IRF7492PBF

IRF7492PBF
Mfr. #:
IRF7492PBF
제조사:
Infineon / IR
설명:
MOSFET 200V 1 N-CH HEXFET 79mOhms 39nC
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IRF7492PBF 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
제품 속성
속성 값
제조사:
인피니언
제품 카테고리:
MOSFET
RoHS:
Y
기술:
장착 스타일:
SMD/SMT
패키지/케이스:
SO-8
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
200 V
Id - 연속 드레인 전류:
3.7 A
Rds On - 드레인 소스 저항:
79 mOhms
Vgs - 게이트 소스 전압:
20 V
Qg - 게이트 차지:
39 nC
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
2.5 W
구성:
하나의
채널 모드:
상승
포장:
튜브
키:
1.75 mm
길이:
4.9 mm
트랜지스터 유형:
1 N-Channel
유형:
HEXFET 전력 MOSFET
너비:
3.9 mm
상표:
인피니언 / IR
가을 시간:
14 ns
상품 유형:
MOSFET
상승 시간:
13 ns
공장 팩 수량:
95
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
27 ns
일반적인 켜기 지연 시간:
15 ns
부품 번호 별칭:
SP001554342
단위 무게:
0.019048 oz
Tags
IRF7492, IRF749, IRF74, IRF7, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 200V 3.7A 8-Pin SOIC
***ernational Rectifier
200V Single N-Channel HEXFET Power MOSFET in a SO-8 package
***trelec
MOSFET Operating temperature: -55...150 °C Housing type: SO-8 Polarity: N Power dissipation: 2.5 W
***ied Electronics & Automation
MOSFET, 200V, 3.7A, 79 MOHM, 39 NC QG, SO-8
***ment14 APAC
MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:3.7A; Drain Source Voltage Vds:200V; On Resistance Rds(on):79mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:3.7A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:30A; SMD Marking:F7492; Termination Type:SMD; Voltage Vds Typ:200V; Voltage Vgs Max:2.5V; Voltage Vgs Rds on Measurement:10V
부분 # 제조 설명 재고 가격
IRF7492PBF
DISTI # IRF7492PBF-ND
Infineon Technologies AGMOSFET N-CH 200V 3.7A 8-SOIC
RoHS: Compliant
Min Qty: 665
Container: Tube
Limited Supply - Call
    IRF7492PBF
    DISTI # 70018263
    Infineon Technologies AGMOSFET,200V,3.7A,79 MOHM,39 NC QG,SO-8
    RoHS: Compliant
    0
    • 665:$0.8650
    • 1330:$0.8470
    • 3325:$0.8210
    • 6650:$0.7870
    • 16625:$0.7350
    IRF7492PBFInternational Rectifier*** FREE SHIPPING ORDERS OVER $100 ***155
    • 46:$1.1025
    • 12:$1.3230
    • 1:$2.2050
    IRF7492PBFInternational Rectifier 58
      IRF7492PBF
      DISTI # 9264353
      Infineon Technologies AGMOSFET, N, SO-8
      RoHS: Compliant
      0
      • 1000:$0.8890
      • 500:$0.9520
      • 250:$1.0100
      • 100:$1.1300
      • 10:$1.4700
      • 1:$2.1300
      영상 부분 # 설명
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      신규 및 오리지널
      유효성
      재고:
      Available
      주문 시:
      1000
      수량 입력:
      IRF7492PBF의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
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