TGF2819-FS

Mfr. #:: TGF2819-FS
제조사:: Qorvo
설명:: RF JFET Transistors DC-3.5GHz 32V GaN PAE 58% at 3.3GHz
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: TGF2819-FS 데이터 시트
배달:: DHL FedEx Ups TNT EMS
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ECAD Model:
추가 정보:: TGF2819-FS 추가 정보

제품 속성
속성 값

제조사:: 주식회사 크리

제품 카테고리:: RF JFET 트랜지스터

RoHS:: Y

트랜지스터 유형:: 헴트

기술:: GaN

얻다:: 14.5 dB

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 150 V

Vgs - 게이트 소스 항복 전압:: - 10 V, 2 V

Id - 연속 드레인 전류:: 10.4 A

출력 파워:: 75 W

최대 드레인 게이트 전압:: 50 V

최소 작동 온도:: - 40 C

최대 작동 온도:: + 107 C

Pd - 전력 손실:: 52 W

장착 스타일:: SMD/SMT

포장:: 릴

애플리케이션:: S 밴드 레이더 및 LTE 기지국

구성:: 하나의

동작 주파수:: 3.5 GHz

작동 온도 범위:: - 40 C to + 107 C

상표:: 울프스피드 / 크리어

상품 유형:: RF JFET 트랜지스터

공장 팩 수량:: 250

하위 카테고리:: 트랜지스터

Vgs th - 게이트 소스 임계 전압:: - 3 V

Tags: TGF281, TGF28, TGF2, TGF

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We provide 90-360 days warranty.

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

TGF2819-FS 설명

***W: RF Power Transistor, DC- 3.5 GHz, 100 W, 14 dB, 32 V, GaN

TGF2819-FS 추가 정보

TGF2819-FS/FL RF Power Transistors: Qorvot TGF2819-FS/FL RF Power Transistors provide a greater-than 100W Peak (20W Avg.) (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5GHz. Designed using TriQuint's proven TQGaN25HV process, the TGF2819-FS/FL RF Power Transistors offer advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. The optimization features provided by TGF2819-FS/FL may potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. Qorvo TGF2819-FS/FL RF Power Transistors are ideal for military radar, civilian radar, professional & military radio communications, test instrumentation, wideband or narrowband amplifiers, and jammers.Learn More

QPD GaN RF Transistors: Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.

Market price

부분 #	제조	설명	재고	가격
TGF2819-FS DISTI # 772-TGF2819-FS	Qorvo	RF JFET Transistors DC-3.5GHz 32V GaN PAE 58% at 3.3GHz RoHS: Compliant	0	25:$316.7800
TGF2819-FS-EVB1 DISTI # 772-TGF2819-FS-EVB1	Qorvo	RF Development Tools DC-3.5GHz 32V GaN Eval Board RoHS: Compliant	2	1:$875.0000

관련 상품

영상	부분 #	설명
	Mfr.#: TGF2819-FL OMO.#: OMO-TGF2819-FL	RF JFET Transistors DC-3.5GHz 32V GaN PAE 58% at 3.3GHz
	Mfr.#: TGF2819-FS OMO.#: OMO-TGF2819-FS	RF JFET Transistors DC-3.5GHz 32V GaN PAE 58% at 3.3GHz
	Mfr.#: TGF280L OMO.#: OMO-TGF280L	Thermal Interface Products Thermal Gap Fill Pad
	Mfr.#: TGF2819-FS OMO.#: OMO-TGF2819-FS-318	RF JFET Transistors DC-3.5GHz 32V GaN PAE 58% at 3.3GHz
	Mfr.#: TGF2819-FL OMO.#: OMO-TGF2819-FL-318	RF JFET Transistors DC-3.5GHz 32V GaN PAE 58% at 3.3GHz
	Mfr.#: TGF2819-FS-EVB1 OMO.#: OMO-TGF2819-FS-EVB1-1152	RF Development Tools DC-3.5GHz 32V GaN Eval Board
	Mfr.#: TGF2819-FLPCB4B01 OMO.#: OMO-TGF2819-FLPCB4B01-1152	RF Development Tools
	Mfr.#: TGF280L OMO.#: OMO-TGF280L-LEADER-TECH	신규 및 오리지널