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IPB60R120P7ATMA1

IPB60R120P7ATMA1
Mfr. #:
IPB60R120P7ATMA1
제조사:
Infineon Technologies
설명:
MOSFET HIGH POWER_NEW
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IPB60R120P7ATMA1 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
IPB60R120P7ATMA1 추가 정보
제품 속성
속성 값
제조사:
인피니언
제품 카테고리:
MOSFET
RoHS:
Y
기술:
시
장착 스타일:
SMD/SMT
패키지/케이스:
TO-263-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
600 V
Id - 연속 드레인 전류:
26 A
Rds On - 드레인 소스 저항:
100 mOhms
Vgs th - 게이트 소스 임계 전압:
3 V
Vgs - 게이트 소스 전압:
20 V
Qg - 게이트 차지:
36 nC
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
95 W
구성:
하나의
채널 모드:
상승
포장:
릴
트랜지스터 유형:
1 N-Channel
상표:
인피니언 테크놀로지스
가을 시간:
6 ns
상품 유형:
MOSFET
상승 시간:
14 ns
공장 팩 수량:
1000
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
81 ns
일반적인 켜기 지연 시간:
21 ns
부품 번호 별칭:
IPB60R120P7 SP001664922
Tags
IPB60R12, IPB60R1, IPB60R, IPB60, IPB6, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 600 V 120 mOhm 36 nC CoolMOS™ Power Mosfet - D2PAK
***ineon
Summary of Features: 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G | Benefits: Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency | Target Applications: TV power supply; Industrial SMPS; Server; Telecom; Lighting
***ark
Mosfet, N-Ch, 600V, 26A, To-263; Transistor Polarity:n Channel; Continuous Drain Current Id:26A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.1Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipationrohs Compliant: Yes
600V CoolMOS P7 MOSFETs
Infineon 600V CoolMOS P7 MOSFETs are 7th generation devices and utilize revolutionary technology for high voltage power MOSFETs. The transistors are designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 combines the benefits of a fast switching SJ MOSFET with excellent ease of use. The 600V P7 feature very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Extremely low switching and conduction losses make switching applications even more efficient, compact and cooler.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
부분 # 제조 설명 재고 가격
IPB60R120P7ATMA1
DISTI # V72:2272_18787577		Infineon Technologies AGHIGH POWER_NEW950
  • 500:$2.1410
  • 250:$2.4120
  • 100:$2.5400
  • 25:$2.6320
  • 10:$2.9240
  • 1:$3.7796
IPB60R120P7ATMA1
DISTI # V36:1790_18787577		Infineon Technologies AGHIGH POWER_NEW0
  • 1000000:$1.5240
  • 500000:$1.5260
  • 100000:$1.6640
  • 10000:$1.8870
  • 1000:$1.9240
IPB60R120P7ATMA1
DISTI # IPB60R120P7ATMA1CT-ND		Infineon Technologies AGMOSFET N-CH TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1761In Stock
  • 500:$2.3491
  • 100:$2.7595
  • 10:$3.3680
  • 1:$3.7500
IPB60R120P7ATMA1
DISTI # IPB60R120P7ATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1761In Stock
  • 500:$2.3491
  • 100:$2.7595
  • 10:$3.3680
  • 1:$3.7500
IPB60R120P7ATMA1
DISTI # IPB60R120P7ATMA1TR-ND		Infineon Technologies AGMOSFET N-CH TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		1000In Stock
  • 5000:$1.7586
  • 2000:$1.8273
  • 1000:$1.9235
IPB60R120P7ATMA1
DISTI # 33092983		Infineon Technologies AGHIGH POWER_NEW1000
  • 1000:$1.6389
IPB60R120P7ATMA1
DISTI # 33590324		Infineon Technologies AGHIGH POWER_NEW1000
  • 1000:$2.7812
IPB60R120P7ATMA1
DISTI # 32928341		Infineon Technologies AGHIGH POWER_NEW950
  • 4:$3.7796
IPB60R120P7ATMA1
DISTI # IPB60R120P7ATMA1		Infineon Technologies AGHIGH POWER_NEW - Tape and Reel (Alt: IPB60R120P7ATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 6000:$1.5900
  • 10000:$1.5900
  • 4000:$1.6900
  • 1000:$1.7900
  • 2000:$1.7900
IPB60R120P7ATMA1
DISTI # SP001664922		Infineon Technologies AGHIGH POWER_NEW (Alt: SP001664922)
RoHS: Compliant
Min Qty: 1000		Europe - 0
  • 10000:€1.3900
  • 6000:€1.4900
  • 4000:€1.5900
  • 2000:€1.6900
  • 1000:€1.7900
IPB60R120P7ATMA1
DISTI # 49AC7996		Infineon Technologies AGMOSFET, N-CH, 600V, 26A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:26A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.1ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power DissipationRoHS Compliant: Yes0
  • 500:$2.1900
  • 250:$2.4400
  • 100:$2.5800
  • 50:$2.7100
  • 25:$2.8400
  • 10:$2.9700
  • 1:$3.4900
IPB60R120P7ATMA1
DISTI # 726-IPB60R120P7ATMA1		Infineon Technologies AGMOSFET HIGH POWER_NEW
RoHS: Compliant		17096
  • 1:$3.4600
  • 10:$2.9400
  • 100:$2.5500
  • 250:$2.4200
  • 500:$2.1700
  • 1000:$1.8300
  • 2000:$1.7400
IPB60R120P7ATMA1Infineon Technologies AGSingle N-Channel 600 V 120 mOhm 36 nC CoolMOS Power Mosfet - D2PAK
RoHS: Not Compliant		1000Reel
  • 1000:$1.7000
IPB60R120P7ATMA1
DISTI # 2841644		Infineon Technologies AGMOSFET, N-CH, 600V, 26A, TO-263
RoHS: Compliant		0
  • 1000:$2.6200
  • 500:$2.6700
  • 250:$2.8200
  • 100:$2.9800
  • 10:$3.3700
  • 1:$3.6100
IPB60R120P7ATMA1
DISTI # XSFP00000130966		Infineon Technologies AG 
RoHS: Compliant		2000 in Stock0 on Order
  • 2000:$2.2700
  • 1000:$2.4300
IPB60R120P7ATMA1
DISTI # 2841644		Infineon Technologies AGMOSFET, N-CH, 600V, 26A, TO-2630
  • 500:£1.7000
  • 250:£1.8800
  • 100:£1.9900
  • 10:£2.2900
  • 1:£3.0300
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유효성
재고:
17
주문 시:
2000
수량 입력:
IPB60R120P7ATMA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$3.46
US$3.46
10
US$2.94
US$29.40
100
US$2.55
US$255.00
250
US$2.42
US$605.00
500
US$2.17
US$1 085.00
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