SI4483ADY-T1-GE3

Name: Vishay - SI4483ADY-T1-GE3
Brand: Vishay
SKU: OMO-3047990
Price: 1.00 USD
Availability: InStock
Rating: 4.9 (1 reviews)

Mfr. #:: SI4483ADY-T1-GE3
제조사:: Vishay
설명:: MOSFET P-CH 30V 19.2A 8-SOIC
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SI4483ADY-T1-GE3 데이터 시트
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HTML Datasheet:: SI4483ADY-T1-GE3 Datasheet SI4483ADY-T1-GE3 Datasheet (P4-P6)SI4483ADY-T1-GE3 Datasheet (P7-P9)
ECAD Model:

제품 속성
속성 값

제조사: 비쉐이 실리콘

제품 카테고리: FET - 단일

시리즈: 트렌치FETR

포장: Digi-ReelR 대체 패키징

부분 별칭: SI4483ADY-GE3

단위 무게: 0.006596 oz

장착 스타일: SMD/SMT

패키지 케이스: 8-SOIC (0.154", 3.90mm Width)

기술: 시

작동 온도: -55°C ~ 150°C (TJ)

장착형: 표면 실장

채널 수: 1 Channel

공급자-장치-패키지: 8-SO

구성: 싱글 쿼드 드레인 트리플 소스

FET형: MOSFET P-채널, 금속 산화물

파워맥스: 5.9W

트랜지스터형: 1 P-Channel

드레인-소스 전압 Vdss: 30V

입력-커패시턴스-Ciss-Vds: 3900pF @ 15V

FET 기능: 기준

Current-Continuous-Drain-Id-25°C: 19.2A (Tc)

Rds-On-Max-Id-Vgs: 8.8 mOhm @ 10A, 10V

Vgs-th-Max-Id: 2.6V @ 250μA

Gate-Charge-Qg-Vgs: 135nC @ 10V

Pd 전력 손실: 2.9 W

최대 작동 온도: + 150 C

최소 작동 온도: - 55 C

가을철: 13 ns 28 ns

상승 시간: 13 ns 150 ns

Vgs 게이트 소스 전압: 25 V

Id-연속-드레인-전류: 13.5 A

Vds-드레인-소스-고장-전압: - 30 V

Rds-On-Drain-Source-Resistance: 8.8 mOhms

트랜지스터 극성: P-채널

일반 꺼짐 지연 시간: 49 ns 43 ns

일반 켜기 지연 시간: 14 ns 70 ns

채널 모드: 상승

Tags: SI4483, SI448, SI44, SI4

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI4483ADY-T1-GE3 설명

*** Source Electronics: Trans MOSFET P-CH 30V 19.2A 8-Pin SOIC N T/R / MOSFET P-CH 30V 19.2A 8-SOIC

***ure Electronics: P-CH MOSFET SO-8 30V 8.5MOHM @ 10V ESD PROTECTED

***nell: MOSFET, P CH, -30V, -19.2A, SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-19.2A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0127ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-2.1V; Power Dissipation Pd:5.9W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:-

Market price

부분 #	제조	설명	재고	가격
SI4483ADY-T1-GE3 DISTI # V72:2272_09216513	Vishay Intertechnologies	Trans MOSFET P-CH 30V 13.5A 8-Pin SOIC N T/R RoHS: Compliant	2252	1000:$0.5417 500:$0.5785 250:$0.6758 100:$0.6777 25:$0.8296 10:$0.8328 1:$0.9625
SI4483ADY-T1-GE3 DISTI # SI4483ADY-T1-GE3CT-ND	Vishay Siliconix	MOSFET P-CH 30V 19.2A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	5447In Stock	1000:$0.5948 500:$0.7534 100:$0.9715 10:$1.2290 1:$1.3900
SI4483ADY-T1-GE3 DISTI # SI4483ADY-T1-GE3DKR-ND	Vishay Siliconix	MOSFET P-CH 30V 19.2A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	5447In Stock	1000:$0.5948 500:$0.7534 100:$0.9715 10:$1.2290 1:$1.3900
SI4483ADY-T1-GE3 DISTI # SI4483ADY-T1-GE3TR-ND	Vishay Siliconix	MOSFET P-CH 30V 19.2A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	5000In Stock	2500:$0.5390
SI4483ADY-T1-GE3 DISTI # 29754202	Vishay Intertechnologies	Trans MOSFET P-CH 30V 13.5A 8-Pin SOIC N T/R RoHS: Compliant	2500	2500:$0.6688
SI4483ADY-T1-GE3 DISTI # 27148054	Vishay Intertechnologies	Trans MOSFET P-CH 30V 13.5A 8-Pin SOIC N T/R RoHS: Compliant	2252	1000:$0.5417 500:$0.5785 250:$0.6758 100:$0.6777 25:$0.8296 15:$0.8328
SI4483ADY-T1-GE3 DISTI # SI4483ADY-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 30V 13.5A 8-Pin SOIC N T/R (Alt: SI4483ADY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 7500	2500:$4.7300 5000:$3.2621 7500:$2.4256 12500:$1.9708 25000:$1.7849 62500:$1.7200 125000:$1.6597
SI4483ADY-T1-GE3 DISTI # SI4483ADY-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 30V 13.5A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4483ADY-T1-GE3) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.5089 5000:$0.4939 10000:$0.4739 15000:$0.4609 25000:$0.4479
SI4483ADY-T1-GE3 DISTI # 85W3209	Vishay Intertechnologies	Trans MOSFET P-CH 30V 13.5A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Alt: 85W3209) RoHS: Not Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1:$0.7990
SI4483ADY-T1-GE3 DISTI # 97W2656	Vishay Intertechnologies	MOSFET Transistor, P Channel, -19.2 A, -30 V, 0.0127 ohm, -4.5 V, -2.1 V , RoHS Compliant: Yes	4806	1:$1.2300 10:$1.0100 25:$0.9310 50:$0.8530 100:$0.7740 250:$0.7200 500:$0.6660
SI4483ADY-T1-GE3 DISTI # 85W3209	Vishay Intertechnologies	MOSFET, P CHANNEL, -30V, 0.0127OHM, -19.2A, SOIC-8,Transistor Polarity:P Channel,Continuous Drain Current Id:-19.2A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.0127ohm,Rds(on) Test Voltage Vgs:-4.5V,No. of Pins:8Pins , RoHS Compliant: Yes	4089	1:$1.4800 10:$1.2100 25:$1.1200 50:$1.0200 100:$0.9290 250:$0.8640 500:$0.7990
SI4483ADY-T1-GE3. DISTI # 30AC0165	Vishay Intertechnologies	P-CHANNEL 30-V (D-S) MOSFET , ROHS COMPLIANT: NO	0	1:$0.5840 2500:$0.5840
SI4483ADY-T1-GE3 DISTI # 781-SI4483ADY-GE3	Vishay Intertechnologies	MOSFET -30V Vds 25V Vgs SO-8 RoHS: Compliant	4185	1:$1.2300 10:$1.0100 100:$0.7740 500:$0.6660 1000:$0.5850 2500:$0.5840
SI4483ADY-T1-GE3 DISTI # C1S803603345321	Vishay Intertechnologies	MOSFETs	2500	2500:$0.8130
SI4483ADY-T1-GE3 DISTI # 2335315	Vishay Intertechnologies	MOSFET, P CH, -30V, -19.2A, SOIC RoHS: Compliant	5202	1:$1.9500 10:$1.6000 100:$1.2300 500:$1.0500 1000:$0.9270 2500:$0.9260
SI4483ADY-T1-GE3	Vishay Intertechnologies	MOSFET -30V Vds 25V Vgs SO-8 RoHS: Compliant	Americas - 2500	2500:$0.4970 5000:$0.4700 10000:$0.4540
SI4483ADY-T1-GE3 DISTI # 2335315	Vishay Intertechnologies	MOSFET, P CH, -30V, -19.2A, SOIC RoHS: Compliant	5490	5:£0.8680 25:£0.7800 100:£0.5980 250:£0.5570 500:£0.5150

SI4483ADY-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes