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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| SIA416DJ-T1-GE3 DISTI # V72:2272_09216729 | Vishay Intertechnologies | Trans MOSFET N-CH 100V 4.8A 6-Pin PowerPAK SC-70 T/R RoHS: Compliant | 3000 |
|
| SIA416DJ-T1-GE3 DISTI # V36:1790_09216729 | Vishay Intertechnologies | Trans MOSFET N-CH 100V 4.8A 6-Pin PowerPAK SC-70 T/R RoHS: Compliant | 0 | |
| SIA416DJ-T1-GE3 DISTI # SIA416DJ-T1-GE3CT-ND | Vishay Siliconix | MOSFET N-CH 100V 11.3A SC70-6L RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 1524In Stock |
|
| SIA416DJ-T1-GE3 DISTI # SIA416DJ-T1-GE3DKR-ND | Vishay Siliconix | MOSFET N-CH 100V 11.3A SC70-6L RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 1524In Stock |
|
| SIA416DJ-T1-GE3 DISTI # SIA416DJ-T1-GE3TR-ND | Vishay Siliconix | MOSFET N-CH 100V 11.3A SC70-6L RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR) | On Order |
|
| SIA416DJ-T1-GE3 DISTI # 32404542 | Vishay Intertechnologies | Trans MOSFET N-CH 100V 4.8A 6-Pin PowerPAK SC-70 T/R RoHS: Compliant | 3000 |
|
| SIA416DJ-T1-GE3 DISTI # SIA416DJ-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 100V 4.8A 6-Pin PowerPAK SC-70 T/R - Tape and Reel (Alt: SIA416DJ-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel | Americas - 0 |
|
| SIA416DJ-T1-GE3 DISTI # 99W9412 | Vishay Intertechnologies | MOSFET Transistor, N Channel, 11.3 A, 100 V, 0.068 ohm, 10 V, 1.6 V | 0 |
|
| SIA416DJ-T1-GE3 DISTI # 19X1926 | Vishay Intertechnologies | MOSFET Transistor, N Channel, 11.3 A, 100 V, 0.068 ohm, 10 V, 1.6 V RoHS Compliant: Yes | 668 |
|
| SIA416DJ-T1-GE3. DISTI # 30AC0108 | Vishay Intertechnologies | Transistor Polarity:N Channel,Continuous Drain Current Id:4.8A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.068ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.6V,Power Dissipation Pd:19W,No. of Pins:6Pins RoHS Compliant: No | 0 |
|
| SIA416DJ-T1-GE3 DISTI # 70617011 | Vishay Siliconix | SIA416DJ-T1-GE3 N-channel MOSFET Transistor,11.3 A,100 V,6-Pin PowerPAK SC-70 RoHS: Compliant | 0 |
|
| SIA416DJ-T1-GE3 DISTI # 78-SIA416DJ-T1-GE3 | Vishay Intertechnologies | MOSFET 100V Vds 20V Vgs PowerPAK SC-70 RoHS: Compliant | 5458 |
|
| SIA416DJ-T1-GE3 DISTI # 8181441P | Vishay Intertechnologies | TRANS MOSFET N-CH 100V 4.8A, RL | 10400 |
|
| SIA416DJ-T1-GE3 DISTI # TMOS2344 | Vishay Intertechnologies | N-CH 100V 11,3A 68mOhm PPAK RoHS: Compliant | Stock DE - 0Stock HK - 0Stock US - 0 |
|
| SIA416DJ-T1-GE3 DISTI # 2364067 | Vishay Intertechnologies | MOSFET, N-CH, 100V, 11.3A, PPAKSC70-6 RoHS: Compliant | 533 |
|
| SIA416DJ-T1-GE3 | Vishay Intertechnologies | MOSFET 100V Vds 20V Vgs PowerPAK SC-70 RoHS: Compliant | Americas - 33000 |
|
| SIA416DJ-T1-GE3 DISTI # 2364067 | Vishay Intertechnologies | MOSFET, N-CH, 100V, 11.3A, PPAKSC70-6 | 533 |
|
| 영상 | 부분 # | 설명 |
|---|---|---|
|
Mfr.#: SIA416DJ-T1-GE3 OMO.#: OMO-SIA416DJ-T1-GE3 |
MOSFET 100V Vds 20V Vgs PowerPAK SC-70 |
|
Mfr.#: SIA416DJ-T4-GE3 OMO.#: OMO-SIA416DJ-T4-GE3-1190 |
신규 및 오리지널 |
|
Mfr.#: SIA416DJ-T1-GE3 OMO.#: OMO-SIA416DJ-T1-GE3-VISHAY |
MOSFET N-CH 100V 11.3A SC70-6L |