SIRA04DP-T1-GE3

Mfr. #:: SIRA04DP-T1-GE3
제조사:: Vishay
설명:: MOSFET N-CH 30V 40A PPAK SO-8
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SIRA04DP-T1-GE3 데이터 시트
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추가 정보:: SIRA04DP-T1-GE3 추가 정보

제품 속성
속성 값

Tags: SIRA04, SIRA0, SIRA, SIR

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIRA04DP-T1-GE3 설명

***ied Electronics & Automation: Semiconcuctor; Mosfet; TrenchFET; N-Channel; 30V; 40A; 2.15mohm @ 10V; PowerPAK SO-8

***ure Electronics: Single N-Channel 30 V 2.15 mOhm TrenchFET Gen IV Power Mosfet - PowerPAK SOIC-8

***et Europe: Trans MOSFET N-CH 30V 35.9A 8-Pin PowerPAK SO T/R

***ark: N-Channel 30-V (D-S) Mosfet Rohs Compliant: Yes

***Components: MOSFET N-CH 30V 35.9A POWERPAK SO8

***an P&S: 30V,40A,N-Channel MOSFET

***i-Key: MOSFET N-CH 30V 40A PPAK SO-8

***: N-CHANNEL 30-V (D-S)

***ment14 APAC: MOSFET, 30V, 40A, PPAKSO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0018ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:27.7W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V

SIRA04DP-T1-GE3 추가 정보

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

TrenchFET Gen IV MOSFETs: Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.

Market price

부분 #	제조	설명	재고	가격
SIRA04DP-T1-GE3 DISTI # V36:1790_09216068	Vishay Intertechnologies	Trans MOSFET N-CH 30V 35.9A 8-Pin PowerPAK SO EP T/R RoHS: Compliant	0	3000000:$0.5181 1500000:$0.5183 300000:$0.5305 30000:$0.5498 3000:$0.5529
SIRA04DP-T1-GE3 DISTI # SIRA04DP-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 30V 40A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2885In Stock	1000:$0.6165 500:$0.7808 100:$0.9452 10:$1.2120 1:$1.3600
SIRA04DP-T1-GE3 DISTI # SIRA04DP-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 30V 40A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2885In Stock	1000:$0.6165 500:$0.7808 100:$0.9452 10:$1.2120 1:$1.3600
SIRA04DP-T1-GE3 DISTI # SIRA04DP-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 30V 40A PPAK SO-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	15000:$0.5107 6000:$0.5307 3000:$0.5586
SIRA04DP-T1-GE3 DISTI # SIRA04DP-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 35.9A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIRA04DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 3000
SIRA04DP-T1-GE3 DISTI # SIRA04DP-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 35.9A 8-Pin PowerPAK SO T/R (Alt: SIRA04DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€0.4489 18000:€0.4689 12000:€0.5309 6000:€0.6549 3000:€0.9129
SIRA04DP-T1-GE3 DISTI # SIRA04DP-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 35.9A 8-Pin PowerPAK SO T/R (Alt: SIRA04DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
SIRA04DP-T1-GE3 DISTI # 70243884	Vishay Siliconix	Semiconcuctor,Mosfet,TrenchFET,N-Channel,30V,40A,2.15mohm @ 10V,PowerPAK SO-8 RoHS: Compliant	0	3000:$0.5720
SIRA04DP-T1-GE3 DISTI # 78-SIRA04DP-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant	2992	1:$1.3200 10:$1.0900 100:$0.8390 500:$0.7220 1000:$0.5690 3000:$0.5310 6000:$0.5050 9000:$0.4860
SIRA04DP-T1-GE3	Vishay Intertechnologies		3962
SIRA04DPT1GE3	Vishay Intertechnologies	Power Field-Effect Transistor, 40A I(D), 30V, 0.00215ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	3000
SIRA04DP-T1-GE3	Vishay Intertechnologies	30V,40A,N-Channel MOSFET	2400	1:$2.4500 100:$0.9800 500:$0.9100 1000:$0.8800
SIRA04DP-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs PowerPAK SO-8	Americas -

영상	부분 #	설명
	Mfr.#: SIRA04DP-T1-GE3 OMO.#: OMO-SIRA04DP-T1-GE3	MOSFET 30V Vds 20V Vgs PowerPAK SO-8
	Mfr.#: SIRA04DP-T1-GE3-CUT TAPE OMO.#: OMO-SIRA04DP-T1-GE3-CUT-TAPE-1190	신규 및 오리지널
	Mfr.#: SIRA04DP OMO.#: OMO-SIRA04DP-1190	신규 및 오리지널
	Mfr.#: SIRA04DP-T1-GE3 OMO.#: OMO-SIRA04DP-T1-GE3-VISHAY	MOSFET N-CH 30V 40A PPAK SO-8
	Mfr.#: SIRA04DPT1GE3 OMO.#: OMO-SIRA04DPT1GE3-1190	Power Field-Effect Transistor, 40A I(D), 30V, 0.00215ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

SIRA04DP-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes