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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| FGA50N100BNTD2 DISTI # V36:1790_06359076 | ON Semiconductor | 1000V, 50A NPT-TRENCH IGBT CO- | 0 |
|
| FGA50N100BNTD2 DISTI # FGA50N100BNTD2-ND | ON Semiconductor | IGBT 1000V 50A 156W TO3P Min Qty: 1 Container: Tube | 22In Stock |
|
| FGA50N100BNTD2 DISTI # FGA50N100BNTD2 | ON Semiconductor | Trans IGBT Chip N-CH 1KV 50A 3-Pin(3+Tab) TO-3P(N) Rail - Rail/Tube (Alt: FGA50N100BNTD2) RoHS: Compliant Min Qty: 450 Container: Tube | Americas - 0 |
|
| FGA50N100BNTD2 DISTI # FGA50N100BNTD2 | ON Semiconductor | Trans IGBT Chip N-CH 1KV 50A 3-Pin(3+Tab) TO-3P(N) Rail (Alt: FGA50N100BNTD2) Min Qty: 1 | Europe - 0 |
|
| FGA50N100BNTD2 DISTI # 57AC1889 | ON Semiconductor | IGBT, SINGLE, 1KV, 50A, TO-3P,DC Collector Current:50A,Collector Emitter Saturation Voltage Vce(on):2.5V,Power Dissipation Pd:156W,Collector Emitter Voltage V(br)ceo:1kV,Transistor Case Style:TO-3P,No. of Pins:3Pins,Operating RoHS Compliant: Yes RoHS: Compliant | 394 |
|
| FGA50N100BNTD2 DISTI # 512-FGA50N100BNTD2 | ON Semiconductor | IGBT Transistors N-ch / 50A 1000V RoHS: Compliant | 370 |
|
| FGA50N100BNTD2 DISTI # 2860233 | ON Semiconductor | IGBT, SINGLE, 1KV, 50A, TO-3P RoHS: Compliant | 400 |
|
| FGA50N100BNTD2 DISTI # 2860233 | ON Semiconductor | IGBT, SINGLE, 1KV, 50A, TO-3P RoHS: Compliant | 396 |
|
| 영상 | 부분 # | 설명 |
|---|---|---|
|
Mfr.#: FGA50N100BNTD2 OMO.#: OMO-FGA50N100BNTD2 |
IGBT Transistors N-ch / 50A 1000V |
|
Mfr.#: FGA50S110P OMO.#: OMO-FGA50S110P |
IGBT Transistors 1100 V, 50 A Shorted-anode IGBT |
|
Mfr.#: FGA50N100BNT OMO.#: OMO-FGA50N100BNT-1190 |
신규 및 오리지널 |
|
|
Mfr.#: FGA50N100BNTD OMO.#: OMO-FGA50N100BNTD-1190 |
신규 및 오리지널 |
|
|
Mfr.#: FGA50N100BNTD2,FGA50N100 |
신규 및 오리지널 |
|
|
Mfr.#: FGA50N100BNTDTU(SBXD001) |
신규 및 오리지널 |
|
Mfr.#: FGA50N100BNTTU |
IGBT 1000V 50A 156W TO3P |
|
|
Mfr.#: FGA50N120 OMO.#: OMO-FGA50N120-1190 |
신규 및 오리지널 |
|
|
Mfr.#: FGA50N60LS |
IGBT 600V 100A 240W TO3P |
|
|
Mfr.#: FGA50N60UFD OMO.#: OMO-FGA50N60UFD-1190 |
신규 및 오리지널 |