IRFR1010ZPBF

IRFR1010ZPBF
Mfr. #:
IRFR1010ZPBF
제조사:
Infineon / IR
설명:
MOSFET 55V 1 N-CH HEXFET 7.5mOhms 63nC
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IRFR1010ZPBF 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFR1010ZPBF Datasheet
ECAD Model:
제품 속성
속성 값
제조사:
인피니언
제품 카테고리:
MOSFET
RoHS:
Y
기술:
장착 스타일:
SMD/SMT
패키지/케이스:
TO-252-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
55 V
Id - 연속 드레인 전류:
91 A
Rds On - 드레인 소스 저항:
7.5 mOhms
Vgs - 게이트 소스 전압:
20 V
Qg - 게이트 차지:
63 nC
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 175 C
Pd - 전력 손실:
140 W
구성:
하나의
채널 모드:
상승
포장:
튜브
키:
2.3 mm
길이:
6.5 mm
트랜지스터 유형:
1 N-Channel
유형:
자동차 MOSFET
너비:
6.22 mm
상표:
인피니언 / IR
가을 시간:
48 ns
상품 유형:
MOSFET
상승 시간:
76 ns
공장 팩 수량:
3000
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
42 ns
일반적인 켜기 지연 시간:
17 ns
부품 번호 별칭:
SP001578020
단위 무게:
0.139332 oz
Tags
IRFR1010, IRFR10, IRFR1, IRFR, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 5.8Milliohms;ID 42A;D-Pak (TO-252AA);-55deg
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
***ure Electronics
Single N-Channel 55 V 7.5 mOhm 63 nC HEXFET® Power Mosfet - DPAK
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:91A; Drain Source Voltage Vds:55V; On Resistance Rds(on):7.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:140W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:TO-252; Current Id Max:42A; Current Temperature:25°C; External Depth:10.5mm; External Length / Height:2.55mm; External Width:6.8mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:DPAK; Power Dissipation Pd:140W; Power Dissipation Pd:140W; Power Dissipation Ptot Max:140W; Pulse Current Idm:360A; SMD Marking:IRFR1010ZPBF; Termination Type:SMD; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
부분 # 제조 설명 재고 가격
IRFR1010ZPBF
DISTI # IRFR1010ZPBF-ND
Infineon Technologies AGMOSFET N-CH 55V 42A DPAK
RoHS: Compliant
Min Qty: 1
Container: Tube
Limited Supply - Call
    IRFR1010ZPBF
    DISTI # IRFR1010ZPBF
    Infineon Technologies AGTrans MOSFET N-CH 55V 91A 3-Pin(2+Tab) DPAK - Rail/Tube (Alt: IRFR1010ZPBF)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tube
    Americas - 100
      IRFR1010ZPBF
      DISTI # 31K1960
      Infineon Technologies AGN CHANNEL MOSFET, 55V, 42A, D-PAK,Transistor Polarity:N Channel,Continuous Drain Current Id:42A,Drain Source Voltage Vds:55V,On Resistance Rds(on):0.0058ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Product Range:-RoHS Compliant: Yes0
      • 1:$1.5100
      • 10:$1.2900
      • 100:$0.9840
      • 500:$0.8700
      • 1000:$0.6870
      • 5000:$0.6090
      IRFR1010ZPBF.
      DISTI # 29AC7057
      Infineon Technologies AGN CHANNEL MOSFET, 55V, 42A, D-PAK,Transistor Polarity:N Channel,Continuous Drain Current Id:42A,Drain Source Voltage Vds:55V,On Resistance Rds(on):0.0058ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Product Range:-RoHS Compliant: Yes0
        IRFR1010ZPBF
        DISTI # 70017236
        Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 55V,RDS(ON) 5.8 Milliohms,ID 42A,D-Pak (TO-252AA),-55deg
        RoHS: Compliant
        0
        • 1:$2.2100
        • 1200:$1.9500
        IRFR1010ZPBF
        DISTI # 942-IRFR1010ZPBF
        Infineon Technologies AGMOSFET 55V 1 N-CH HEXFET 7.5mOhms 63nC
        RoHS: Compliant
        828
        • 1:$1.5100
        • 10:$1.2900
        • 100:$0.9840
        • 500:$0.8700
        • 1000:$0.6870
        IRFR1010ZPBF
        DISTI # 8655825P
        Infineon Technologies AGMOSFET N-CH 55V 91A HEXFET DPAK, TU20
        • 100:£0.7120
        • 250:£0.6700
        • 500:£0.6300
        • 1050:£0.4980
        IRFR1010ZPBF
        DISTI # IRFR1010ZPBF
        Infineon Technologies AGTransistor: N-MOSFET,unipolar,55V,91A,140W,DPAK150
        • 1:$1.2900
        • 3:$1.1700
        • 10:$0.9600
        • 75:$0.8300
        IRFR1010ZPBF
        DISTI # IRFR1010ZPBF
        Infineon Technologies AGN-Ch 55V 42A 140W 0,0075R TO252AA
        RoHS: Compliant
        250
        • 75:€0.6730
        • 150:€0.5730
        • 300:€0.5230
        • 600:€0.5035
        IRFR1010ZTRPBF
        DISTI # IRFR1010ZPBF-GURT
        Infineon Technologies AGN-Ch 55V 42A 140W 0,0075R TO252AA
        RoHS: Compliant
        0
        • 50:€0.6265
        • 100:€0.5665
        • 500:€0.5365
        • 3000:€0.5165
        IRFR1010ZPBF
        DISTI # 1013382
        Infineon Technologies AGMOSFET, N, D-PAK
        RoHS: Compliant
        0
        • 1:$2.4000
        • 10:$2.0400
        • 100:$1.5600
        • 500:$1.3800
        • 1000:$1.1000
        • 3000:$0.9930
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        유효성
        재고:
        Available
        주문 시:
        1984
        수량 입력:
        IRFR1010ZPBF의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
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