TK31J60W,S1VQ

Mfr. #:: TK31J60W,S1VQ
제조사:: Toshiba
설명:: MOSFET N-Ch 30.8A 230W FET 600V 3000pF 86nC
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: TK31J60W,S1VQ 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: TK31J60W,S1VQ Datasheet TK31J60W,S1VQ Datasheet (P4-P6)TK31J60W,S1VQ Datasheet (P7-P9)TK31J60W,S1VQ Datasheet (P10)
ECAD Model:
추가 정보:: TK31J60W,S1VQ 추가 정보

제품 속성
속성 값

제조사:: 도시바

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: 구멍을 통해

패키지/케이스:: TO-3PN-3

채널 수:: 1 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 600 V

Id - 연속 드레인 전류:: 30.8 A

Rds On - 드레인 소스 저항:: 88 mOhms

Vgs - 게이트 소스 전압:: 10 V

Qg - 게이트 차지:: 105 nC

Pd - 전력 손실:: 230 W

구성:: 하나의

상표명:: DTMOSIV

키:: 20 mm

길이:: 15.5 mm

시리즈:: TK31J60W

트랜지스터 유형:: 1 N-Channel

너비:: 4.5 mm

상표:: 도시바

상품 유형:: MOSFET

공장 팩 수량:: 25

하위 카테고리:: MOSFET

단위 무게:: 0.245577 oz

Tags: TK31J60W,S, TK31J, TK31, TK3

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

TK31J60W,S1VQ 설명

***ark: X35 Pb-F Power Mosfet Transistor To-3Pn(Os) Moq=50 Pd=230W F=1Mhz

***ical: Trans MOSFET N-CH Si 600V 30.8A 3-Pin(3+Tab) TO-3PN Bag/Tube

***et: DTMOSIV_600V_88MOHM MAX(VGS=10V)_TO-3P(N)

TK31J60W,S1VQ 추가 정보

Gen-4 Super Junction DTMOS MOSFETs: Toshiba Gen-4 Super-Junction DTMOSIV MOSFETs use the state-of-the-art single epitaxial process, DTMOSIV which provides a 30% reduction in RDS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. With a reduction in the RDS(on) it makes it possible to house lower RDS(on) chips in the same packages. This helps to improve the efficiency and reduce the size of power supplies. These devices are ideal for use with switching regulators.

Market price

부분 #	제조	설명	재고	가격
TK31J60W,S1VQ DISTI # V99:2348_13896269	Toshiba America Electronic Components	Trans MOSFET N-CH Si 600V 30.8A 3-Pin(3+Tab) TO-3PN Bag/Tube	25	2500:$4.3030 1000:$4.4470 500:$4.9850 250:$5.4040 100:$5.8070 25:$6.3230 10:$6.8150 1:$7.4270
TK31J60W,S1VQ DISTI # TK31J60WS1VQ-ND	Toshiba America Electronic Components	MOSFET N CH 600V 30.8A TO-3P(N) RoHS: Compliant Min Qty: 1 Container: Tube	23In Stock	500:$5.7629 100:$6.8783 25:$7.6220 1:$9.3000
TK31J60W,S1VQ DISTI # 30524811	Toshiba America Electronic Components	Trans MOSFET N-CH Si 600V 30.8A 3-Pin(3+Tab) TO-3PN Bag/Tube	25	25:$6.3120 10:$6.8030 2:$7.4120
TK31J60WS1VQ DISTI # TK31J60W,S1VQ	Toshiba America Electronic Components	Trans MOSFET N 600V 30.8A 3-Pin SC-65 Tube - Rail/Tube (Alt: TK31J60W,S1VQ) RoHS: Compliant Min Qty: 25 Container: Tube	Americas - 0	25:$5.1900 50:$4.8900 100:$4.6900 150:$4.3900 250:$4.2900
TK31J60W,S1VQ DISTI # 757-TK31J60WS1VQ	Toshiba America Electronic Components	MOSFET N-Ch 30.8A 230W FET 600V 3000pF 86nC RoHS: Compliant	23	1:$8.4500 10:$7.6100 25:$6.9300 100:$6.2600 250:$5.7500 500:$5.2400 1000:$4.5700
TK31J60WS1VQ(O	Toshiba America Electronic Components		50
TK31J60W,S1VQ(O) DISTI # C1S751201082507	Toshiba America Electronic Components	MOSFETs	55	50:$11.9000 10:$14.2000 5:$14.9000
TK31J60W,S1VQ DISTI # C1S751200875760	Toshiba America Electronic Components	MOSFETs RoHS: Compliant	25	25:$6.3120 10:$6.8030 1:$7.4120
TK31J60W,S1VQ	Toshiba America Electronic Components	MOSFET N-Ch 30.8A 230W FET 600V 3000pF 86nC RoHS: Compliant	Americas -
TK31J60WS1VQ	Toshiba America Electronic Components	MOSFET POWER MOSFET TRANSISTOR RoHS: Compliant	Americas -

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