SSM6N35AFE,LF

Mfr. #:: SSM6N35AFE,LF
제조사:: Toshiba
설명:: MOSFET LowON Res MOSFET ID=.25A VDSS=20V
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SSM6N35AFE,LF 데이터 시트
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HTML Datasheet:: SSM6N35AFE,LF Datasheet SSM6N35AFE,LF Datasheet (P4-P6)SSM6N35AFE,LF Datasheet (P7-P9)
ECAD Model:
추가 정보:: SSM6N35AFE,LF 추가 정보

제품 속성
속성 값

제조사:: 도시바

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: SOT-563-6

채널 수:: 2 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 20 V

Id - 연속 드레인 전류:: 250 mA

Rds On - 드레인 소스 저항:: 750 mOhms

Vgs th - 게이트 소스 임계 전압:: 350 mV

Vgs - 게이트 소스 전압:: 10 V

Qg - 게이트 차지:: 340 pC

최소 작동 온도:: -

최대 작동 온도:: + 150 C

Pd - 전력 손실:: 250 mW

구성:: 듀얼

채널 모드:: 상승

포장:: 릴

시리즈:: SSM6N35AFE

트랜지스터 유형:: 2 N-Channel

상표:: 도시바

순방향 트랜스컨덕턴스 - 최소:: 0.5 S

가을 시간:: 5.5 ns

상품 유형:: MOSFET

상승 시간:: 2 ns

공장 팩 수량:: 4000

하위 카테고리:: MOSFET

일반적인 끄기 지연 시간:: 6.5 ns

일반적인 켜기 지연 시간:: 2 ns

단위 무게:: 0.000106 oz

Tags: SSM6N35A, SSM6N35, SSM6N3, SSM6N, SSM6, SSM

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SSM6N35AFE,LF 설명

***roFlash: Small Low ON Resistance MOSFET N-Channel 20V 250mA 6-Pin SOT-563 T/R

***ical: Trans MOSFET N-CH Si 20V 0.25A 6-Pin ES T/R

***i-Key: MOSFET 2 N-CHANNEL 20V 250MA ES6

SSM6N35AFE,LF 추가 정보

SSM6 Low On-resistance MOSFET: Toshiba SSM6 Low On-resistance MOSFETs with high-speed switching operate as both power management switches and analog switches. These MOSFETs provide very low on-resistance as low as 1.1mΩ to a 115Ω maximum for different sets of gate to source voltage range. The SSM6 MOSFETs are available in small profile packages with surface mount compatibility. These MOSFETs offer a low drain to source on-resistance and operate as DC to DC converters. The SSM6 MOSFETs drive a 1.2V minimum to 4.5V maximum gate voltage. These MOSFETs deliver less drain power dissipation up to 150mW producing less heat. The SM66 MOSFETs operate at 12V to 100V input voltage range.

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