CSD87312Q3E

Mfr. #:: CSD87312Q3E
설명:: MOSFET 2N-CH 30V 27A 8VSON
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: CSD87312Q3E 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:: CSD87312Q3E 추가 정보 CSD87312Q3E Product Details

제품 속성
속성 값

제조사: 텍사스 인스트루먼트

제품 카테고리: FET - 어레이

시리즈: 넥스펫

포장: Digi-ReelR 대체 패키징

장착 스타일: SMD/SMT

상표명: 넥스펫

패키지 케이스: 8-PowerTDFN

기술: 시

작동 온도: -55°C ~ 150°C (TJ)

장착형: 표면 실장

채널 수: 2 Channel

공급자-장치-패키지: 8-VSON (5x6)

구성: 이중 공통 소스

FET형: 2 N-Channel (Dual) Common Source

파워맥스: 2.5W

트랜지스터형: 2 N-Channel

드레인-소스 전압 Vdss: 30V

입력-커패시턴스-Ciss-Vds: 1250pF @ 15V

FET 기능: 로직 레벨 게이트

Current-Continuous-Drain-Id-25°C: 27A

Rds-On-Max-Id-Vgs: 33 mOhm @ 7A , 8V

Vgs-th-Max-Id: 1.3V @ 250μA

Gate-Charge-Qg-Vgs: 8.2nC @ 4.5V

Pd 전력 손실: 2.5 W

최대 작동 온도: + 150 C

최소 작동 온도: - 55 C

가을철: 2.8 ns

상승 시간: 16 ns

Vgs 게이트 소스 전압: 10 V

Id-연속-드레인-전류: 27 A

Vds-드레인-소스-고장-전압: 30 V

Vgs-th-Gate-Source-Threshold-Voltage: 1 V

Rds-On-Drain-Source-Resistance: 38 mOhms

트랜지스터 극성: N-채널

일반 꺼짐 지연 시간: 17 ns

일반 켜기 지연 시간: 7.8 ns

Qg-Gate-Charge: 6.3 nC

순방향 트랜스컨덕턴스-최소: 39 S

Tags: CSD8731, CSD873, CSD87, CSD8, CSD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CSD87312Q3E 설명

***as Instruments: 30V, N ch NexFET MOSFET™, dual common source SON3x3, 38mOhm 8-VSON-CLIP -55 to 150

***p One Stop Global: Trans MOSFET N-CH 30V 27A 8-Pin VSON EP T/R

***Components: MOSFET Dual N-Ch 30V 27A NexFET VSON8EP

***ark: 30V Powerblock N ch MOSFET

***i-Key: MOSFET 2N-CH 30V 27A 8VSON

***ical: High Frequency Synchronous Power Module

CSD87312Q3E 추가 정보

NexFET N-Channel Power MOSFETs: OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.

TI N-Channel 8-23-12

NexFET™ Power MOSFETs: OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Market price

부분 #	설명	재고	가격
CSD87312Q3E DISTI # 296-35526-1-ND	MOSFET 2N-CH 30V 27A 8VSON RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2270In Stock	1000:$0.5234 500:$0.6630 100:$0.8550 10:$1.0820 1:$1.2200
CSD87312Q3E DISTI # 296-35526-6-ND	MOSFET 2N-CH 30V 27A 8VSON RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2270In Stock	1000:$0.5234 500:$0.6630 100:$0.8550 10:$1.0820 1:$1.2200
CSD87312Q3E DISTI # 296-35526-2-ND	MOSFET 2N-CH 30V 27A 8VSON RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	On Order	5000:$0.4506 2500:$0.4743
CSD87312Q3E DISTI # CSD87312Q3E	Trans MOSFET N-CH 30V 27A 8-Pin VSON EP T/R (Alt: CSD87312Q3E) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0
CSD87312Q3E DISTI # CSD87312Q3E	Trans MOSFET N-CH 30V 27A 8-Pin VSON EP T/R - Tape and Reel (Alt: CSD87312Q3E) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.4469 5000:$0.4249 10000:$0.4109 15000:$0.3969 25000:$0.3859
CSD87312Q3E	Dual 30-V N-Channel NexFET Power MOSFETs	7050	1000:$0.3500 750:$0.3900 500:$0.4900 250:$0.6000 100:$0.6500 25:$0.7600 10:$0.8200 1:$0.9200
CSD87312Q3E DISTI # 595-CSD87312Q3E	MOSFET Dual 30V N-CH NexFET Pwr MOSFETs RoHS: Compliant	737	1:$1.0100 10:$0.8600 100:$0.6630 500:$0.5860 1000:$0.4620 2500:$0.4100
CSD87312Q3E	Power Field-Effect Transistor, 27A I(D), 30V, 0.038ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	7560	1000:$0.4100 500:$0.4300 100:$0.4500 25:$0.4700 1:$0.5000

관련 상품

영상	부분 #	설명
	Mfr.#: CSD87502Q2 OMO.#: OMO-CSD87502Q2	MOSFET 30V, N ch NexFET MOSFETG , dual SON2x2, 42mOhm 6-WSON -55 to 150
	Mfr.#: CSD87381PT OMO.#: OMO-CSD87381PT	MOSFET Sync Buck NexFET Pwr Block II
	Mfr.#: CSD87381PEVM-603 OMO.#: OMO-CSD87381PEVM-603	Power Management IC Development Tools CSD87381P EVAL MOD
	Mfr.#: CSD87353Q5D-1 OMO.#: OMO-CSD87353Q5D-1-TEXAS-INSTRUMENTS	신규 및 오리지널
	Mfr.#: CSD87353Q5D. OMO.#: OMO-CSD87353Q5D--TEXAS-INSTRUMENTS	신규 및 오리지널
	Mfr.#: CSD87313DMST OMO.#: OMO-CSD87313DMST-TEXAS-INSTRUMENTS	MOSFET 2 N-CHANNEL 30V 8WSON
	Mfr.#: CSD87503Q3ET OMO.#: OMO-CSD87503Q3ET-TEXAS-INSTRUMENTS	30-V DUAL N-CHANNEL MOSFET, COMM
	Mfr.#: CSD87312Q3E OMO.#: OMO-CSD87312Q3E-TEXAS-INSTRUMENTS	MOSFET 2N-CH 30V 27A 8VSON
	Mfr.#: CSD87335Q3D OMO.#: OMO-CSD87335Q3D-TEXAS-INSTRUMENTS	MOSFET N-CH 30V POWERBLOCK
	Mfr.#: CSD87381PEVM-603 OMO.#: OMO-CSD87381PEVM-603-TEXAS-INSTRUMENTS	CSD87381 EVALUATION BOARD

유효성

재고:: Available
주문 시:: 3000
수량 입력:

CSD87312Q3E의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

참고 가격(USD)

수량
단가
내선 가격

1: ~~US$0.52~~; ~~US$0.52~~

10: ~~US$0.50~~; ~~US$4.99~~

100: ~~US$0.47~~; ~~US$47.25~~

500: ~~US$0.45~~; ~~US$223.15~~

1000: ~~US$0.42~~; ~~US$420.00~~

시작

CSD8731 3
CSD873 36
CSD87 45
CSD8 80
CSD 800

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CSD87312Q3E

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes