OMO ElectronicOMO Electronic
Expand menu
안녕하세요, 로그인내 계정
0 카트

SIHB12N60E-GE3

SIHB12N60E-GE3
Mfr. #:
SIHB12N60E-GE3
제조사:
Vishay / Siliconix
설명:
MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
SIHB12N60E-GE3 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHB12N60E-GE3 DatasheetSIHB12N60E-GE3 Datasheet (P4-P6)SIHB12N60E-GE3 Datasheet (P7-P9)
ECAD Model:
추가 정보:
SIHB12N60E-GE3 추가 정보
제품 속성
속성 값
제조사:
비쉐이
제품 카테고리:
MOSFET
RoHS:
Y
기술:
시
장착 스타일:
SMD/SMT
패키지/케이스:
TO-263-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
650 V
Id - 연속 드레인 전류:
12 A
Rds On - 드레인 소스 저항:
380 mOhms
Vgs th - 게이트 소스 임계 전압:
4 V
Vgs - 게이트 소스 전압:
30 V
Qg - 게이트 차지:
29 nC
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
147 W
구성:
하나의
채널 모드:
상승
포장:
튜브
시리즈:
E
상표:
비쉐이 / 실리콘닉스
가을 시간:
19 ns
상품 유형:
MOSFET
상승 시간:
19 ns
공장 팩 수량:
1000
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
35 ns
일반적인 켜기 지연 시간:
14 ns
단위 무게:
0.050717 oz
Tags
SIHB12N60, SIHB12N6, SIHB12N, SIHB12, SIHB1, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    E**y
    E**y
    TR

    Tanks

    2019-01-22
    A***v
    A***v
    RU

    Everything has come safe and sound

    2019-01-22
***et
Trans MOSFET N-CH 600V 12A 3-Pin(2+Tab) D2PAK
***ure Electronics
MOSFET 600V 380MOHM@10V 12A N-CH E-SRS
***ment14 APAC
MOSFET, N CH, 600V, 12A, TO-263-3
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
부분 # 제조 설명 재고 가격
SIHB12N60E-GE3
DISTI # V36:1790_09219014		Vishay IntertechnologiesTrans MOSFET N-CH 600V 12A 3-Pin(2+Tab) D2PAK0
  • 1000000:$0.9136
  • 500000:$0.9150
  • 100000:$0.9941
  • 10000:$1.1110
  • 1000:$1.1300
SIHB12N60E-GE3
DISTI # V99:2348_09219014		Vishay IntertechnologiesTrans MOSFET N-CH 600V 12A 3-Pin(2+Tab) D2PAK0
  • 1000000:$0.9821
  • 500000:$0.9833
  • 100000:$1.0390
  • 10000:$1.1180
  • 1000:$1.1300
SIHB12N60E-GE3
DISTI # SIHB12N60E-GE3-ND		Vishay SiliconixMOSFET N-CH 600V 12A TO263
Min Qty: 1
Container: Bulk		146In Stock
  • 5000:$0.8911
  • 2500:$0.9045
  • 1000:$0.9715
  • 500:$1.1725
  • 100:$1.4271
  • 10:$1.7760
  • 1:$1.9800
SIHB12N60E-GE3
DISTI # SIHB12N60E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 12A 3-Pin(2+Tab) D2PAK - Tape and Reel (Alt: SIHB12N60E-GE3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 10000:$0.8590
  • 6000:$0.8827
  • 4000:$0.9079
  • 2000:$0.9463
  • 1000:$0.9753
SIHB12N60E-GE3
DISTI # 68W7031		Vishay IntertechnologiesTrans MOSFET N-CH 600V 12A 3-Pin(2+Tab) D2PAK - Product that comes on tape, but is not reeled (Alt: 68W7031)
RoHS: Not Compliant
Min Qty: 1
Container: Ammo Pack		Americas - 0
  • 1:$1.1800
SIHB12N60E-GE3
DISTI # 68W7031		Vishay IntertechnologiesMOSFET, N CHANNEL, 600V, 12A, TO-263-3,Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.32ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V RoHS Compliant: Yes
RoHS: Compliant		322
  • 100:$1.0300
  • 250:$1.0300
  • 500:$1.0300
  • 25:$1.1200
  • 50:$1.1200
  • 1:$1.2200
  • 10:$1.2200
SIHB12N60E-GE3
DISTI # 68W7032		Vishay IntertechnologiesMOSFET, N CH, 600V, 12A, TO-263-3, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.32ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V RoHS Compliant: Yes
RoHS: Compliant		0
  • 10000:$0.8380
  • 6000:$0.8710
  • 4000:$0.9050
  • 2000:$1.0100
  • 1000:$1.0600
  • 1:$1.1300
SIHB12N60E-GE3
DISTI # 78-SIHB12N60E-GE3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant		840
  • 1:$1.9800
  • 10:$1.7400
  • 100:$1.3700
  • 500:$1.1700
  • 1000:$0.9710
  • 2000:$0.9040
  • 5000:$0.8910
SIHB12N60E-GE3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant		Americas -
    SIHB12N60E-GE3
    DISTI # 1451818    		Vishay IntertechnologiesIn a Tube of 50, SIHB12N60E-GE3 N-Channel MOSFET, 12 A, 600 V E Series, 3-Pin D2PAK Vishay, TU
    Min Qty: 50
    Container: Tube    		0
    • 50:$0.6980
    SIHB12N60E-GE3
    DISTI # 7689300    		Vishay IntertechnologiesSIHB12N60E-GE3 N-Channel MOSFET, 12 A, 600 V E Series, 3-Pin D2PAK Vishay, EA
    Min Qty: 1
    Container: Bulk    		671
    • 1:$0.7150
    SIHB12N60EGE3Vishay IntertechnologiesPower Field-Effect Transistor, 12A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RoHS: Compliant    		Europe - 900
      SIHB12N60E-GE3
      DISTI # 2364071      		Vishay IntertechnologiesMOSFET, N-CH, 600V, 12A, TO-263
      RoHS: Compliant      		1165
      • 5000:£0.7190
      • 1000:£0.7450
      • 500:£0.9630
      • 250:£1.0300
      • 100:£1.1000
      • 10:£1.4300
      • 1:£1.9500
      SIHB12N60E-GE3
      DISTI # 2364071      		Vishay IntertechnologiesMOSFET, N-CH, 600V, 12A, TO-263
      RoHS: Compliant      		1160
      • 5000:$1.3700
      • 2500:$1.4300
      • 1000:$1.5300
      • 500:$1.8500
      • 100:$2.2500
      • 10:$2.7900
      • 1:$3.1100
      영상 부분 # 설명
      M24256-BWMN6TP

