2SC6026MFVGR,L3F

Mfr. #:: 2SC6026MFVGR,L3F
제조사:: Toshiba
설명:: Bipolar Transistors - BJT VESM PLN
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: 2SC6026MFVGR,L3F 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: 2SC6026MFVGR,L3F Datasheet 2SC6026MFVGR,L3F Datasheet (P4)
ECAD Model:

제품 속성
속성 값

제조사:: 도시바

제품 카테고리:: 양극성 트랜지스터 - BJT

RoHS:: Y

장착 스타일:: SMD/SMT

패키지/케이스:: SOT-723-3

트랜지스터 극성:: NPN

컬렉터-이미터 전압 VCEO 최대:: 50 V

컬렉터-베이스 전압 VCBO:: 60 V

이미터-베이스 전압 VEBO:: 5 V

수집기-이미터 포화 전압:: 0.15 V

최대 DC 수집기 전류:: 150 mA

이득 대역폭 곱 fT:: 60 MHz

시리즈:: 2SC6026

DC 전류 이득 hFE 최대:: 400

키:: 0.5 mm

길이:: 1.2 mm

포장:: 릴

너비:: 0.8 mm

상표:: 도시바

지속적인 수집가 전류:: 150 mA

DC 수집기/기본 이득 hfe 최소:: 120

Pd - 전력 손실:: 150 mW

상품 유형:: BJT - 양극성 트랜지스터

공장 팩 수량:: 8000

하위 카테고리:: 트랜지스터

Tags: 2SC6026MFVG, 2SC6026M, 2SC6026, 2SC602, 2SC60, 2SC6, 2SC

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

2SC6026MFVGR,L3F 설명

*** Source Electronics: Trans GP BJT NPN 50V 0.15A 150mW 3-Pin VESM T/R / TRANS NPN 50V 0.15A VESM

***enic: 50V 150mW 150mA 200@2mA,6V 60MHz 150mV@100mA,10mA NPN +150¡æ@(Tj) SOT-723 Bipolar Transistors - BJT ROHS

***: VESM PLN ACTIVE

***ure Electronics: Bipolar Transistors - BJT NPN 50V 150MA

***et: Trans GP BJT NPN 50V 0.15A 3-Pin VMT T/R

***S: French Electronic Distributor since 1988

***el Electronic: Bipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEO

***i-Key: TRANS PREBIAS NPN 50V 0.1A VESM

***ure Electronics: Bipolar Transistors - BJT NPN General Purpose Amplification Transistor

*** Stop Electro: Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

***et: Trans GP BJT NPN 50V 0.1A 3-Pin SOT-723 T/R

***nell: TRANSISTOR, NPN, 50V, 0.1A, SOT-723; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 50V; Transition Frequency ft: 350MHz; Power Dissipation Pd: 150mW; DC Collector Current: 100mA; DC Current Gain hFE: 120hFE; Transistor Case Style: SOT-723; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ure Electronics: 50V 150mA 180MHz 260mW Surface Mount Bipolar (BJT) Transistor SOT-723

***r Electronics: Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

***ical: Trans GP BJT NPN 50V 0.15A 260mW Automotive 3-Pin SOT-723 T/R

***p One Stop: Trans Digital BJT NPN 50V 100mA 3-Pin VMT T/R

***ark: Transistor; Digital Transistor Polarity:single Npn; Collector Emitter Voltage V(Br)Ceo:50V; Continuous Collector Current Ic:100Ma; Base Input Resistor R1:10Kohm; Base-Emitter Resistor R2:-; Resistor Ratio, R1 / R2:-; Rf Transistor Rohs Compliant: Yes

***nell: TRANSISTOR; Digital Transistor Polarity: Single NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: -; Resistor Ratio, R1 / R2: -; RF Transistor Case: VMT; No. of Pins: 3 Pin; Product Range: DTC114T Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 300mV; Current Ic Continuous a Max: 10mA; DC Collector Current: 10mA; DC Current Gain hFE: 250hFE; Gain Bandwidth ft Typ: 250MHz; Hfe Min: 100; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Pd: 150mW; Termination Type: Surface Mount Device; Transistor Case Style: VMT; Transistor Polarity: NPN; Transistor Type: General Purpose; Transition Frequency ft: 250MHz

***r Electronics: Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

***emi: NPN Bipolar Digital Transistor (BRT)

***ical: Trans Digital BJT NPN 50V 100mA 600mW 3-Pin SOT-723 T/R

***ark: Brt Transistor, 50V, 22K/47Kohm, Sot-723; Digital Transistor Polarity:single Npn; Collector Emitter Voltage V(Br)Ceo:50V; Continuous Collector Current Ic:100Ma; Base Input Resistor R1:22Kohm; Base-Emitter Resistor R2:47Kohm Rohs Compliant: Yes

Market price

부분 #	제조	설명	재고	가격
2SC6026MFVGR,L3F DISTI # V72:2272_13897368	Toshiba America Electronic Components	X34 PB-F VESM PLN (LF) TRANSIS	113	100:$0.0535 25:$0.1293 10:$0.1307 1:$0.1995
2SC6026MFVGR,L3F DISTI # 2SC6026MFVGRL3FCT-ND	Toshiba America Electronic Components	TRANS NPN 50V 0.15A VESM RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	12391In Stock	2500:$0.0373 1000:$0.0414 500:$0.0608 250:$0.0714 100:$0.1136 25:$0.1460 10:$0.2030 1:$0.2200
2SC6026MFVGR,L3F DISTI # 2SC6026MFVGRL3FDKR-ND	Toshiba America Electronic Components	TRANS NPN 50V 0.15A VESM RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	12391In Stock	2500:$0.0373 1000:$0.0414 500:$0.0608 250:$0.0714 100:$0.1136 25:$0.1460 10:$0.2030 1:$0.2200
2SC6026MFVGR,L3F DISTI # 2SC6026MFVGRL3FTR-ND	Toshiba America Electronic Components	TRANS NPN 50V 0.15A VESM RoHS: Compliant Min Qty: 8000 Container: Tape & Reel (TR)	8000In Stock	200000:$0.0210 56000:$0.0236 24000:$0.0252 16000:$0.0268 8000:$0.0315
2SC6026MFVGR,L3F DISTI # 30612547	Toshiba America Electronic Components	X34 PB-F VESM PLN (LF) TRANSIS	7890	1000:$0.0562 500:$0.0572 200:$0.0593 156:$0.0680
2SC6026MFVGR,L3F DISTI # 2SC6026MFVGR,L3F	Toshiba America Electronic Components	Trans GP BJT NPN 50V 0.15A 3-Pin VESM Embossed T/R - Tape and Reel (Alt: 2SC6026MFVGR,L3F) RoHS: Compliant Min Qty: 8000 Container: Reel	Americas - 0	8000:$0.0235 16000:$0.0221 32000:$0.0209 48000:$0.0198 80000:$0.0192
2SC6026MFVGR,L3F DISTI # 757-2SC6026MFVGRL3F	Toshiba America Electronic Components	Bipolar Transistors - BJT VESM PLN RoHS: Compliant	11600	1:$0.2200 10:$0.1390 100:$0.0580 1000:$0.0400 2500:$0.0300 8000:$0.0260 24000:$0.0240 48000:$0.0230 96000:$0.0200
2SC6026MFVGR,L3F DISTI # C1S751201019033	Toshiba America Electronic Components	GP BJT	7890	1000:$0.0441 500:$0.0449 200:$0.0465 100:$0.0533 50:$0.1290
2SC6026MFVGR,L3F	Toshiba America Electronic Components	Bipolar Transistors - BJT VESM PLN RoHS: Compliant	Americas -
2SC6026MFVGRL3F	Toshiba America Electronic Components	Bipolar Transistors - BJT VESM PLN ACTIVE RoHS: Compliant	Americas -

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2SC6026MFVGR,L3F

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes