IRG4PF50WPBF

Mfr. #:: IRG4PF50WPBF
제조사:: Infineon Technologies
설명:: IGBT Transistors 900V Warp 20-100kHz
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IRG4PF50WPBF 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:: IRG4PF50WPBF 추가 정보

제품 속성
속성 값

제조사: 인피니언 테크놀로지스

제품 카테고리: IGBT - 싱글

시리즈: -

포장: 대부분

단위 무게: 1.340411 oz

장착 스타일: 구멍을 통해

패키지 케이스: TO-247-3

입력 유형: 기준

장착형: 구멍을 통해

공급자-장치-패키지: TO-247AC

구성: 하나의

파워맥스: 200W

역복구-시간-trr: -

전류 수집기 Ic-Max: 51A

Voltage-Collector-Emitter-Breakdown-Max: 900V

IGBT형: -

전류 수집기 펄스 Icm: 204A

Vce-on-Max-Vge-Ic: 2.7V @ 15V, 28A

스위칭 에너지: 190μJ (on), 1.06mJ (off)

게이트 차지: 160nC

Td-on-off-25°C: 29ns/110ns

시험조건: 720V, 28A, 5 Ohm, 15V

Pd 전력 손실: 200 W

최대 작동 온도: + 150 C

최소 작동 온도: - 55 C

컬렉터-이미터-전압-VCEO-최대: 900 V

컬렉터-이미터-포화-전압: 2.25 V

연속 수집기 전류 at-25-C: 51 A

게이트 이미 터 누설 전류: 100 nA

최대 게이트 이미 터 전압: +/- 20 V

연속 수집기 전류 Ic-Max: 51 A

Tags: IRG4PF50WP, IRG4PF, IRG4P, IRG4, IRG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRG4PF50WPBF 설명

***Components: In a Tube of 25, Infineon IRG4PF50WPBF IGBT, 51 A 900 V, 3-Pin TO-247AC

***p One Stop Global: Trans IGBT Chip N-CH 900V 51A 200000mW 3-Pin(3+Tab) TO-247AC Tube

***ure Electronics: IRG4PF50WPBF Series 900 V 28 A N-Channel Latest Technology IGBT - TO-247AC

***ernational Rectifier: 900V Warp 20-100 kHz Discrete IGBT in a TO-247AC package

***ical: Trans IGBT Chip N-CH 900V 51A 3-Pin(3+Tab) TO-247AC

***ied Electronics & Automation: 900V WARP 20-100 KHZ DISCRETE IGBT IN A TO-247AC PACKAGE

***eco: 900V 51A WARP 20-100 KHZ DISCRETE IGBT IN A TO-247AC<AZ

***ineon: Target Applications: Pump; Refridgeration

***ronik: IGBT TO-247 RoHSconf

***i-Key: IGBT WARP 900V 51A TO247AC

*** Source Electronics: IGBT 900V 51A 200W TO247AC

***trelec: IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 900 V Collector-emitter saturation voltage: 2.25 V Current release time: 150 ns Power dissipation: 200 W

***ark: MOSFET; Transistor Type:MOSFET; Package/Case:TO-247AC; Power Dissipation, Pd:200W; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Current Rating:51A; Mounting Type:Through Hole; Voltage Rating:900V ;RoHS Compliant: Yes

***nell: IGBT, 900V, 51A, TO-247AC; Transistor Type:IGBT; Transistor Polarity:N Channel; Voltage, Vces:900V; Current Ic Continuous a Max:51A; Voltage, Vce Sat Max:2.7V; Power Dissipation:200W; Case Style:TO-247AC; Termination Type:Through Hole; Collector-to-Emitter Breakdown Voltage:900V; Current, Icm Pulsed:204A; Device Marking:IRG4PF50WPBF; No. of Pins:3; Power, Pd:200W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall:220ns; Time, Fall Max:220ns; Time, Rise:26ns; Transistors, No. of:1

***ment14 APAC: IGBT, 900V, 51A, TO-247AC; Transistor Type:IGBT; DC Collector Current:51A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:900V; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:51A; Current Temperature:25°C; Device Marking:IRG4PF50WPbF; Fall Time Max:220ns; Fall Time tf:220ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:204A; Rise Time:26ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:900V

IRG4PF50WPBF 추가 정보

300-1200V IGBTs: Infineon Rectifier has an extensive portfolio of IGBTs that ranges from 300V to 1200V and achieves the highest performance for specific application requirements. The Infineon IGBT portfolio includes the new ultra-fast IRG7PH 1200V Trench IGBTs that offer higher system efficiency while cutting switching losses and delivering higher switching frequencies. International Infineon IRG7PH ultra-fast 1200V IGBTs utilize thin wafer Field-Stop Trench technology that significantly reduces switching and conduction losses to deliver higher power density and greater efficiency at higher frequencies.Learn More

Market price

부분 #	제조	설명	재고	가격
IRG4PF50WPBF DISTI # V99:2348_13892015	Infineon Technologies AG	Trans IGBT Chip N-CH 900V 51A 3-Pin(3+Tab) TO-247AC Tube RoHS: Compliant	2095	1000:$4.3860 500:$5.0400 100:$5.6740 25:$6.6520 1:$8.4733
IRG4PF50WPBF DISTI # V36:1790_13892015	Infineon Technologies AG	Trans IGBT Chip N-CH 900V 51A 3-Pin(3+Tab) TO-247AC Tube RoHS: Compliant	0	1000:$3.5960 500:$4.0890 100:$4.6360 25:$5.2760 1:$6.0260
IRG4PF50WPBF DISTI # IRG4PF50WPBF-ND	Infineon Technologies AG	IGBT 900V 51A 200W TO247AC RoHS: Compliant Min Qty: 1 Container: Tube	727In Stock	1000:$3.8511 500:$4.4216 100:$5.0777 25:$5.8480 1:$6.7900
IRG4PF50WPBF DISTI # 32333330	Infineon Technologies AG	Trans IGBT Chip N-CH 900V 51A 3-Pin(3+Tab) TO-247AC Tube RoHS: Compliant	9612	2500:$3.4947 1000:$3.6234 500:$4.1679 250:$4.5639 100:$4.7817 25:$5.5143 10:$5.7816 4:$6.3954
IRG4PF50WPBF DISTI # 27012185	Infineon Technologies AG	Trans IGBT Chip N-CH 900V 51A 3-Pin(3+Tab) TO-247AC Tube RoHS: Compliant	2095	1000:$4.3860 500:$5.0400 100:$5.6740 25:$6.6520 2:$7.7030
IRG4PF50WPBF DISTI # SP001533582	Infineon Technologies AG	Trans IGBT Chip N-CH 900V 51A 3-Pin(3+Tab) TO-247AC (Alt: SP001533582) RoHS: Compliant Min Qty: 1	Europe - 405	1000:€2.6900 500:€2.8900 100:€2.9900 50:€3.0900 25:€3.1900 10:€3.3900 1:€3.6900
IRG4PF50WPBF DISTI # IRG4PF50WPBF	Infineon Technologies AG	Trans IGBT Chip N-CH 900V 51A 3-Pin(3+Tab) TO-247AC - Bulk (Alt: IRG4PF50WPBF) RoHS: Compliant Min Qty: 104 Container: Bulk	Americas - 0	1040:$2.9900 520:$3.0900 312:$3.1900 208:$3.2900 104:$3.4900
IRG4PF50WPBF DISTI # IRG4PF50WPBF	Infineon Technologies AG	Trans IGBT Chip N-CH 900V 51A 3-Pin(3+Tab) TO-247AC (Alt: IRG4PF50WPBF) RoHS: Compliant Min Qty: 400	Asia - 0	20000:$3.2422 10000:$3.2837 4000:$3.3264 2000:$3.3701 1200:$3.4612 800:$3.5574 400:$3.6590
IRG4PF50WPBF DISTI # IRG4PF50WPBF	Infineon Technologies AG	Trans IGBT Chip N-CH 900V 51A 3-Pin(3+Tab) TO-247AC - Rail/Tube (Alt: IRG4PF50WPBF) RoHS: Compliant Min Qty: 400 Container: Tube	Americas - 0	4000:$3.1900 2400:$3.2900 1600:$3.3900 800:$3.4900 400:$3.5900
IRG4PF50WPBF DISTI # 38K2941	Infineon Technologies AG	IGBT Single Transistor, 51 A, 2.7 V, 200 W, 900 V, TO-247AC, 3 RoHS Compliant: Yes	0	500:$4.2500 250:$4.6600 100:$4.8800 50:$5.2500 25:$5.6300 10:$5.9000 1:$6.5200
IRG4PF50WPBF DISTI # 70017078	Infineon Technologies AG	900V Warp 20-100 kHz Discrete IGBT IN A TO-247AC Package RoHS: Compliant	310	1:$9.7300 10:$8.5800 100:$7.4900 500:$6.4900 1000:$5.7200
IRG4PF50WPBF DISTI # 942-IRG4PF50WPBF	Infineon Technologies AG	IGBT Transistors 900V Warp 20-100kHz RoHS: Compliant	367	1:$6.4600 10:$5.8400 25:$5.5700 100:$4.8300 250:$4.6100 500:$4.2100 1000:$3.6600
IRG4PF50WPBF	International Rectifier	Insulated Gate Bipolar Transistor, 51A I(C), 900V V(BR)CES, N-Channel, TO-247AC RoHS: Compliant	1788	1000:$3.1800 500:$3.3500 100:$3.4900 25:$3.6400 1:$3.9200
IRG4PF50WPBF DISTI # 5412060	Infineon Technologies AG	TRANSISTOR IGBT N-CH 900V 51A TO247AC, EA	2195	5:£2.6900 1:£2.7500
IRG4PF50WPBF	International Rectifier		22
IRG4PF50W DISTI # IRG4PF50WPBF	Infineon Technologies AG	Transistor: IGBT,900V,28A,200W,TO247-3	50	1:$6.1600 3:$5.5400 10:$4.7300 50:$4.2500
IRG4PF50WPBF DISTI # 8650659	Infineon Technologies AG	IGBT, 900V, 51A, TO-247AC RoHS: Compliant	70	500:$6.4700 250:$7.0900 100:$7.4300 25:$8.5600 10:$8.9800 1:$9.9400
IRG4PF50WPBF DISTI # 8650659	Infineon Technologies AG	IGBT, 900V, 51A, TO-247AC	0	100:£3.7700 50:£4.0500 10:£4.3300 5:£5.0300 1:£5.5300
IRG4PF50WPBF DISTI # XSKDRABS0026534	Infineon Technologies AG	RoHS: Compliant	255 in Stock0 on Order	255:$4.7280 175:$5.0640
IRG4PF50WPBF DISTI # IGBT1767	Infineon Technologies AG	IGBT TO-247 RoHS: Compliant	Stock DE - 1225Stock HK - 0Stock US - 0	25:$4.1400 75:$3.8900 125:$3.8300 225:$3.7600 400:$3.5400
IRG4PF50WPBF DISTI # IRG4PF50WPBF	Infineon Technologies AG	900V 51A 200W TO 247AC RoHS: Compliant	900	5:€4.0500 25:€3.4500 100:€3.1500 200:€2.8800

관련 상품

영상	부분 #	설명
	Mfr.#: IRG4PF50WPBF OMO.#: OMO-IRG4PF50WPBF	IGBT Transistors 900V Warp 20-100kHz
	Mfr.#: IRG4PF50WDPBF OMO.#: OMO-IRG4PF50WDPBF	IGBT Transistors 900V Warp 20-100kHz
	Mfr.#: IRG4PF50WD-201P OMO.#: OMO-IRG4PF50WD-201P-INFINEON-TECHNOLOGIES	IGBT 900V 51A 200W TO247AC
	Mfr.#: IRG4PF50WDPBF OMO.#: OMO-IRG4PF50WDPBF-INFINEON-TECHNOLOGIES	IGBT Transistors 900V Warp 20-100kHz
	Mfr.#: IRG4PF50W OMO.#: OMO-IRG4PF50W-1190	IGBT Transistor, N-CHAN, TO-247AC
	Mfr.#: IRG4PF50WD OMO.#: OMO-IRG4PF50WD-1190	신규 및 오리지널
	Mfr.#: IRG4PF50WDPBF,G4PF50WD,I OMO.#: OMO-IRG4PF50WDPBF-G4PF50WD-I-1190	신규 및 오리지널
	Mfr.#: IRG4PF50WDPBF. OMO.#: OMO-IRG4PF50WDPBF--1190	신규 및 오리지널
	Mfr.#: IRG4PF50WPB OMO.#: OMO-IRG4PF50WPB-1190	신규 및 오리지널
	Mfr.#: IRG4PF50WPBF,G4PF50W,IRG OMO.#: OMO-IRG4PF50WPBF-G4PF50W-IRG-1190	신규 및 오리지널

유효성

재고:: Available
주문 시:: 1000
수량 입력:

IRG4PF50WPBF의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

참고 가격(USD)

수량
단가
내선 가격

1: ~~US$4.32~~; ~~US$4.32~~

10: ~~US$4.10~~; ~~US$41.04~~

100: ~~US$3.89~~; ~~US$388.80~~

500: ~~US$3.67~~; ~~US$1 836.00~~

1000: ~~US$3.46~~; ~~US$3 456.00~~

2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.

시작

IRG4PF50WP 3
IRG4PF 11
IRG4P 217
IRG4 542
IRG 1459

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IRG4PF50WPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes