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SCT30N120

SCT30N120
Mfr. #:
SCT30N120
제조사:
STMicroelectronics
설명:
MOSFET 1200V silicon carbide MOSFET
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
SCT30N120 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
SCT30N120 추가 정보 SCT30N120 Product Details
제품 속성
속성 값
제조사:
ST마이크로일렉트로닉스
제품 카테고리:
MOSFET
RoHS:
Y
기술:
SiC
장착 스타일:
구멍을 통해
패키지/케이스:
HiP-247-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
1.2 kV
Id - 연속 드레인 전류:
45 A
Rds On - 드레인 소스 저항:
80 mOhms
Vgs th - 게이트 소스 임계 전압:
2.6 V
Vgs - 게이트 소스 전압:
25 V, - 10 V
Qg - 게이트 차지:
105 nC
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 200 C
Pd - 전력 손실:
270 W
구성:
하나의
상표명:
HiP247â?¢
포장:
튜브
시리즈:
SCT30N120
트랜지스터 유형:
1 N-Channel
상표:
ST마이크로일렉트로닉스
가을 시간:
28 ns
상품 유형:
MOSFET
상승 시간:
20 ns
공장 팩 수량:
600
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
45 ns
일반적인 켜기 지연 시간:
19 ns
단위 무게:
1.340411 oz
Tags
SCT30N, SCT30, SCT3, SCT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an HiP247 package
***ure Electronics
Single N-Channel 1200 V 270 W 105 nC SiC Through Hole Mosfet - HiP247
***ark
Mosfet, N Ch, 1.2Kv, 40A, Hip247-3; Mosfet Configuration:single; Transistor Polarity:n Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:1.2Kv; On Resistance Rds(On):0.08Ohm; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes
SCT30N120 Silicon Carbide Power MOSFET
STMicroelectronics SCT30N120 Silicon Carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device's housing in the proprietary HiP247™ package, allows designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
Silicon Carbide Power MOSFETs
STMicroelectronics (SiC) MOSFETs feature very low RDS(on) area for the 1200V rating combined with excellent switching performance, translating into more efficient and compact systems. They have increased switching efficiency and operating frequency with the lowest Eoff vs. standard silicon technologies. A reduced form factor is possible thanks to the intrinsic body diode. Higher system efficiency and reliability are due to the maximum junction temperature at 200ºC.
부분 # 제조 설명 재고 가격
SCT30N120
DISTI # 32450096		STMicroelectronicsTrans MOSFET N-CH SiC 1.2KV 45A 3-Pin HIP-247 Tube
RoHS: Compliant		780
  • 250:$27.0900
  • 100:$27.4860
  • 50:$27.9270
  • 30:$28.6830
SCT30N120
DISTI # 497-14960-ND		STMicroelectronicsMOSFET N-CH 1200V 45A HIP247
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 120:$25.8818
  • 30:$28.6340
  • 1:$32.1500
SCT30N120
DISTI # V99:2348_17706747		STMicroelectronicsTrans MOSFET N-CH SiC 1.2KV 45A 3-Pin HIP-247 Tube
RoHS: Compliant		0
    SCT30N120
    DISTI # V36:1790_06556385    		STMicroelectronicsTrans MOSFET N-CH SiC 1.2KV 45A 3-Pin HIP-247 Tube
    RoHS: Compliant    		0
      SCT30N120D2
      DISTI # V36:1790_17718182      		STMicroelectronicsSCT30N120D20
        SCT30N120
        DISTI # SCT30N120        		STMicroelectronicsTrans MOSFET N-CH 1200V 45A 3-Pin HiP247 Tube (Alt: SCT30N120)
        RoHS: Compliant
        Min Qty: 1
        Container: Tube        		Europe - 0
        • 1:€36.3900
        • 5:€30.1500
        • 10:€27.0300
        • 50:€24.9500
        • 100:€23.2900
        SCT30N120
        DISTI # SCT30N120        		STMicroelectronicsTrans MOSFET N-CH 1200V 45A 3-Pin HiP247 Tube (Alt: SCT30N120)
        RoHS: Compliant
        Min Qty: 600
        Container: Tube        		Asia - 0
        • 600:$19.6667
        • 1200:$18.7302
        • 1800:$17.8788
        • 3000:$17.1014
        • 6000:$16.3889
        • 15000:$15.9459
        • 30000:$15.5263
        SCT30N120D2
        DISTI # SCT30N120D2        		STMicroelectronicsSTMSCT30N120D2 (Alt: SCT30N120D2)
        RoHS: Compliant
        Min Qty: 1        		Europe - 0
        • 1:€19.1900
        • 10:€17.6900
        • 25:€16.7900
        • 50:€16.2900
        • 100:€16.1900
        • 500:€15.9900
        • 1000:€15.7900
        SCT30N120
        DISTI # 94X2608        		STMicroelectronicsMOSFET, N CH, 1.2KV, 40A, HIP247-3,Transistor Polarity:N Channel,Continuous Drain Current Id:40A,Drain Source Voltage Vds:1.2kV,On Resistance Rds(on):0.08ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:2.6V RoHS Compliant: Yes0
        • 250:$29.0400
        • 100:$29.4700
        • 50:$29.9500
        • 25:$30.7600
        • 10:$31.6600
        • 5:$32.6700
        • 1:$33.7200
        SCT30N120D2
        DISTI # 65AC6290        		STMicroelectronicsPTD WBG & POWER RF0
        • 1:$14.7500
        SCT30N120H
        DISTI # 59AC7247        		STMicroelectronicsPTD WBG & POWER RF0
        • 1:$14.7500
        SCT30N120STMicroelectronicsSingle N-Channel 1200 V 270 W 105 nC SiC Through Hole Mosfet - HiP247
        RoHS: Compliant        		1114Tube
        • 1:$25.4800
        • 5:$23.9200
        • 25:$22.4500
        SCT30N120
        DISTI # 511-SCT30N120        		STMicroelectronicsMOSFET 1200V silicon carbide MOSFET
        RoHS: Compliant        		0
        • 1:$26.8200
        • 5:$26.5400
        • 10:$24.7400
        • 25:$23.6300
        • 100:$21.1200
        • 250:$20.1500
        SCT30N120D2
        DISTI # 511-SCT30N120D2        		STMicroelectronicsMOSFET0
        • 490:$17.1100
        SCT30N120H
        DISTI # 511-SCT30N120H        		STMicroelectronicsMOSFET0
        • 1000:$14.1700
        SCT30N120
        DISTI # TMOSP11114        		STMicroelectronicsSiC-N 1200V 45A 80mOhm HiP247-3Stock DE - 0Stock HK - 0Stock US - 0
        • 600:$34.5300
        SCT30N120H
        DISTI # TMOS2202        		STMicroelectronicsSiC-N 1200V 45A 80mOhm H2PAK-2Stock DE - 0Stock HK - 0Stock US - 0
        • 1000:$18.8700
        SCT30N120
        DISTI # 2451116        		STMicroelectronicsMOSFET, N CH, 1.2KV, 40A, HIP247-3
        RoHS: Compliant        		0
        • 100:£20.4000
        • 50:£20.6200
        • 10:£20.8500
        • 5:£21.0700
        • 1:£21.2900
        SCT30N120
        DISTI # XSFP00000005955        		STMicroelectronicsPower Field-EffectTransistor,N-Channel,Metal-oxideSemiconductor FET
        RoHS: Compliant        		1802 in Stock0 on Order
        • 1802:$46.3300
        • 30:$50.9600
        SCT30N120
        DISTI # 2451116        		STMicroelectronicsMOSFET, N CH, 1.2KV, 40A, HIP247-3
        RoHS: Compliant        		0
        • 10:$37.2800
        • 5:$40.0000
        • 1:$40.4200
        영상 부분 # 설명
        SCT3030KLHRC11

        Mfr.#: SCT3030KLHRC11

        OMO.#: OMO-SCT3030KLHRC11

        		 MOSFET 1200V 72A 339W SIC 30mOhm TO-247N
        SCT3022ALHRC11

        Mfr.#: SCT3022ALHRC11

        OMO.#: OMO-SCT3022ALHRC11

        		 MOSFET 650V 93A 339W SIC 22mOhm TO-247N
        SCT3060ALHRC11

        Mfr.#: SCT3060ALHRC11

        OMO.#: OMO-SCT3060ALHRC11

        		 MOSFET 650V 39A 165W SIC 60mOhm TO-247N
        SCT3160KLHRC11

        Mfr.#: SCT3160KLHRC11

        OMO.#: OMO-SCT3160KLHRC11

        		 MOSFET 1200V 17A 103W SIC 160mOhm TO-247N
        SCT30N120H

        Mfr.#: SCT30N120H

        OMO.#: OMO-SCT30N120H

        		 MOSFET
        SCT3030KLGC11

        Mfr.#: SCT3030KLGC11

        OMO.#: OMO-SCT3030KLGC11

        		 MOSFET N-Ch 1200V SiC 72A 30mOhm TrenchMOS
        SCT3160KL

        Mfr.#: SCT3160KL

        OMO.#: OMO-SCT3160KL-1190

        		 신규 및 오리지널
        SCT3604

        Mfr.#: SCT3604

        OMO.#: OMO-SCT3604-1190

        		 신규 및 오리지널
        SCT36XR31LU

        Mfr.#: SCT36XR31LU

        OMO.#: OMO-SCT36XR31LU-1190

        		 신규 및 오리지널
        SCT3040KLHRC11

        Mfr.#: SCT3040KLHRC11

        OMO.#: OMO-SCT3040KLHRC11-ROHM-SEMI

        		 AUTOMOTIVE GRADE N-CHANNEL SIC P
        유효성
        재고:
        Available
        주문 시:
        1000
        수량 입력:
        SCT30N120의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
        참고 가격(USD)
        수량
        단가
        내선 가격
        1
        US$26.82
        US$26.82
        5
        US$26.54
        US$132.70
        10
        US$24.74
        US$247.40
        25
        US$23.63
        US$590.75
        100
        US$21.12
        US$2 112.00
        250
        US$20.15
        US$5 037.50
        500
        US$19.18
        US$9 590.00
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