IXFN64N50P

IXFN64N50P
Mfr. #:
IXFN64N50P
제조사:
Littelfuse
설명:
MOSFET 500V 64A
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IXFN64N50P 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFN64N50P DatasheetIXFN64N50P Datasheet (P4)
ECAD Model:
추가 정보:
IXFN64N50P 추가 정보
제품 속성
속성 값
제조사:
익시스
제품 카테고리:
MOSFET
RoHS:
Y
기술:
장착 스타일:
섀시 마운트
패키지/케이스:
SOT-227-4
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
500 V
Id - 연속 드레인 전류:
61 A
Rds On - 드레인 소스 저항:
85 mOhms
Vgs - 게이트 소스 전압:
30 V
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
700 W
구성:
하나의
채널 모드:
상승
상표명:
HiPerFET
포장:
튜브
키:
9.6 mm
길이:
38.23 mm
시리즈:
IXFN64N50
트랜지스터 유형:
1 N-Channel
너비:
25.42 mm
상표:
익시스
순방향 트랜스컨덕턴스 - 최소:
50 S
가을 시간:
22 ns
상품 유형:
MOSFET
상승 시간:
25 ns
공장 팩 수량:
10
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
85 ns
일반적인 켜기 지연 시간:
30 ns
단위 무게:
1.058219 oz
Tags
IXFN64N5, IXFN64, IXFN6, IXFN, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
부분 # 제조 설명 재고 가격
IXFN64N50P
DISTI # 33152105
IXYS CorporationTrans MOSFET N-CH 500V 50A 4-Pin SOT-227B
RoHS: Compliant
1000
  • 10:$18.6094
IXFN64N50P
DISTI # IXFN64N50P-ND
IXYS CorporationMOSFET N-CH 500V 61A SOT-227
RoHS: Compliant
Min Qty: 1
Container: Tube
114In Stock
  • 500:$13.9656
  • 100:$15.9896
  • 30:$17.2040
  • 10:$18.7220
  • 1:$20.2400
IXFN64N50PD3
DISTI # IXFN64N50PD3-ND
IXYS CorporationMOSFET N-CH 500V 52A SOT-227B
RoHS: Compliant
Min Qty: 10
Container: Tube
Limited Supply - Call
    IXFN64N50PD2
    DISTI # IXFN64N50PD2-ND
    IXYS CorporationMOSFET N-CH 500V 52A SOT-227B
    RoHS: Compliant
    Min Qty: 10
    Container: Tube
    Temporarily Out of Stock
    • 10:$29.2300
    IXFN64N50P
    DISTI # V36:1790_15877437
    IXYS CorporationTrans MOSFET N-CH 500V 50A 4-Pin SOT-227B
    RoHS: Compliant
    0
    • 10000:$11.7900
    • 5000:$11.8000
    • 1000:$12.9800
    • 100:$15.6200
    • 10:$16.0900
    IXFN64N50P
    DISTI # 58M7625
    IXYS CorporationMOSFET, N CHANNEL, 500V, 61A, SOT-227B,Transistor Polarity:N Channel,Continuous Drain Current Id:61A,Drain Source Voltage Vds:500V,On Resistance Rds(on):0.085ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5.5V,MSL:- RoHS Compliant: Yes0
    • 250:$14.8200
    • 100:$16.1400
    • 50:$16.6300
    • 25:$17.3700
    • 10:$18.9100
    • 5:$19.4200
    • 1:$20.4400
    IXFN64N50P
    DISTI # 747-IXFN64N50P
    IXYS CorporationMOSFET 500V 64A
    RoHS: Compliant
    155
    • 1:$20.2400
    • 5:$19.2300
    • 10:$18.7200
    • 25:$17.2000
    • 50:$16.4700
    • 100:$15.9800
    • 200:$14.6700
    • 500:$13.9600
    IXFN64N50PD2
    DISTI # 747-IXFN64N50PD2
    IXYS CorporationDiscrete Semiconductor Modules 64 Amps 500V
    RoHS: Compliant
    0
      IXFN64N50PIXYS CorporationSingle N-Channel 500 Vds 85 mOhm 700 W Power Mosfet - SOT-227B
      RoHS: Compliant
      1659Tube
      • 1:$18.9100
      • 5:$17.2500
      • 10:$16.5800
      • 25:$15.7300
      • 50:$15.1200
      IXFN64N50P
      DISTI # 194568P
      IXYS CorporationMOSFET N-CHANNEL 500V 50A SOT227B, TU7
      • 5:£14.4900
      IXFN64N50P
      DISTI # 194568
      IXYS CorporationMOSFET N-CHANNEL 500V 50A SOT227B, EA19
      • 5:£14.4900
      • 1:£15.6900
      IXFN64N50P
      DISTI # 1427327
      IXYS CorporationMOSFET, N, SOT-227B28
      • 100:£11.6400
      • 50:£13.0600
      • 10:£13.6400
      • 5:£15.2600
      • 1:£16.0700
      IXFN64N50P
      DISTI # XSFP00000002805
      IXYS Corporation 
      RoHS: Compliant
      896 in Stock0 on Order
      • 896:$25.2100
      • 6:$27.0100
      IXFN64N50P
      DISTI # 1427327
      IXYS CorporationMOSFET, N, SOT-227B
      RoHS: Compliant
      8
      • 100:$24.1000
      • 30:$25.9300
      • 10:$28.2200
      • 1:$30.5000
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      Mfr.#: DRV5055A3QLPGM

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      Hall Effect Sensor 1mA Ratiometric 3.3V/5V 3-Pin TO-92
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      Mfr.#: LF444CN/NOPB

      OMO.#: OMO-LF444CN-NOPB-TEXAS-INSTRUMENTS

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      유효성
      재고:
      155
      주문 시:
      2138
      수량 입력:
      IXFN64N50P의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
      참고 가격(USD)
      수량
      단가
      내선 가격
      1
      US$20.24
      US$20.24
      5
      US$19.23
      US$96.15
      10
      US$18.72
      US$187.20
      25
      US$17.20
      US$430.00
      50
      US$16.47
      US$823.50
      100
      US$15.98
      US$1 598.00
      200
      US$14.67
      US$2 934.00
      500
      US$13.96
      US$6 980.00
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