STU8N80K5

STU8N80K5
Mfr. #:
STU8N80K5
제조사:
STMicroelectronics
설명:
MOSFET N-Ch 800 V 0.76 Ohm 6 A Zener-protected
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
STU8N80K5 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
STU8N80K5 추가 정보 STU8N80K5 Product Details
제품 속성
속성 값
제조사:
ST마이크로일렉트로닉스
제품 카테고리:
MOSFET
RoHS:
Y
기술:
장착 스타일:
구멍을 통해
패키지/케이스:
TO-251-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
800 V
Id - 연속 드레인 전류:
6 A
Rds On - 드레인 소스 저항:
950 mOhms
Vgs th - 게이트 소스 임계 전압:
4 V
Vgs - 게이트 소스 전압:
30 V
Qg - 게이트 차지:
16.5 nC
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
110 W
구성:
하나의
채널 모드:
상승
상표명:
슈퍼메시
포장:
튜브
시리즈:
STU8N80K5
트랜지스터 유형:
1 N-Channel
상표:
ST마이크로일렉트로닉스
가을 시간:
20 ns
상품 유형:
MOSFET
상승 시간:
14 ns
공장 팩 수량:
3000
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
32 ns
일반적인 켜기 지연 시간:
12 ns
단위 무게:
0.139332 oz
Tags
STU8N, STU8, STU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 800 V, 0.8 Ohm typ., 6 A MDmesh K5 Power MOSFET in IPAK package
***ure Electronics
N-Channel 800 V 6 A 950 mOhm Through Hole SuperMESH™ 5 Power Mosfet - TO-220
***r Electronics
Power Field-Effect Transistor, 6A I(D), 800V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***icroelectronics
N-channel 800 V, 0.95 Ohm typ., 6 A MDmesh K5 Power MOSFET in IPAK package
***r Electronics
Power Field-Effect Transistor, 6A I(D), 800V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***enic
800V 6A 950m´Î@10V3A 110W 4V@100uA 1pF@100V N Channel 360pF@100V 13.4nC@0~10V -55¡Í~+150¡Í@(Tj) TO-251-3(IPAK) MOSFETs ROHS
***ical
Trans MOSFET N-CH 800V 5.7A 3-Pin(3+Tab) TO-251 Tube
***ronik
N-CH 800V 5,7A 950mOhm TO251-3
*** Electronics
COOLMOS N-CHANNEL POWER MOSFET
***ineon SCT
800V CoolMOS™ CE is Infineon’s high performance device family offering 800 volts break down voltage, PG-TO251-3, RoHS
***ineon
800V CoolMOS CE is Infineons high performance device family offering 800 volts break down voltage. The CE targets consumer electronics applications as well as Lighting. The new 800V selection series specifically aims at LED applications. With this specific CoolMOS family, Infineon combines long experience as the leading superjunction MOSFET supplier with best-in-class innovation. | Summary of Features: Low specific on-state resistance (R DS(on)*A); Very low energy storage in output capacitance (E oss) @ 400V; Low gate charge (Q g); Field-proven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding price/performance; High reliability; Ease-of-use | Target Applications: LED lighting
***icroelectronics
N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh M2 Power MOSFET in IPAK package
***ark
Power Mosfet, N Channel, 7 A, 650 V, 0.6 Ohm, 10 V, 3 V Rohs Compliant: Yes
*** Electronics
STMICROELECTRONICS STU11N65M2 Power MOSFET, N Channel, 7 A, 650 V, 0.6 ohm, 10 V, 3 V
***nell
MOSFET, N CHANNEL, 650V, 7A, TO-251-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 7A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.6ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; P
***ical
Trans MOSFET N-CH 700V 7.4A 3-Pin(3+Tab) TO-251 Tube
***ark
Mosfet, N-Ch, 700V, 7.4A, To-251; Transistor Polarity:n Channel; Continuous Drain Current Id:7.4A; Drain Source Voltage Vds:700V; On Resistance Rds(On):0.86Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ineon
CoolMOS CE is a technology platform of Infineons market leading high voltage power MOSFET designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. With the extended family, Infineon offers 600V, 650V and 700V devices targeting low power chargers for mobile devices and power tools, LCD, LED TV and LED lighting applications. | Summary of Features: Thermal behavior; 90C on device, open case; 50C/70C close case temperature; EMI within EN55022B standard; Ease of use and fast design-in | Benefits: Low conduction losses from large margin between R DS(on) typical to nominal; Low switching losses from optimized output capacitance (E oss); Optimized EMI to balance switching speed and EMI behavior; Good controllability given the integrated R g | Target Applications: Low power chargers; Adapters; PC silverbox; LCD TV; LED retrofit; LED drivers
***emi
Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 4.6 A, 950 mΩ, IPAK
***nell
MOSFET, N, 600V, I-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:4.6A; Resistance, Rds On:0.95ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:I-PAK; Termination Type:Through Hole; Alternate Case Style:TO-251AA; Current, Idm Pulse:13.8A; No. of Pins:3; Power Dissipation:54W; Power, Pd:54W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Voltage, Vds:600V; Voltage, Vds Max:600V; Voltage, Vgs th Max:5V; dv/dt:10V/µs
***rchild Semiconductor
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***icroelectronics
N-channel 600 V, 0.72 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in IPAK package
***ure Electronics
N-Channel 600 V 780 mOhm Through Hole Mdmesh II Plus Mosfet - IPAK
***r Electronics
Power Field-Effect Transistor, 5.5A I(D), 600V, 0.78ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
MDmesh K5 Power MOSFETs
STMicroelectronics MDmesh K5 series are very-high voltage MOSFETs with super-junction, industry's best RDS(on), and figure of merit for increased power density and efficiency. Typical applications include LED lighting, metering, solar inverters, 3-phase auxiliary power supplies and welding. The K5 series are available at 800V, 850V, 900V, 950V, 1050V, 1200V and 1500V.
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
STMicroelectronics SuperMESH High Voltage MOSFETs - Thru-Hole
부분 # 제조 설명 재고 가격
STU8N80K5
DISTI # 497-13658-5-ND
STMicroelectronicsMOSFET N CH 800V 6A IPAK
RoHS: Compliant
Min Qty: 1
Container: Tube
28In Stock
  • 2550:$1.8060
  • 525:$2.2485
  • 150:$2.6413
  • 75:$3.0476
  • 10:$3.2240
  • 1:$3.5900
STU8N80K5
DISTI # STU8N80K5
STMicroelectronicsTrans MOSFET N-CH 800V 6A 3-Pin TO-251 Tube - Rail/Tube (Alt: STU8N80K5)
RoHS: Compliant
Min Qty: 3000
Container: Tube
Americas - 0
  • 18000:$1.5900
  • 30000:$1.5900
  • 12000:$1.6900
  • 6000:$1.7900
  • 3000:$1.8900
STU8N80K5
DISTI # 89W1525
STMicroelectronicsPTD HIGH VOLTAGE0
  • 500:$1.6800
  • 250:$1.7300
  • 100:$2.0700
  • 50:$2.3900
  • 25:$2.5500
  • 10:$2.9100
  • 1:$3.3600
STU8N80K5
DISTI # 511-STU8N80K5
STMicroelectronicsMOSFET N-Ch 800 V 0.76 Ohm 6 A Zener-protected
RoHS: Compliant
0
  • 1:$3.4200
  • 10:$2.9100
  • 100:$2.5200
  • 250:$2.3900
  • 500:$2.1500
  • 1000:$1.8100
  • 3000:$1.7200
STU8N80K5
DISTI # 7917958P
STMicroelectronicsPOWER MOSFET N CH SUPERMESH 5 800V 6A, TU2800
  • 25:£0.6380
STU8N80K5
DISTI # 7917958
STMicroelectronicsPOWER MOSFET N CH SUPERMESH 5 800V 6A, PK200
  • 25:£0.6380
  • 5:£0.6540
영상 부분 # 설명
STRVS185X02B

Mfr.#: STRVS185X02B

OMO.#: OMO-STRVS185X02B

TVS Diodes / ESD Suppressors Rep Volt Suppressor TVS 185V Ipp 2A
STRVS280X02F

Mfr.#: STRVS280X02F

OMO.#: OMO-STRVS280X02F

TVS Diodes / ESD Suppressors Rep Volt Suppressor TVS 280V Ipp 2A
STRVS185X02B

Mfr.#: STRVS185X02B

OMO.#: OMO-STRVS185X02B-STMICROELECTRONICS

TVS DIODE 128V 185V SMB
STRVS280X02F

Mfr.#: STRVS280X02F

OMO.#: OMO-STRVS280X02F-STMICROELECTRONICS

TVS Diodes - Transient Voltage Suppressors Rep Volt Suppressor TVS 280V Ipp 2A
유효성
재고:
Available
주문 시:
1000
수량 입력:
STU8N80K5의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$3.42
US$3.42
10
US$2.91
US$29.10
100
US$2.52
US$252.00
250
US$2.39
US$597.50
500
US$2.15
US$1 075.00
1000
US$1.81
US$1 810.00
3000
US$1.72
US$5 160.00
6000
US$1.66
US$9 960.00
시작
최신 제품
Top