      Mfr.#: M24256-BWMN6TP

      OMO.#: OMO-M24256-BWMN6TP

      		 EEPROM 256K (32Kx8)
      BAV99LT3G

      Mfr.#: BAV99LT3G

      OMO.#: OMO-BAV99LT3G

      		 Diodes - General Purpose, Power, Switching 70V 215mA Dual
      LMR14206XMK/NOPB

      Mfr.#: LMR14206XMK/NOPB

      OMO.#: OMO-LMR14206XMK-NOPB

      		 Switching Voltage Regulators SIMPLE SWITCHER 42 Vin,0.6A SD Vltg Reg
      B82793S0513N201

      Mfr.#: B82793S0513N201

      OMO.#: OMO-B82793S0513N201-EPCOS

      		 Common Mode Filters / Chokes 51uH 800mA 30% 7.1x6mm SMD
      LMR14206XMK/NOPB

      Mfr.#: LMR14206XMK/NOPB

      OMO.#: OMO-LMR14206XMK-NOPB-TEXAS-INSTRUMENTS

      		 Voltage Regulators - Switching Regulators SIMPLE SWITCHER 42 Vin,0.6A SD Vltg Reg
      BAV99LT3G

      Mfr.#: BAV99LT3G

      OMO.#: OMO-BAV99LT3G-ON-SEMICONDUCTOR

      		 Diodes - General Purpose, Power, Switching 70V 215mA Dual
      12065C334KAT2A

      Mfr.#: 12065C334KAT2A

      OMO.#: OMO-12065C334KAT2A-AVX

      		 Multilayer Ceramic Capacitors MLCC - SMD/SMT 1206 0.33uF 50volts X7R 10%
      M24256-BWMN6TP

      Mfr.#: M24256-BWMN6TP

      OMO.#: OMO-M24256-BWMN6TP-STMICROELECTRONICS

      		 IC EEPROM 256K I2C 1MHZ 8SO
      유효성
      재고:
      500
      주문 시:
      2483
      수량 입력:
      SIHB12N60E-GE3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
      참고 가격(USD)
      수량
      단가
      내선 가격
      1
      US$2.08
      US$2.08
      10
      US$1.72
      US$17.20
      100
      US$1.34
      US$134.00
      500
      US$1.17
      US$585.00
      1000
      US$0.97
      US$971.00
      2000
      US$0.90
      US$1 808.00
      5000
      US$0.87
      US$4 355.00
      10000
      US$0.84
      US$8 370.00
      2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
      시작
      최신 제품
      • SUM70101EL 100 V P-Channel MOSFET
        SUM70101EL 100 V P-Channel MOSFET
        Vishay Siliconix's SUM70101EL MOSFET has industry leading RDS(ON) (0.0101 Ω at -10 V and 0.015 Ω at -4.5 V) minimizes conduction loss and increases efficiency.
      • SIRA20DP TrenchFET® Gen IV MOSFET
        SIRA20DP TrenchFET® Gen IV MOSFET
        Vishay Siliconix's SIRA20DP TrenchFET® Gen IV MOSFET provides the lowest maximum RDS(on) rating at VGS = 10 V.
      • P-Channel MOSFETs
        P-Channel MOSFETs
        Vishay Siliconix's p-channel TrenchFET® GEN III and IV MOSFETs have the lowest on-resistance per area for p-channel MOSFETs.
      • SiP32452, SiP32453 Load Switch
        SiP32452, SiP32453 Load Switch
        Vishay's load switches have a low input logic control threshold and a fast turn on time.
      • Compare SIHB12N60E-GE3
        Compare SIHB12N60E-GE3
        SIHB12N60E vs SIHB12N60EGE3 vs SIHB12N60ET1GE3
      • PowerPAIR®
        PowerPAIR®
        Vishay's PowerPAIR series are dual asymmetric MOSFETs that help to simplify design and decrease conduction losses.
      More Newest Products
      Top