SI4501BDY-T1-GE3

Mfr. #:: SI4501BDY-T1-GE3
제조사:: Vishay
설명:: MOSFET N/P-CH 30V/8V 8SOIC
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SI4501BDY-T1-GE3 데이터 시트
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ECAD Model:

제품 속성
속성 값

제조사: 비쉐이 실리콘

제품 카테고리: FET - 어레이

시리즈: 트렌치FETR

포장: Digi-ReelR 대체 패키징

부분 별칭: SI4501BDY-GE3

단위 무게: 0.019048 oz

장착 스타일: SMD/SMT

패키지 케이스: 8-SOIC (0.154", 3.90mm Width)

기술: 시

작동 온도: -55°C ~ 150°C (TJ)

장착형: 표면 실장

채널 수: 2 Channel

공급자-장치-패키지: 8-SOIC

구성: N-채널 P-채널

FET형: N 및 P-채널, 공통 드레인

파워맥스: 4.5W, 3.1W

트랜지스터형: 1 N-Channel 1 P-Channel

드레인-소스 전압 Vdss: 30V, 8V

입력-커패시턴스-Ciss-Vds: 805pF @ 15V

FET 기능: 로직 레벨 게이트

Current-Continuous-Drain-Id-25°C: 12A, 8A

Rds-On-Max-Id-Vgs: 17 mOhm @ 10A, 10V

Vgs-th-Max-Id: 2V @ 250μA

Gate-Charge-Qg-Vgs: 25nC @ 10V

Pd 전력 손실: 4.5 W

가을철: 8 ns 9 ns

상승 시간: 11 ns 12 ns

Vgs 게이트 소스 전압: 20 V 8 V

Id-연속-드레인-전류: 12 A

Vds-드레인-소스-고장-전압: 30 V - 8 V

Rds-On-Drain-Source-Resistance: 13.5 mOhms 21 mOhms

트랜지스터 극성: N-채널 P-채널

일반 꺼짐 지연 시간: 15 ns 35 ns

일반 켜기 지연 시간: 7 ns 6 ns

Qg-Gate-Charge: 16.5 nC 27.5 nC

순방향 트랜스컨덕턴스-최소: 29 S 24 S

Tags: SI4501B, SI4501, SI450, SI45, SI4

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

Market price

부분 #	제조	설명	재고	가격
SI4501BDY-T1-GE3 DISTI # V72:2272_09216524	Vishay Intertechnologies	Trans MOSFET N/P-CH 30V/8V 9A/6.4A 8-Pin SOIC N T/R RoHS: Compliant	2262	1000:$0.2460 500:$0.2753 250:$0.3234 100:$0.3345 25:$0.4116 10:$0.4133 1:$0.4862
SI4501BDY-T1-GE3 DISTI # SI4501BDY-T1-GE3CT-ND	Vishay Siliconix	MOSFET N/P-CH 30V/8V 8SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1756In Stock	1000:$0.2900 500:$0.3626 100:$0.4895 10:$0.6340 1:$0.7300
SI4501BDY-T1-GE3 DISTI # SI4501BDY-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N/P-CH 30V/8V 8SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1756In Stock	1000:$0.2900 500:$0.3626 100:$0.4895 10:$0.6340 1:$0.7300
SI4501BDY-T1-GE3 DISTI # SI4501BDY-T1-GE3TR-ND	Vishay Siliconix	MOSFET N/P-CH 30V/8V 8SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	On Order	2500:$0.2552
SI4501BDY-T1-GE3 DISTI # 30697489	Vishay Intertechnologies	Trans MOSFET N/P-CH 30V/8V 9A/6.4A 8-Pin SOIC N T/R RoHS: Compliant	2262	1000:$0.2460 500:$0.2753 250:$0.3234 100:$0.3345 29:$0.4116
SI4501BDY-T1-GE3 DISTI # SI4501BDY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N/P-CH 30V/8V 12A/8A 8-Pin SO T/R (Alt: SI4501BDY-T1-GE3) RoHS: Compliant Min Qty: 1 Container: Tape and Reel	Europe - 0	1:€0.4119 10:€0.2809 25:€0.2419 50:€0.2229 100:€0.2149 500:€0.2109 1000:€0.2079
SI4501BDY-T1-GE3 DISTI # SI4501BDY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N/P-CH 30V/8V 12A/8A 8-Pin SO T/R - Tape and Reel (Alt: SI4501BDY-T1-GE3) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.2319 5000:$0.2249 10000:$0.2159 15000:$0.2099 25000:$0.2049
SI4501BDY-T1-GE3 DISTI # 67X6866	Vishay Intertechnologies	MOSFET Transistor, N and P Channel, 12 A, 30 V, 0.0135 ohm, 10 V, 800 mV	0	1:$0.2760 2500:$0.2630 5000:$0.2450 7500:$0.2280
SI4501BDY-T1-GE3 DISTI # 70616179	Vishay Siliconix	SI4501BDY-T1-GE3 Dual N/P-channel MOSFET Transistor,6.4 A,12 A,8V,30V,8-Pin SOIC RoHS: Compliant	0	100:$0.4700 500:$0.4200 1500:$0.3700 2500:$0.3400
SI4501BDY-T1-GE3 DISTI # 78-SI4501BDY-T1-GE3	Vishay Intertechnologies	MOSFET -8V Vds 8V Vgs SO-8 N&P PAIR RoHS: Compliant	1545	1:$0.6400 10:$0.5110 100:$0.3880 500:$0.3200 1000:$0.2680 2500:$0.2670
SI4501BDY-T1-GE3 DISTI # 8123227P	Vishay Intertechnologies	TRANS MOSFET N/P-CH 30V/8V 9A/6.4A, RL	1680	100:£0.3060 500:£0.2520 1500:£0.2140 2500:£0.2090
SI4501BDY-T1-GE3	Vishay Intertechnologies	MOSFET -8V Vds 8V Vgs SO-8 N&P PAIR	Americas -
SI4501BDY-T1-GE3 DISTI # C1S803605378402	Vishay Intertechnologies	MOSFETs	2262	250:$0.3234 100:$0.3345 25:$0.4116 10:$0.4134
SI4501BDY-T1-GE3 DISTI # 2056722	Vishay Intertechnologies	MOSFET, NP CH, W/D, 30V/8V, SO8 RoHS: Compliant	0	5:£0.4470 25:£0.3870 100:£0.3270 250:£0.2980 500:£0.2690

영상	부분 #	설명
	Mfr.#: SI4501BDY-T1-GE3 OMO.#: OMO-SI4501BDY-T1-GE3	MOSFET -8V Vds 8V Vgs SO-8 N&P PAIR
	Mfr.#: SI4501BDY OMO.#: OMO-SI4501BDY-1190	신규 및 오리지널
	Mfr.#: SI4501BDY-T1-E3 OMO.#: OMO-SI4501BDY-T1-E3-1190	신규 및 오리지널
	Mfr.#: SI4501BDY-T1-GE3 OMO.#: OMO-SI4501BDY-T1-GE3-VISHAY	MOSFET N/P-CH 30V/8V 8SOIC

SI4501BDY-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes