SI7900AEDN-T1-GE3

Mfr. #:: SI7900AEDN-T1-GE3
제조사:: Vishay
설명:: RF Bipolar Transistors MOSFET 20V 8.5A 3.1W 26mohm @ 4.5V
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SI7900AEDN-T1-GE3 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:: SI7900AEDN-T1-GE3 추가 정보

제품 속성
속성 값

제조사: 비쉐이

제품 카테고리: FET - 어레이

시리즈: 트렌치FETR

포장: Digi-ReelR 대체 패키징

부분 별칭: SI7900AEDN-GE3

장착 스타일: SMD/SMT

상표명: TrenchFET/파워팩

패키지 케이스: PowerPAKR 1212-8 Dual

기술: 시

작동 온도: -55°C ~ 150°C (TJ)

장착형: 표면 실장

채널 수: 2 Channel

공급자-장치-패키지: PowerPAKR 1212-8 Dual

구성: 듀얼

FET형: 2 N-Channel (Dual) Common Drain

파워맥스: 1.5W

트랜지스터형: 2 N-Channel

드레인-소스 전압 Vdss: 20V

입력-커패시턴스-Ciss-Vds: -

FET 기능: 로직 레벨 게이트

Current-Continuous-Drain-Id-25°C: 6A

Rds-On-Max-Id-Vgs: 26 mOhm @ 8.5A, 4.5V

Vgs-th-Max-Id: 900mV @ 250μA

Gate-Charge-Qg-Vgs: 16nC @ 4.5V

Pd 전력 손실: 1.5 W

최대 작동 온도: + 150 C

최소 작동 온도: - 55 C

가을철: 1300 ns

상승 시간: 1300 ns

Vgs 게이트 소스 전압: 12 V

Id-연속-드레인-전류: 6 A

Vds-드레인-소스-고장-전압: 20 V

Rds-On-Drain-Source-Resistance: 26 mOhms

트랜지스터 극성: N-채널

일반 꺼짐 지연 시간: 8600 ns

일반 켜기 지연 시간: 850 ns

채널 모드: 상승

Tags: SI7900AEDN-T1, SI7900AEDN-T, SI7900AE, SI7900A, SI7900, SI790, SI79, SI7

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI7900AEDN-T1-GE3 설명

***ied Electronics & Automation: SI7900AEDN-T1-GE3 Dual N-channel MOSFET Transistor; 6 A; 20V; 8-Pin PowerPAK 1212

***Components: In a Pack of 10, Dual N-Channel MOSFET, 6 A, 20 V, 8-Pin PowerPAK 1212 Vishay SI7900AEDN-T1-GE3

***ical: Trans MOSFET N-CH 20V 6A 8-Pin PowerPAK 1212 T/R

***i-Key: MOSFET 2N-CH 20V 6A PPAK 1212-8

SI7900AEDN-T1-GE3 추가 정보

Integrated MOSFETs with Common Drain: Vishay Integrated MOSFETs with Common Drain are 1, 2 and 3-channels offering surface mounting. The Integrated MOSFETs feature N-channel, and N+P-channel options, as well as a breakdown voltage range of 20V to 200V. The Enhancement Mode MOSFETs have 6 or 8-pins, a power dissipation range of 1.5W to 69.4W, and on drain-source resistance of 2.15mΩ to 26mΩ.

Integrated MOSFET Solutions: Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

Market price

부분 #	제조	설명	재고	가격
SI7900AEDN-T1-GE3 DISTI # SI7900AEDN-T1-GE3CT-ND	Vishay Siliconix	MOSFET 2N-CH 20V 6A PPAK 1212-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	6In Stock	1000:$0.5778 500:$0.7319 100:$0.9438 10:$1.1940 1:$1.3500
SI7900AEDN-T1-GE3 DISTI # SI7900AEDN-T1-GE3DKR-ND	Vishay Siliconix	MOSFET 2N-CH 20V 6A PPAK 1212-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	6In Stock	1000:$0.5778 500:$0.7319 100:$0.9438 10:$1.1940 1:$1.3500
SI7900AEDN-T1-GE3 DISTI # SI7900AEDN-T1-GE3TR-ND	Vishay Siliconix	MOSFET 2N-CH 20V 6A PPAK 1212-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	3000:$0.5236
SI7900AEDN-T1-GE3 DISTI # SI7900AEDN-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 6A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7900AEDN-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.4939 6000:$0.4799 12000:$0.4599 18000:$0.4469 30000:$0.4349
SI7900AEDN-T1-GE3 DISTI # 70617004	Vishay Siliconix	MOSFET 2N-CH 20V 6A PPAK 1212-8 RoHS: Compliant	0	300:$0.8200 600:$0.7500 1500:$0.6900 3000:$0.6100
SI7900AEDN-T1-GE3 DISTI # 781-SI7900AEDN-GE3	Vishay Intertechnologies	MOSFET 20V Vds 12V Vgs PowerPAK 1212-8 RoHS: Compliant	2990	1:$1.1900 10:$0.9800 100:$0.7520 500:$0.6470 1000:$0.5100 3000:$0.4760
SI7900AEDN-T1-GE3	Vishay Intertechnologies		960

관련 상품

영상	부분 #	설명
	Mfr.#: SI7900AEDN-T1-E3 OMO.#: OMO-SI7900AEDN-T1-E3	MOSFET 20V Vds 12V Vgs PowerPAK 1212-8
	Mfr.#: SI7900AEDN-T1-GE3 OMO.#: OMO-SI7900AEDN-T1-GE3	MOSFET 20V Vds 12V Vgs PowerPAK 1212-8
	Mfr.#: SI7900AEDN-T1-E3 OMO.#: OMO-SI7900AEDN-T1-E3-VISHAY	RF Bipolar Transistors MOSFET 20V 8.5A 1.5W
	Mfr.#: SI7900AEDN-T1-GE3 OMO.#: OMO-SI7900AEDN-T1-GE3-VISHAY	RF Bipolar Transistors MOSFET 20V 8.5A 3.1W 26mohm @ 4.5V
	Mfr.#: SI7900AEDN OMO.#: OMO-SI7900AEDN-1190	신규 및 오리지널
	Mfr.#: SI7900AEDN-T OMO.#: OMO-SI7900AEDN-T-1190	신규 및 오리지널
	Mfr.#: SI7900AEDN-T1 OMO.#: OMO-SI7900AEDN-T1-1190	신규 및 오리지널
	Mfr.#: SI7900AEDN-T1-E3 GE3 OMO.#: OMO-SI7900AEDN-T1-E3-GE3-1190	신규 및 오리지널

유효성

재고:: Available
주문 시:: 3000
수량 입력:

SI7900AEDN-T1-GE3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

참고 가격(USD)

수량
단가
내선 가격

1: ~~US$0.65~~; ~~US$0.65~~

10: ~~US$0.62~~; ~~US$6.20~~

100: ~~US$0.59~~; ~~US$58.71~~

500: ~~US$0.55~~; ~~US$277.25~~

1000: ~~US$0.52~~; ~~US$521.90~~

2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.

시작

SI7900AEDN-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes