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IRG8P60N120KDPBF

IRG8P60N120KDPBF
Mfr. #:
IRG8P60N120KDPBF
제조사:
Infineon Technologies
설명:
IGBT Transistors 1200V IGBT GEN8
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IRG8P60N120KDPBF 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
제품 속성
속성 값
제조사
인피니언 테크놀로지스
제품 카테고리
IGBT - 싱글
시리즈
-
포장
튜브
장착 스타일
구멍을 통해
패키지 케이스
TO-247-3
입력 유형
기준
장착형
구멍을 통해
공급자-장치-패키지
TO-247AC
구성
하나의
파워맥스
420W
역복구-시간-trr
210ns
전류 수집기 Ic-Max
100A
Voltage-Collector-Emitter-Breakdown-Max
1200V
IGBT형
-
전류 수집기 펄스 Icm
120A
Vce-on-Max-Vge-Ic
2V @ 15V, 40A
스위칭 에너지
2.8mJ (on), 2.3mJ (off)
게이트 차지
345nC
Td-on-off-25°C
40ns/240ns
시험조건
600V, 40A, 5 Ohm, 15V
Pd 전력 손실
420 W
최대 작동 온도
+ 150 C
최소 작동 온도
- 40 C
컬렉터-이미터-전압-VCEO-최대
1200 V
컬렉터-이미터-포화-전압
1.7 V
연속 수집기 전류 at-25-C
100 A
게이트 이미 터 누설 전류
400 nA
최대 게이트 이미 터 전압
30 V
연속 수집기 전류 Ic-Max
60 A
Tags
IRG8P6, IRG8P, IRG8, IRG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 1200V 100A 420000mW 3-Pin(3+Tab) TO-247AC Tube
***p One Stop Global
Trans IGBT Chip N-CH 1.2KV 100A 3-Pin(3+Tab) TO-247AC Tube
***et Europe
Trans IGBT Chip N-CH 1.2KV 100A 3-Pin TO-247AC Tube
***i-Key
IGBT 1200V 60A TO-247AC
***Components
IGBT IRG8P60N120KDPBF
***ark
TUBE / G8, 1200V, 60A, COPAK-247AC
***et
G8, 1200V, 60A, COPAK-247AC
***ment14 APAC
Prices include import duty and tax. IGBT, SINGLE, 1.2KV, 100A, TO-247AC-3; DC Collector Current:100A; Collector Emitter Saturation Voltage Vce(on):1.7V; Power Dissipation Pd:420W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247AC; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 2 - 1 year; SVHC:No SVHC (27-Jun-2018)
***nell
IGBT, SINGOLO, 1.2KV, 100A, TO-247AC-3; Corrente di Collettore CC:100A; Tensione Saturaz Collettore-Emettitore Vce(on):1.7V; Dissipazione di Potenza Pd:420W; Tensione Collettore-Emettitore V(br)ceo:1.2kV; Modello Case Transistor:TO-247AC; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 2 - 1 anno; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
부분 # 제조 설명 재고 가격
IRG8P60N120KDPBF
DISTI # V99:2348_13892888		Infineon Technologies AGTrans IGBT Chip N-CH 1200V 100A 420000mW 3-Pin(3+Tab) TO-247AC Tube55
  • 100:$7.1140
  • 25:$8.2500
  • 10:$9.1430
  • 1:$10.2360
IRG8P60N120KDPBF
DISTI # IRG8P60N120KDPBF-ND		Infineon Technologies AGIGBT 1200V 100A 420W TO-247AC
RoHS: Compliant
Min Qty: 50
Container: Tube		Limited Supply - Call
    IRG8P60N120KDPBF
    DISTI # 26198457    		Infineon Technologies AGTrans IGBT Chip N-CH 1200V 100A 420000mW 3-Pin(3+Tab) TO-247AC Tube55
    • 25:$8.2500
    • 10:$9.1430
    • 2:$10.2360
    IRG8P60N120KDPBF
    DISTI # 91Y4785    		Infineon Technologies AGIGBT, SINGLE, 1.2KV, 100A, TO-247AC-3,DC Collector Current:100A,Collector Emitter Saturation Voltage Vce(on):1.7V,Power Dissipation Pd:420W,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case Style:TO-247AC,No. of , RoHS Compliant: Yes192
    • 1:$9.9300
    • 10:$8.9500
    • 25:$8.1400
    • 50:$7.5800
    • 100:$7.0700
    • 250:$5.9400
    • 500:$5.7500
    IRG8P60N120KDPBF
    DISTI # 942-IRG8P60N120KDPBF    		Infineon Technologies AGIGBT Transistors 1200V IGBT GEN8
    RoHS: Compliant    		0
      IRG8P60N120KDPBFInternational Rectifier 
      RoHS: Not Compliant      		75
      • 1000:$7.2800
      • 500:$7.6600
      • 100:$7.9800
      • 25:$8.3200
      • 1:$8.9600
      IRG8P60N120KDPBF
      DISTI # 2580047      		Infineon Technologies AGIGBT, SINGLE, 1.2KV, 100A, TO-247AC-3
      RoHS: Compliant      		192
      • 1:$14.4600
      • 10:$13.5200
      • 25:$11.9600
      IRG8P60N120KDPBF
      DISTI # 2580047      		Infineon Technologies AGIGBT, SINGLE, 1.2KV, 100A, TO-247AC-3
      RoHS: Compliant      		192
      • 1:£10.4700
      • 5:£9.3600
      • 10:£8.0800
      • 50:£7.5100
      • 100:£7.0000
      IRG8P60N120KDPBF
      DISTI # C1S322000499674      		Infineon Technologies AGIGBT Chip55
      • 25:$8.2500
      • 10:$9.1430
      • 1:$10.2360
      영상 부분 # 설명
      IRG8P60N120KDPBF

      Mfr.#: IRG8P60N120KDPBF

      OMO.#: OMO-IRG8P60N120KDPBF

      		 IGBT Transistors 1200V IGBT GEN8
      IRG8P60N120KDEPBF

      Mfr.#: IRG8P60N120KDEPBF

      OMO.#: OMO-IRG8P60N120KDEPBF-1190

      		 신규 및 오리지널
      IRG8P60N120KD-EPBF

      Mfr.#: IRG8P60N120KD-EPBF

      OMO.#: OMO-IRG8P60N120KD-EPBF-INFINEON-TECHNOLOGIES

      		 IGBT Transistors 1200V IGBT GEN8
      IRG8P60N120KDPBF

      Mfr.#: IRG8P60N120KDPBF

      OMO.#: OMO-IRG8P60N120KDPBF-INFINEON-TECHNOLOGIES

      		 IGBT Transistors 1200V IGBT GEN8
      IRG8P60N120KD

      Mfr.#: IRG8P60N120KD

      OMO.#: OMO-IRG8P60N120KD-1190

      		 신규 및 오리지널
      유효성
      재고:
      Available
      주문 시:
      1000
      수량 입력:
      IRG8P60N120KDPBF의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
      참고 가격(USD)
      수량
      단가
      내선 가격
      1
      US$8.27
      US$8.27
      10
      US$7.86
      US$78.60
      100
      US$7.45
      US$744.66
      500
      US$7.03
      US$3 516.45
      1000
      US$6.62
      US$6 619.20
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