ZXMP3A16DN8TA

Mfr. #:: ZXMP3A16DN8TA
제조사:: Diodes Incorporated
설명:: MOSFET Dl 30V P-Chnl UMOS
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: ZXMP3A16DN8TA 데이터 시트
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HTML Datasheet:: ZXMP3A16DN8TA Datasheet ZXMP3A16DN8TA Datasheet (P4-P6)ZXMP3A16DN8TA Datasheet (P7-P8)
ECAD Model:
추가 정보:: ZXMP3A16DN8TA 추가 정보

제품 속성
속성 값

제조사:: 다이오드 주식회사

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: SO-8

채널 수:: 2 Channel

트랜지스터 극성:: P-채널

Vds - 드레인 소스 항복 전압:: 30 V

Id - 연속 드레인 전류:: 5.5 A

Rds On - 드레인 소스 저항:: 45 mOhms

Vgs - 게이트 소스 전압:: 20 V

최소 작동 온도:: - 55 C

최대 작동 온도:: + 150 C

Pd - 전력 손실:: 2.1 W

구성:: 듀얼

채널 모드:: 상승

포장:: 릴

키:: 1.5 mm

길이:: 5 mm

시리즈:: ZXMP3

트랜지스터 유형:: 2 P-Channel

유형:: MOSFET

너비:: 4 mm

상표:: 다이오드 주식회사

가을 시간:: 21.4 ns

상품 유형:: MOSFET

상승 시간:: 6.5 ns

공장 팩 수량:: 500

하위 카테고리:: MOSFET

일반적인 끄기 지연 시간:: 37.1 ns

일반적인 켜기 지연 시간:: 3.8 ns

단위 무게:: 0.002610 oz

Tags: ZXMP3A16DN8T, ZXMP3A16D, ZXMP3A16, ZXMP3A, ZXMP3, ZXMP, ZXM

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

ZXMP3A16DN8TA 설명

***C: Trans MOSFET P-CH 30V 5.5A 8-Pin SOIC T/R Trans MOSFET P-CH 30V 5.5A 8-Pin SOIC T/R

***ure Electronics: Dual P-Channel 30 V 0.045 Ohm Surface Mount Enhancement Mode MOSFET - SOIC-8

***des Inc SCT: Dual P-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS

***ark: Mosfet, Dual, P-Ch, 30V, 5.5A Rohs Compliant: Yes

***ronik: DUALMOS -30V 45mOhm -5.5A SO-8

***C: Trans MOSFET N-CH 30V 6.2A 8-Pin SOIC T/R Trans MOSFET N-CH 30V 6.2A 8-Pin SOIC T/R

***ure Electronics: ZXMN3A06 Series Dual 30 V 0.035 Ohm N-Channel Enhancement Mode MOSFET - SOIC-8

***nell: MOSFET, DUAL, N, 30V, SO-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 6.2A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.035ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 2.1W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Continuous Drain Current Id, N Channel: 6.2A; Current Id Max: 6.2A; Drain Source Voltage Vds, N Channel: 30V; Module Configuration: Dual; No. of Transistors: 2; On Resistance Rds(on), N Channel: 0.035ohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pin Configuration: 1(S1), 2(G1),3(S2),4(G2),5+6(D2),7+8(D1); Pulse Current Idm: 30A; Termination Type: Surface Mount Device; Voltage Vds Typ: 30V; Voltage Vgs Rds on Measurement: 10V

***ure Electronics: Dual N & P Channel 30 V 6.4 A 2.1 W Surface Mount Complementary Mosfet - SOIC-8

***et: Trans MOSFET N/P-CH 30V 6.4A/5.5A 8-Pin SOIC T/R

***ment14 APAC: MOSFET, DUAL, NP, SO-8; Transistor Polarity:N and P Channel; Continuous Drain Current Id:6.4A; Drain Source Voltage Vds:30V; On Resistance Rds(on):35mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Cont Current Id P Channel:5.4A; Continuous Drain Current Id, N Channel:6.4A; Continuous Drain Current Id, P Channel:-5.4A; Current Id Max:6.4A; Current Temperature:25°C; Drain Source Voltage Vds, N Channel:30V; Drain Source Voltage Vds, P Channel:-30V; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Module Configuration:Dual; No. of Transistors:2; On Resistance Rds(on), N Channel:0.035ohm; On Resistance Rds(on), P Channel:0.048ohm; On State Resistance N Channel Max:35mohm; On State Resistance P Channel Max:48mohm; Package / Case:SOIC; Power Dissipation Pd:1.25W; Power Dissipation Pd:2.1W

***(Formerly Allied Electronics): SI4431CDY-T1-GE3 P-channel MOSFET Transistor; 7.2 A; 30 V; 8-Pin SOIC

***ure Electronics: Single P-Channel 30 V 32 mOhms Surface Mount Power Mosfet - SOIC-8

*** Stop Electro: Small Signal Field-Effect Transistor, 9A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***ark: Mosfet, P Channel, -30V, -9A, Soic-8, Full Reel; Transistor Polarity:p Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:9A; On Resistance Rds(On):0.026Ohm; Transistor Mounting:surface Mount; No. Of Pins:8Pins Rohs Compliant: No

***(Formerly Allied Electronics): MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 0.045Ohm;ID -5.8A;SO-8;PD 2.5W;VGS +/-20V

***ure Electronics: Single P-Channel 30 V 0.045 Ohm 59 nC HEXFET® Power Mosfet - SOIC-8

***ineon SCT: -30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

***ark: Mosfet Transistor; Transistor Polarity:p Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:2.8A; On Resistance Rds(On):0.07Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V; No. Of Pins:8Pins Rohs Compliant: Yes

*** Stop Electro: Power Field-Effect Transistor, 6.7A I(D), 30V, 0.045ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET

***Yang: Transistor MOSFET Array Dual N-CH 30V 6A 8-Pin SOIC T/R - Tape and Reel

***emi: Power MOSFET 30V 6A 32 mOhm Dual N-Channel SO-8

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:6A; On Resistance Rds(On):0.024Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Product Range:-Rohs Compliant: Yes

***ure Electronics: ZXMP3A16 Series 30 V 0.04 Ohm P-Channel Enhancement Mode MOSFET - SOIC-8

***C: Trans MOSFET P-CH 30V 6.7A 8-Pin SOIC T/R

***(Formerly Allied Electronics): MOSFET P-Channel 30V 6.7A SOIC8

***ark: Mosfet, P-Ch, 30V, 6.7A, Soic Rohs Compliant: Yes

***des Inc SCT: P-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS

***S: French Electronic Distributor since 1988

ZXMP3A16DN8TA 추가 정보

Power MOSFETs: Diodes Inc. continues to expand its portfolio of power MOSFETs with new N- and P-channel devices with breakdown voltages up to 450V and a wide range of package options. The Diodes Inc. MOSFET portfolio is ideally suited to a range of applications, including DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive.

