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RGT8BM65DTL

RGT8BM65DTL
Mfr. #:
RGT8BM65DTL
제조사:
Rohm Semiconductor
설명:
IGBT Transistors 650V 4A IGBT Stop Trench
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
RGT8BM65DTL 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
RGT8BM65DTL 추가 정보
제품 속성
속성 값
제조사:
로옴 반도체
제품 카테고리:
IGBT 트랜지스터
RoHS:
Y
기술:
시
패키지/케이스:
TO-252-3
장착 스타일:
SMD/SMT
컬렉터-이미터 전압 VCEO 최대:
650 V
수집기-이미터 포화 전압:
1.65 V
최대 게이트 이미터 전압:
30 V
25C에서 연속 수집기 전류:
8 A
Pd - 전력 손실:
62 W
최소 작동 온도:
- 40 C
최대 작동 온도:
+ 175 C
시리즈:
RGT8BM65D
포장:
릴
연속 수집가 현재 IC 최대:
8 A
작동 온도 범위:
- 40 C to + 175 C
상표:
로옴 반도체
지속적인 수집가 전류:
4 A
게이트-이미터 누설 전류:
+/- 200 nA
상품 유형:
IGBT 트랜지스터
공장 팩 수량:
2500
하위 카테고리:
IGBT
부품 번호 별칭:
RGT8BM65D
단위 무게:
0.139332 oz
Tags
RGT8, RGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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RGT8BM65D Series 650 V 8 A 62 W Field Stop Trench IGBT - TO-252-3
***i-Key
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***nell
IGBT, SINGLE, 650V, 8A, TO-252-3; DC Collector Current: 8A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 62W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
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***inecomponents.com
POWER IGBT UFS 3A 600V TF=275NS MAX TO-252 TAPE AND REEL
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IGBTs 6a, 600V N-Ch IGBT UFS Series
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6 A 600 V N-CHANNEL IGBT TO-252AA
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IGBT, N-Channel, 600V, 8.5A, D-Pak TO-252AA | Infineon IRG4RC10KDTRPBF
***nell
IGBT, COPAK, D-PAK; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:9A; Voltage, Vce Sat Max:2.39V; Power Dissipation:38W; Case Style:D-PAK; Termination Type:SMD; Alternate Case Style:TO-252; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:18A; Power, Pd:38W; Time, Rise:24ns
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Tape & Reel (TR) Surface Mount ROHS3Compliant IGBT Transistor 2.6V @ 15V 5A 8.5A 38W 28ns
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600V ULTRAFAST 8-60 KHZ COPACK IGBT IN A D-PAK PACKAGE | Infineon IRG4RC10UDPBF
***nell
IGBT, D-PAK; DC Collector Current: 8.5A; Collector Emitter Saturation Voltage Vce(on): 2.6V; Power Dissipation Pd: 38W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Ic Continuous a Max: 5A; Current Temperature: 25°C; Full Power Rating Temperature: 25°C; No. of Transistors: 1; Operating Temperature Min: -55°C; Power Dissipation Max: 38W; Pulsed Current Icm: 34A; Rise Time: 16ns; Termination Type: Surface Mount Device; Transistor Polarity: N Channel; Transistor Type: IGBT; Voltage Vces: 600V
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IGBTs Insulated Gate Bipolar Transistor N-Ch 600 Volt 3 Amp
Field Stop Trench IGBTs
ROHM Field Stop Trench IGBTs are energy saving high-efficiency IGBTs used in a wide range of high-voltage and high-current applications. These IGBTs feature a low collector and emitter saturation voltage, short-circuit withstand time, and built-in very fast & soft recovery FRD. The field stop trench IGBTs are ideal for UPS, power conditioner, welder, and general inverters for industrial use.
부분 # 제조 설명 재고 가격
RGT8BM65DTL
DISTI # RGT8BM65DTLTR-ND		ROHM SemiconductorIGBT 650V 8A 62W TO-252
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2500:$0.8680
RGT8BM65DTL
DISTI # RGT8BM65DTLCT-ND		ROHM SemiconductorIGBT 650V 8A 62W TO-252
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.9260
  • 500:$1.1176
  • 250:$1.2772
  • 100:$1.3602
  • 25:$1.5964
  • 10:$1.6920
  • 1:$1.8800
RGT8BM65DTL
DISTI # RGT8BM65DTLDKR-ND		ROHM SemiconductorIGBT 650V 8A 62W TO-252
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.9260
  • 500:$1.1176
  • 250:$1.2772
  • 100:$1.3602
  • 25:$1.5964
  • 10:$1.6920
  • 1:$1.8800
RGT8BM65DTL
DISTI # RGT8BM65DTL		ROHM SemiconductorTrans IGBT Chip N-CH 650V 8A 3-Pin TO-252 T/R (Alt: RGT8BM65DTL)
RoHS: Compliant
Min Qty: 1
Container: Tape and Reel		Europe - 0
  • 1000:€0.4779
  • 500:€0.5149
  • 100:€0.5579
  • 50:€0.6079
  • 25:€0.6689
  • 10:€0.7439
  • 1:€0.8369
RGT8BM65DTL
DISTI # RGT8BM65DTL		ROHM SemiconductorTrans IGBT Chip N-CH 650V 8A 3-Pin TO-252 T/R - Tape and Reel (Alt: RGT8BM65DTL)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 25000:$0.4479
  • 15000:$0.4599
  • 10000:$0.4869
  • 5000:$0.5169
  • 2500:$0.5519
RGT8BM65DTL
DISTI # 755-RGT8BM65DTL		ROHM SemiconductorIGBT Transistors 650V 4A IGBT Stop Trench
RoHS: Compliant		1400
  • 1:$1.8300
  • 10:$1.5500
  • 100:$1.2400
  • 500:$1.0900
  • 1000:$0.8990
  • 2500:$0.8380
  • 5000:$0.8070
  • 10000:$0.7750
RGT8BM65DTL
DISTI # 2519785		ROHM SemiconductorIGBT, SINGLE, 650V, 8A, TO-252-3
RoHS: Compliant		0
  • 1000:$1.4100
  • 500:$1.7000
  • 250:$1.9400
  • 100:$2.0700
  • 25:$2.4300
  • 10:$2.5800
  • 1:$2.8500
RGT8BM65DTL
DISTI # IGBT1479		ROHM SemiconductorIGBT650V8A30VDPack
RoHS: Compliant		Stock DE - 0Stock HK - 0Stock US - 0
  • 2500:$0.7175
  • 5000:$0.6733
  • 7500:$0.6513
RGT8BM65DTLROHM Semiconductor 2500
  • 1:¥14.2929
  • 100:¥8.1041
  • 1250:¥5.1380
  • 2500:¥3.8278
RGT8BM65DTLROHM SemiconductorIGBT Transistors 650V 4A IGBT Stop Trench
RoHS: Compliant		Americas -
    영상 부분 # 설명
    RGT8BM65DTL

    Mfr.#: RGT8BM65DTL

    OMO.#: OMO-RGT8BM65DTL

    		 IGBT Transistors 650V 4A IGBT Stop Trench
    RGT8BM65DTL

    Mfr.#: RGT8BM65DTL

    OMO.#: OMO-RGT8BM65DTL-ROHM-SEMI

    		 IGBT Transistors 650V 4A Field Stop Trench IGBT
    RGT8BM65D

    Mfr.#: RGT8BM65D

    OMO.#: OMO-RGT8BM65D-1190

    		 Insulated Gate Bipolar Transistor, 8A I(C), 650V V(BR)CES, N-Channel, TO-252
    유효성
    재고:
    Available
    주문 시:
    1984
    수량 입력:
    RGT8BM65DTL의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$1.83
    US$1.83
    10
    US$1.55
    US$15.50
    100
    US$1.24
    US$124.00
    500
    US$1.09
    US$545.00
    1000
    US$0.90
    US$899.00
    2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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