FDC6432SH

Mfr. #:: FDC6432SH
제조사:: ON Semiconductor
설명:: MOSFET N/P-CH 30V/12V SSOT-6
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: FDC6432SH 데이터 시트
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HTML Datasheet:: FDC6432SH Datasheet FDC6432SH Datasheet (P4-P6)FDC6432SH Datasheet (P7-P8)
ECAD Model:

제품 속성
속성 값

Tags: FDC643, FDC64, FDC6, FDC

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDC6432SH 설명

***ical: Trans MOSFET N/P-CH 30V/12V 2.4A/2.5A 6-Pin SuperSOT T/R

***Yang: 12V, P-CH MOSFET,30V, SYNCFET, POWER TRENCH, SSOT6 - Bulk

***ser: MOSFETs 12V P-Channel PowerTrench

***emi: P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -3.5A, 80mΩ

***eco: Transistor MOSFET P-Channel 20 Volt 3.5A 6-Pin SuperSOT

***ure Electronics: P-Channel 20 V 80 mOhm Surface Mount 2.5V Specified PowerTrench Mosfet SSOT-6

***rchild Semiconductor: This P-Channel 2.5V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications.

***el Electronic: Chip Resistor - Surface Mount 10kOhms 0402 (1005 Metric) ±5% ±200ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 10K OHM 5% 1/5W 0402

***nell: MOSFET P CH 20V 3.5A SSOT6; Transistor Polarity: P Channel; Continuous Drain Current Id: -3.5A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.08ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -800mV; Power Dissipation Pd: 1.6W; Transistor Case Style: SuperSOT; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Id Max: -3.5A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Voltage Vds Typ: -20V; Voltage Vgs Max: -800mV; Voltage Vgs Rds on Measurement: -4.5V

***Yang: Transistor MOSFET Array Dual P-CH 20V 2.3A 6-Pin TSOT-23 T/R - Tape and Reel

***emi: Dual P-Channel PowerTrench® MOSFET, 1.8V Specified, -20V, -2.3A, 115mΩ

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:2.3A; On Resistance, Rds(on):0.115ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:SuperSOT-6 ;RoHS Compliant: Yes

***rchild Semiconductor: These P-Channel 1.8V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.

***et Europe: Trans MOSFET N/P-CH 20V 3A/2.2A 6-Pin TSOT-23 T/R

***ure Electronics: Dual N/P-Channel 20 V 70 mOhm Surface Mount PowerTrench Mosfet - SSOT-6

***r Electronics: Small Signal Field-Effect Transistor, 3A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

***ment14 APAC: MOSFET, DUAL, NP, SMD, SUPERSOT-6; Transistor Polarity:N and P Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:20V; On Resistance Rds(on):70mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:900mV; Power Dissipation Pd:960mW; Transistor Case Style:SuperSOT; No. of Pins:6; SVHC:No SVHC (19-Dec-2011); Current Id Max:3A; Package / Case:SuperSOT-6; Power Dissipation Pd:960mW; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:900mV; Voltage Vgs Rds on Measurement:4.5V

***rchild Semiconductor: These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.

***icroelectronics: P-channel 20 V, 0.087 Ohm typ., 3 A STripFET H7 Power MOSFET in a SOT23-6L package

***ure Electronics: P-Channel 20 V 0.1 O 1.6 W SMT STripFET H7 Power Mosfet - SOT-23-6

***ical: Trans MOSFET P-CH 30V 3A 6-Pin SOT-23 T/R

***i-Key: MOSFET N-CH 20V 3A SSOT-6

***ser: MOSFETs 20V N-Ch 1.8V Spec PowerTrench

***et: N-Channel 20V 3A (Ta) Surface Mount 6-SSOT

***i-Key: MOSFET 2P-CH 20V 1.9A SSOT6

***i-Key Marketplace: SMALL SIGNAL P-CHANNEL MOSFET

***ser: MOSFETs 20V, Dual, P-Channel

Market price

부분 #	제조	설명	재고	가격
FDC6432SH DISTI # FDC6432SH-ND	ON Semiconductor	MOSFET N/P-CH 30V/12V SSOT-6 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Limited Supply - Call
FDC6432SH DISTI # 512-FDC6432SH	ON Semiconductor	MOSFET 12V P-Channel PowerTrench RoHS: Compliant	0
FDC6432SH	Fairchild Semiconductor Corporation	Small Signal Field-Effect Transistor, 2.4A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	78908	1000:$0.4000 500:$0.4200 100:$0.4300 25:$0.4500 1:$0.4900

영상	부분 #	설명
	Mfr.#: FDC637AN OMO.#: OMO-FDC637AN	MOSFET SSOT-6 N-CH 20V
	Mfr.#: FDC6401N OMO.#: OMO-FDC6401N	MOSFET Dual N-Ch 2.5V Spec Power Trench
	Mfr.#: FDC653N OMO.#: OMO-FDC653N	MOSFET SSOT-6 N-CH 30V
	Mfr.#: FDC6303C OMO.#: OMO-FDC6303C-1190	신규 및 오리지널
	Mfr.#: FDC6329 OMO.#: OMO-FDC6329-1190	신규 및 오리지널
	Mfr.#: FDC6329L/329 OMO.#: OMO-FDC6329L-329-1190	신규 및 오리지널
	Mfr.#: FDC6332C OMO.#: OMO-FDC6332C-1190	신규 및 오리지널
	Mfr.#: FDC640P(Q) OMO.#: OMO-FDC640P-Q--1190	신규 및 오리지널
	Mfr.#: FDC645N-NL OMO.#: OMO-FDC645N-NL-1190	신규 및 오리지널
	Mfr.#: FDC654P / 654 OMO.#: OMO-FDC654P-654-1190	신규 및 오리지널

FDC6432SH

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes