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IXFH26N50P3

IXFH26N50P3
Mfr. #:
IXFH26N50P3
제조사:
Littelfuse
설명:
MOSFET Polar3 HiPerFET Power MOSFET
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IXFH26N50P3 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFH26N50P3 DatasheetIXFH26N50P3 Datasheet (P4-P6)
ECAD Model:
추가 정보:
IXFH26N50P3 추가 정보
제품 속성
속성 값
제조사:
익시스
제품 카테고리:
MOSFET
RoHS:
Y
기술:
시
장착 스타일:
구멍을 통해
패키지/케이스:
TO-247-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
500 V
Id - 연속 드레인 전류:
26 A
Rds On - 드레인 소스 저항:
240 mOhms
Vgs th - 게이트 소스 임계 전압:
5 V
Vgs - 게이트 소스 전압:
30 V
Qg - 게이트 차지:
42 nC
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
500 W
구성:
하나의
채널 모드:
상승
상표명:
HiPerFET
포장:
튜브
키:
21.46 mm
길이:
16.26 mm
시리즈:
IXFH26N50
트랜지스터 유형:
1 N-Channel
유형:
Polar3 HiPerFET Power MOSFET
너비:
5.3 mm
상표:
익시스
순방향 트랜스컨덕턴스 - 최소:
14 S
가을 시간:
5 ns
상품 유형:
MOSFET
상승 시간:
7 ns
공장 팩 수량:
30
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
38 ns
일반적인 켜기 지연 시간:
21 ns
단위 무게:
0.056438 oz
Tags
IXFH26N50, IXFH26N5, IXFH26, IXFH2, IXFH, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 500 V 250 mOhm 42 nC 500 W Silicon Flange Mount Mosfet TO-247-3
***ical
Trans MOSFET N-CH 500V 26A 3-Pin(3+Tab) TO-247AD
***trelec
MOSFET, Single - N-Channel, 500V, 26A, 500W, TO-247
***ark
Mosfet, N-Ch, 500V, 26A, To-247; Transistor Polarity:n Channel; Continuous Drain Current Id:26A; Drain Source Voltage Vds:500V; On Resistance Rds(On):0.25Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Rohs Compliant: Yes
***el Electronic
MOSFET Polar3 HiPerFET Power MOSFET
***ure Electronics
Single N-Channel 500 V 0.18 Ohms Flange Mount Power Mosfet - TO-247AC
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 31A I(D), 500V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***nell
MOSFET, N, 500V, 31A, TO-247AC; Transistor Polarity: N Channel; Continuous Drain Current Id: 31A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.18ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power
***ure Electronics
Single N-Channel 600 V 220 mOhms Flange Mount Power Mosfet - TO-247AC
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 27A I(D), 600V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***nell
MOSFET, N, 600V, 27A, TO-247AC; Transistor Polarity: N Channel; Continuous Drain Current Id: 27A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.22ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power
***el Electronic
VISHAY SIHG22N50D-GE3 MOSFET Transistor, N Channel, 22 A, 500 V, 0.185 ohm, 10 V, 3 V
***ure Electronics
Single N-Channel 500 V 0.23 Ohm 98 nC 312 W Silicon Flange Mount Mosfet TO-247AC
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 22A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***nell
MOSFET, N-CH, 500V, 22A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.185ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:312W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-247AC; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
***emi
N-Channel Power MOSFET, SUPERFET® II, FAST, 600 V, 22 A, 170 mΩ, TO-247
***r Electronics
Power Field-Effect Transistor, 22A I(D), 600V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is suitable for various AC/DC power conversion for system miniaturization and higher efficiency.
***emi
N-Channel Power MOSFET, SUPERFET® II, FRFET®, 650V, 20.6A, 190mΩ, TO-247
***r Electronics
Power Field-Effect Transistor, 20.6A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB
***el Electronic
Aluminum - Polymer Capacitors 100μF ±20% Radial, Can - SMD 0.413 10.50mm Tape & Reel (TR) 27mOhm Surface Mount Hybrid ZA Capacitor Aluminum Polymer 100uF 20% 35V 2-Pin Surface Mount Paper T/R
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.
***icroelectronics
N-channel 600 V, 0.145 Ohm typ., 21 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-247 package
***ure Electronics
N-Channel 600 V 0.175 Ohm Flange Mount Power Mosfet - TO-247
***r Electronics
Power Field-Effect Transistor, 21A I(D), 600V, 0.175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
부분 # 제조 설명 재고 가격
IXFH26N50P3
DISTI # C1S331700098199		IXYS CorporationTrans MOSFET N-CH 500V 26A 3-Pin(3+Tab) TO-247AD
RoHS: Compliant		2
  • 1:$8.0300
IXFH26N50P3
DISTI # IXFH26N50P3-ND		IXYS CorporationMOSFET N-CH 500V 26A TO-247
RoHS: Compliant
Min Qty: 1
Container: Tube		82In Stock
  • 1020:$3.3110
  • 510:$3.9259
  • 120:$4.8483
  • 30:$5.3213
  • 1:$6.6200
IXFH26N50P3
DISTI # 34AC1884		IXYS CorporationMOSFET, N-CH, 500V, 26A, TO-247,Transistor Polarity:N Channel,Continuous Drain Current Id:26A,Drain Source Voltage Vds:500V,On Resistance Rds(on):0.25ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Power Dissipation RoHS Compliant: Yes26
  • 1:$6.9100
  • 10:$6.1800
  • 25:$5.3800
  • 50:$5.2700
  • 100:$5.0700
  • 250:$4.3300
  • 500:$4.1100
IXFH26N50P3
DISTI # 747-IXFH26N50P3		IXYS CorporationMOSFET Polar3 HiPerFET Power MOSFET
RoHS: Compliant		459
  • 1:$6.9100
  • 10:$6.1800
  • 25:$5.3800
  • 50:$5.2700
  • 100:$5.0700
  • 250:$4.3300
  • 500:$4.1100
  • 1000:$3.4600
  • 2500:$2.9700
IXFH26N50P3
DISTI # 8024360		IXYS CorporationMOSFET N 500V 26A POLAR3 HIPERFET TO247, EA42
  • 1:£4.6200
  • 6:£4.3700
  • 15:£4.1300
IXFH26N50P3
DISTI # 8024360P		IXYS CorporationMOSFET N 500V 26A POLAR3 HIPERFET TO247, TU56
  • 6:£4.3700
  • 15:£4.1300
IXFH26N50P3
DISTI # 2782972		IXYS CorporationMOSFET, N-CH, 500V, 26A, TO-247
RoHS: Compliant		24
  • 1:£5.9200
  • 10:£4.2800
  • 100:£3.9400
  • 250:£3.5200
  • 500:£3.1900
IXFH26N50P3
DISTI # 2782972		IXYS CorporationMOSFET, N-CH, 500V, 26A, TO-247
RoHS: Compliant		24
  • 1:$7.3000
  • 10:$6.8200
  • 100:$6.0300
  • 250:$5.7100
  • 500:$5.4100
  • 1000:$5.1400
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Mfr.#: VS-8EWF12SLHM3

OMO.#: OMO-VS-8EWF12SLHM3-VISHAY

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SCT3120ALGC11

Mfr.#: SCT3120ALGC11

OMO.#: OMO-SCT3120ALGC11-ROHM-SEMI

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OMO.#: OMO-RT314012F-TE-CONNECTIVITY

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유효성
재고:
348
주문 시:
2331
수량 입력:
IXFH26N50P3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$6.91
US$6.91
10
US$6.18
US$61.80
25
US$5.38
US$134.50
50
US$5.27
US$263.50
100
US$5.07
US$507.00
250
US$4.33
US$1 082.50
500
US$4.11
US$2 055.00
1000
US$3.46
US$3 460.00
2500
US$2.97
US$7 425.00
2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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