MJD253-1G

Mfr. #:: MJD253-1G
제조사:: ON Semiconductor
설명:: Bipolar Transistors - BJT 4A 100V 12.5W PNP
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: MJD253-1G 데이터 시트
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HTML Datasheet:: MJD253-1G Datasheet MJD253-1G Datasheet (P4-P6)MJD253-1G Datasheet (P7-P8)
ECAD Model:

제품 속성
속성 값

제조사:: 온세미컨덕터

제품 카테고리:: 양극성 트랜지스터 - BJT

RoHS:: Y

장착 스타일:: SMD/SMT

패키지/케이스:: IPAK-3

트랜지스터 극성:: PNP

구성:: 하나의

컬렉터-이미터 전압 VCEO 최대:: 100 V

컬렉터-베이스 전압 VCBO:: 100 V

이미터-베이스 전압 VEBO:: 7 V

수집기-이미터 포화 전압:: 0.6 V

최대 DC 수집기 전류:: 4 A

이득 대역폭 곱 fT:: 40 MHz

최소 작동 온도:: - 65 C

최대 작동 온도:: + 150 C

시리즈:: MJD253

키:: 2.38 mm

길이:: 6.73 mm

포장:: 튜브

너비:: 6.22 mm

상표:: 온세미컨덕터

지속적인 수집가 전류:: 4 A

DC 수집기/기본 이득 hfe 최소:: 40

Pd - 전력 손실:: 12.5 W

상품 유형:: BJT - 양극성 트랜지스터

공장 팩 수량:: 75

하위 카테고리:: 트랜지스터

단위 무게:: 0.024727 oz

Tags: MJD25, MJD2, MJD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MJD253-1G 설명

***(Formerly Allied Electronics): ON Semi MJD253-1G PNP Bipolar Transistor, 4 A, 100 V, 3-Pin IPAK | ON Semiconductor MJD253-1G

***r Electronics: Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin

***emi: 4.0 A, 100 V PNP Bipolar Power Transistor

***ical: Trans GP BJT PNP 100V 4A Automotive 3-Pin(3+Tab) IPAK Tube

***ark: POWER TRANSISTOR, PNP, -100V, I-PAK; Transistor Polarity:PNP; Collector Emitter Voltage Max:100V; Continuous Collector Current:4A; Power Dissipation:12.5W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Qualification:- RoHS Compliant: Yes

***r Electronics: Small Signal Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-251

***emi: Bipolar Transistor, -100V, -4A, Low VCE(sat), PNP Single

***ical: Trans GP BJT PNP 100V 4A 1000mW 3-Pin(3+Tab) TP Bag

***ark: TRANSISTOR, PNP, 100V, 4A, 20W, TO-251; Transistor Polarity:PNP; Collector Emitter Voltage Max:100V; Continuous Collector Current:4A; Power Dissipation:20W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Qualification:- RoHS Compliant: Yes

***-Wing Technology: Bulk Through Hole PNP 3 Bipolar (BJT) Transistor 200 @ 500mA 5V 1muA ICBO 1W 130MHz

***r Electronics: Small Signal Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-251

***emi: Bipolar Transistor, -100V, -4A, Low VCE(sat), PNP Single

***et: Trans GP BJT PNP 100V 4A 3-Pin(3+Tab) TP Bag

***r Electronics: Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin

***emi: 6.0 A, 100 V PNP Bipolar Power Transistor

***p One Stop: Trans GP BJT PNP 100V 6A Automotive 3-Pin(3+Tab) IPAK Rail

***enic: 100V 20W 6A 15@3A4V 3MHz 1.5V@6A600mA PNP -65¡Í~+150¡Í@(Tj) IPAK Bipolar Transistors - BJT ROHS

***nell: TRANSISTOR, BIPOL, PNP, -100V; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -100V; Transition Frequency ft: 3MHz; Power Dissipation Pd: 20W; DC Collector Current: -6A; DC Current Gain hFE: 15hFE; Transistor Ca

***ark: BIPOLAR TRANSISTOR, PNP, -100V, D-PAK-3; Transistor Polarity:PNP; Collector Emitter Voltage Max:100V; Continuous Collector Current:6A; Power Dissipation:20W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes

Market price

부분 #	제조	설명	재고	가격
MJD253-1G DISTI # MJD253-1GOS-ND	ON Semiconductor	TRANS PNP 100V 4A IPAK RoHS: Compliant Min Qty: 1 Container: Tube	821In Stock	5025:$0.2693 2550:$0.2893 525:$0.3990 150:$0.5047 75:$0.6184 10:$0.6580 1:$0.7500
MJD253-1G DISTI # MJD253-1G	ON Semiconductor	Trans GP BJT PNP 100V 4A 3-Pin(3+Tab) IPAK Rail (Alt: MJD253-1G) RoHS: Compliant Min Qty: 75	Europe - 1575	750:€0.2399 450:€0.2589 300:€0.2799 150:€0.3059 75:€0.3739
MJD253-1G DISTI # MJD253-1G	ON Semiconductor	Trans GP BJT PNP 100V 4A 3-Pin(3+Tab) IPAK Rail - Bulk (Alt: MJD253-1G) RoHS: Compliant Min Qty: 1191 Container: Bulk	Americas - 0	11910:$0.2589 5955:$0.2649 3573:$0.2689 2382:$0.2719 1191:$0.2739
MJD253-1G DISTI # 26K4441	ON Semiconductor	POWER TRANSISTOR, PNP, -100V, I-PAK,Transistor Polarity:PNP,Collector Emitter Voltage V(br)ceo:100V,Transition Frequency ft:40MHz,Power Dissipation Pd:12.5W,DC Collector Current:-4A,DC Current Gain hFE:40hFE,No. of Pins:3Pins RoHS Compliant: Yes	0	10000:$0.2500 2500:$0.2600 1000:$0.3070 500:$0.3450 100:$0.3840 10:$0.5950 1:$0.7170
MJD253-1G DISTI # 70466681	ON Semiconductor	ON Semi MJD253-1G PNP Bipolar Transistor,4 A,100 V,3-Pin IPAK RoHS: Compliant	0	40:$0.7300 100:$0.7200 200:$0.6800 400:$0.6300
MJD253-1G DISTI # 863-MJD253-1G	ON Semiconductor	Bipolar Transistors - BJT 4A 100V 12.5W PNP RoHS: Compliant	664	1:$0.7100 10:$0.5890 100:$0.3800 1000:$0.3040 2500:$0.2570 10000:$0.2480 25000:$0.2380
MJD253-1G	ON Semiconductor	Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin RoHS: Compliant	30158	1000:$0.2800 500:$0.2900 100:$0.3000 25:$0.3200 1:$0.3400
MJD253-1G DISTI # 8024543P	ON Semiconductor	MJD253-1GBIP DPAK PNP 4A 100V SL F, TU	330	1000:£0.2550 400:£0.2940 100:£0.3330
MJD253-1G	ON Semiconductor	* FREE SHIPPING ORDERS OVER $100 * 4 A, 100 V, PNP, Si, POWER TRANSISTOR	363	177:$0.2380 40:$0.3400 1:$0.6800
MJD253-1G DISTI # 1705815	ON Semiconductor	POWER TRANSISTOR, PNP, -100V, I-PAK RoHS: Compliant	496	50000:$0.3610 25000:$0.3670 10000:$0.3820 2500:$0.3950 1000:$0.4680 100:$0.5850 10:$0.9060 1:$1.1000

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