Qty: 2500 Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
| SI4174DY-T1-GE3 DISTI # 34789856 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 12A 8-Pin SOIC N T/R RoHS: Compliant | 5000 |
|
| SI4174DY-T1-GE3 DISTI # 34797530 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 12A 8-Pin SOIC N T/R RoHS: Compliant | 819 |
|
| SI4174DY-T1-GE3 DISTI # SI4174DY-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 12A 8-Pin SOIC N T/R (Alt: SI4174DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel | Asia - 0 | |
| SI4174DY-T1-GE3 DISTI # SI4174DY-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 12A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4174DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Reel | Americas - 0 |
|
| SI4174DY-T1-GE3 DISTI # 90R9128 | Vishay Intertechnologies | MOSFET,N CHANNEL,30V,17A,SO8,Transistor Polarity:N Channel,Continuous Drain Current Id:17A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0078ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V,No. of Pins:8Pins RoHS Compliant: Yes RoHS: Compliant | 284 |
|
| SI4174DY-T1-GE3 DISTI # 781-SI4174DY-T1-GE3 | Vishay Intertechnologies | MOSFET 30V Vds 20V Vgs SO-8 RoHS: Compliant | 8595 |
|
| SI4174DY-T1-GE3 | Vishay Intertechnologies | MOSFET 30V Vds 20V Vgs SO-8 | Americas - |
|
| SI4174DY-T1-GE3 | Vishay Intertechnologies | 10000 | ||
| SI4174DY-T1-GE3 DISTI # SI4174DY-T1-GE3 | Vishay Intertechnologies | Transistor: N-MOSFET,unipolar,30V,13.5A,3.2W,SO8 | 5 |
|
| SI4174DY-T1-GE3 DISTI # SI4174DY-GE3 | Vishay Intertechnologies | N-Ch 30V 17A 2,5W 0,0095R SO8 RoHS: Compliant | 350 |
|
| SI4174DYT1GE3 | Vishay Intertechnologies | Small Signal Field-Effect Transistor, 17A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA RoHS: Compliant | Europe - 2500 | |
| SI4174DY-T1-GE3 DISTI # 1840422 | Vishay Intertechnologies | MOSFET,N CH,30V,17A,SO8 RoHS: Compliant | 1164 |
|
| SI4174DY-T1-GE3 DISTI # 1840422 | Vishay Intertechnologies | MOSFET,N CH,30V,17A,SO8 RoHS: Compliant | 284 |
|
| 영상 | 부분 # | 설명 |
|---|---|---|
|
Mfr.#: SI4174DY-T1-GE3 OMO.#: OMO-SI4174DY-T1-GE3 |
MOSFET 30V Vds 20V Vgs SO-8 |
|
Mfr.#: SI4174DY OMO.#: OMO-SI4174DY-1190 |
신규 및 오리지널 |
|
|
Mfr.#: SI4174DY-T1-E3 OMO.#: OMO-SI4174DY-T1-E3-1190 |
신규 및 오리지널 |
|
|
Mfr.#: SI4174DY-T1-GE1 OMO.#: OMO-SI4174DY-T1-GE1-1190 |
신규 및 오리지널 |
|
Mfr.#: SI4174DY-T1-GE3 OMO.#: OMO-SI4174DY-T1-GE3-VISHAY |
MOSFET N-CH 30V 17A 8-SOIC |