Market price

부분 #	제조	설명	재고	가격
ZXMP3A16DN8TA DISTI # 26572891	Zetex / Diodes Inc	Trans MOSFET P-CH 30V 5.5A Automotive 8-Pin SOIC T/R RoHS: Compliant	8000	500:$0.5150
ZXMP3A16DN8TA DISTI # ZXMP3A16DN8CT-ND	Diodes Incorporated	MOSFET 2P-CH 30V 4.2A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	37In Stock	100:$1.1437 10:$1.4470 1:$1.6300
ZXMP3A16DN8TA DISTI # ZXMP3A16DN8TR-ND	Diodes Incorporated	MOSFET 2P-CH 30V 4.2A 8-SOIC RoHS: Compliant Min Qty: 500 Container: Tape & Reel (TR)	Temporarily Out of Stock	500:$0.8611
ZXMP3A16DN8TA DISTI # ZXMP3A16DN8TA	Diodes Incorporated	Trans MOSFET P-CH 30V 5.5A 8-Pin SOIC T/R - Tape and Reel (Alt: ZXMP3A16DN8TA) RoHS: Not Compliant Min Qty: 500 Container: Reel	Americas - 0	500:$0.6149 1000:$0.5849 2000:$0.5579 3000:$0.5319 5000:$0.5209
ZXMP3A16DN8TA DISTI # 70438855	Diodes Incorporated	MOSFET Dual P-Channel 30V 5.5A SOIC8 RoHS: Compliant	0	25:$1.4700 50:$1.2700 100:$1.1500 250:$1.0600
ZXMP3A16DN8TA DISTI # 522-ZXMP3A16DN8TA	Diodes Incorporated	MOSFET Dl 30V P-Chnl UMOS RoHS: Compliant	490	1:$1.3600 10:$1.1600 100:$0.8860 500:$0.7830
ZXMP3A16DN8TA DISTI # 7082466P	Zetex / Diodes Inc	MOSFET DUAL P-CHANNEL 30V 5.5A SOIC8, RL	75	25:£1.0060 50:£0.9500 250:£0.8740 500:£0.7640
ZXMP3A16DN8TA	Zetex / Diodes Inc		1993

관련 상품

영상	부분 #	설명
	Mfr.#: RCLAMP0502A.TCT OMO.#: OMO-RCLAMP0502A-TCT	TVS Diodes / ESD Suppressors Low Capacitance TVS Array, 5V
	Mfr.#: IRLML6402TRPBF OMO.#: OMO-IRLML6402TRPBF	MOSFET MOSFT P-Ch -3.7A 65mOhm 8nC Log Lvl
	Mfr.#: IRLML6344TRPBF OMO.#: OMO-IRLML6344TRPBF	MOSFET MOSFT 5.0A 29mOhm 30V 2.5V drv capable
	Mfr.#: BAT54SLT1G OMO.#: OMO-BAT54SLT1G	Schottky Diodes & Rectifiers 30V 225mW Dual
	Mfr.#: TAJA106K010RNJ OMO.#: OMO-TAJA106K010RNJ	Tantalum Capacitors - Solid SMD 10V 10uF 10% 1206 ESR= 3 Ohms
	Mfr.#: 860010372006 OMO.#: OMO-860010372006	Aluminum Electrolytic Capacitors - Radial Leaded WCAP-ATG8 16V 100uF 20% ESR=1697mOhms
	Mfr.#: 22-23-2021 OMO.#: OMO-22-23-2021	Headers & Wire Housings VERT PCB HDR 2P TIN FRICTION LOCK
	Mfr.#: IRLML6344TRPBF OMO.#: OMO-IRLML6344TRPBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 30V 5A SOT23
	Mfr.#: IRLML6402TRPBF OMO.#: OMO-IRLML6402TRPBF-INFINEON-TECHNOLOGIES	MOSFET P-CH 20V 3.7A SOT-23
	Mfr.#: RCLAMP0502A.TCT OMO.#: OMO-RCLAMP0502A-TCT-SEMTECH	TVS DIODE 5V 18V SC89-6

유효성

재고:: 948
주문 시:: 2931
수량 입력:

ZXMP3A16DN8TA의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

참고 가격(USD)

수량
단가
내선 가격

1: ~~US$1.35~~; ~~US$1.35~~

10: ~~US$1.15~~; ~~US$11.50~~

100: ~~US$0.89~~; ~~US$88.60~~

2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.

시작

ZXMP3A16DN8T 3
ZXMP3A16D 4
ZXMP3A16 11
ZXMP3A 23
ZXMP3 36
ZXMP 138
ZXM 630

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ZXMP3A16DN8TA

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes