IPP65R310CFDXKSA1

Mfr. #:: IPP65R310CFDXKSA1
제조사:: Infineon Technologies
설명:: MOSFET N-Ch 650V 11.4A TO220-3 CoolMOS CFD2
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IPP65R310CFDXKSA1 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:: IPP65R310CFDXKSA1 추가 정보

제품 속성
속성 값

제조사:: 인피니언

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: 구멍을 통해

패키지/케이스:: TO-220-3

채널 수:: 1 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 650 V

Id - 연속 드레인 전류:: 11.4 A

Rds On - 드레인 소스 저항:: 280 mOhms

Vgs th - 게이트 소스 임계 전압:: 3.5 V

Vgs - 게이트 소스 전압:: 20 V

Qg - 게이트 차지:: 41 nC

최소 작동 온도:: - 55 C

최대 작동 온도:: + 150 C

Pd - 전력 손실:: 104.2 W

구성:: 하나의

채널 모드:: 상승

상표명:: 쿨모스

포장:: 튜브

키:: 15.65 mm

길이:: 10 mm

시리즈:: CoolMOS CFD2

트랜지스터 유형:: 1 N-Channel

너비:: 4.4 mm

상표:: 인피니언 테크놀로지스

가을 시간:: 7 ns

상품 유형:: MOSFET

상승 시간:: 7.5 ns

공장 팩 수량:: 500

하위 카테고리:: MOSFET

일반적인 끄기 지연 시간:: 45 ns

일반적인 켜기 지연 시간:: 11 ns

부품 번호 별칭:: IPP65R310CFD IPP65R31CFDXK SP000745028

단위 무게:: 0.211644 oz

Tags: IPP65R31, IPP65R3, IPP65, IPP6, IPP

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPP65R310CFDXKSA1 설명

***Components: In a Tube of 500, N-Channel MOSFET, 11 A, 700 V, 3-Pin TO-220 Infineon IPP65R310CFDXKSA1

***ure Electronics: Single N-Channel 650 V 310 mOhm 41 nC CoolMOS Power Mosfet - TO-220-3

***ical: Trans MOSFET N-CH 700V 11.4A Automotive 3-Pin(3+Tab) TO-220 Tube

***p One Stop Japan: Trans MOSFET N-CH 700V 11.4A 3-Pin(3+Tab) TO-220

***et: Trans MOSFET N-CH 650V 11.4A 3-Pin TO-220 Tube

***ronik: N-CH 650V 11,4A 280mOhm TO220-3 RoHSconf

***i-Key: LOW POWER_LEGACY

***ark: Mosfet, N-Ch, 650V, 11.4A, To-220-3; Transistor Polarity:n Channel; Continuous Drain Current Id:11.4A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.28Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 650V, 11.4A, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:11.4A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.28ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:104.2W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS CFD2 Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET, CA-N, 650V, 11,4A, TO-220-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:11.4A; Tensione Drain Source Vds:650V; Resistenza di Attivazione Rds(on):0.28ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:104.2W; Modello Case Transistor:TO-220; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS CFD2 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

***ineon: 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts. | Summary of Features: 650V technology with integrated fast body diode; Limited voltage overshoot during hard commutation; Significant Q g reduction compared to 600V CFD technology; Tighter R DS(ON) max to R DS(on) typ window; Easy to design-in; Lower price compared to 600V CFD technology | Benefits: Low switching losses due to low Q rr at repetitive commutation on body diode; Self limiting di/dt and dv/dt; Low Q oss; Reduced turn on and turn of delay times; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; HID lamp ballast; LED lighting; eMobility

IPP65R310CFDXKSA1 추가 정보

CoolMOS™ Power Transistors: Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

Market price

부분 #	제조	설명	재고	가격
IPP65R310CFDXKSA1 DISTI # V99:2348_06382968	Infineon Technologies AG	Trans MOSFET N-CH 700V 11.4A 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant	500	5000:$1.1057 2500:$1.1232 500:$1.3961 100:$1.5939 25:$1.7892 10:$1.9880 1:$2.5645
IPP65R310CFDXKSA1 DISTI # V36:1790_06382968	Infineon Technologies AG	Trans MOSFET N-CH 700V 11.4A 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant	0	500000:$0.9712 250000:$0.9731 50000:$1.1010 5000:$1.3070 500:$1.3400
IPP65R310CFDXKSA1 DISTI # IPP65R310CFDXKSA1-ND	Infineon Technologies AG	MOSFET N-CH 650V 11.4A TO220 RoHS: Compliant Min Qty: 1 Container: Tube	500In Stock	5000:$1.0938 2500:$1.1358 500:$1.4724 100:$1.7921 25:$2.1036 10:$2.2300 1:$2.4800
IPP65R310CFDXKSA1 DISTI # 33639344	Infineon Technologies AG	Trans MOSFET N-CH 700V 11.4A 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant	500	6:$2.5645
IPP65R310CFDXK DISTI # IPP65R310CFDXKSA1	Infineon Technologies AG	Trans MOSFET N-CH 700V 11.4A 3-Pin(3+Tab) TO-220 - Rail/Tube (Alt: IPP65R310CFDXKSA1) RoHS: Compliant Min Qty: 500 Container: Tube	Americas - 0	5000:$1.0179 3000:$1.0359 2000:$1.0719 1000:$1.1119 500:$1.1539
IPP65R310CFDXKSA1 DISTI # 13AC9087	Infineon Technologies AG	MOSFET, N-CH, 650V, 11.4A, TO-220-3,Transistor Polarity:N Channel,Continuous Drain Current Id:11.4A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.28ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes	0	1000:$1.1700 500:$1.4100 100:$1.6200 10:$2.0200 1:$2.3700
IPP65R310CFD DISTI # 726-IPP65R310CFD	Infineon Technologies AG	MOSFET N-Ch 650V 11.4A TO220-3 CoolMOS CFD2 RoHS: Compliant	985	1:$2.3500 10:$2.0000 100:$1.6000 500:$1.4000 1000:$1.1600
IPP65R310CFDXKSA1 DISTI # 726-IPP65R310CFDXKSA	Infineon Technologies AG	MOSFET N-Ch 650V 11.4A TO220-3 CoolMOS CFD2 RoHS: Compliant	994	1:$2.3500 10:$2.0000 100:$1.6000 500:$1.4000 1000:$1.1600
IPP65R310CFDXKSA1 DISTI # 8576943	Infineon Technologies AG	MOSFET N-CH 700V 11A COOLMOS CFD2 TO-220, TU	500	5000:£0.9070 2500:£0.9260 500:£0.9450
IPP65R310CFDXKSA1 DISTI # 2726073	Infineon Technologies AG	MOSFET, N-CH, 650V, 11.4A, TO-220-3	0	500:£1.0800 250:£1.1600 100:£1.2300 10:£1.5500 1:£2.0500
IPP65R310CFDXKSA1 DISTI # 2726073	Infineon Technologies AG	MOSFET, N-CH, 650V, 11.4A, TO-220-3 RoHS: Compliant	0	5000:$1.7000 2500:$1.7200 500:$2.2200 100:$2.7100 25:$3.1700 10:$3.3700 1:$3.7400

IPP65R310CFDXKSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes