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IPW65R110CFDFKSA1

IPW65R110CFDFKSA1
Mfr. #:
IPW65R110CFDFKSA1
제조사:
Infineon Technologies
설명:
MOSFET N-Ch 700V 31.2A TO247-3 CoolMOS CFD2
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IPW65R110CFDFKSA1 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
IPW65R110CFDFKSA1 추가 정보
제품 속성
속성 값
제조사:
인피니언
제품 카테고리:
MOSFET
RoHS:
Y
기술:
시
장착 스타일:
구멍을 통해
패키지/케이스:
TO-247-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
650 V
Id - 연속 드레인 전류:
31.2 A
Rds On - 드레인 소스 저항:
99 mOhms
Vgs th - 게이트 소스 임계 전압:
3.5 V
Vgs - 게이트 소스 전압:
20 V
Qg - 게이트 차지:
118 nC
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
277.8 W
구성:
하나의
채널 모드:
상승
상표명:
쿨모스
포장:
튜브
키:
21.1 mm
길이:
16.13 mm
시리즈:
CoolMOS CFD2
트랜지스터 유형:
1 N-Channel
너비:
5.21 mm
상표:
인피니언 테크놀로지스
가을 시간:
6 ns
상품 유형:
MOSFET
상승 시간:
11 ns
공장 팩 수량:
240
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
68 ns
일반적인 켜기 지연 시간:
16 ns
부품 번호 별칭:
IPW65R110CFD IPW65R11CFDXK SP000895232
단위 무게:
1.340411 oz
Tags
IPW65R11, IPW65R1, IPW65R, IPW65, IPW6, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 650 V 110 mOhm 118 nC CoolMOS™ Power Mosfet - TO-247-3
***Components
N-Channel MOSFET, 31 A, 700 V, 3-Pin TO-247 Infineon IPW65R110CFDFKSA1
***p One Stop Global
Trans MOSFET N-CH 700V 31.2A 3-Pin(3+Tab) TO-247 Tube
***p One Stop Japan
Trans MOSFET N-CH 700V 31.2A 3-Pin(3+Tab) TO-247
***et
Trans MOSFET N-CH 650V 31.2A 3-Pin TO-247 Tube
***ark
MOSFET, N CH, 700V, 31.2A, TO-247-3
***ronik
CoolMOS 650V 31A 110mOhm TO247
***i-Key
HIGH POWER_LEGACY
***ment14 APAC
Prices include import duty and tax. MOSFET, N CH, 700V, 31.2A, TO-247-3; Transistor Polarity:N Channel; Continuous Drain Current Id:31.2A; Drain Source Voltage Vds:700V; On Resistance Rds(on):0.099ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:277.8W; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CANALE N, 700V, 31.2A, TO-247-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:31.2A; Tensione Drain Source Vds:700V; Resistenza di Attivazione Rds(on):0.099ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:277.8W; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts. | Summary of Features: 650V technology with integrated fast body diode; Limited voltage overshoot during hard commutation; Significant Q g reduction compared to 600V CFD technology; Tighter R DS(ON) max to R DS(on) typ window; Easy to design-in; Lower price compared to 600V CFD technology | Benefits: Low switching losses due to low Q rr at repetitive commutation on body diode; Self limiting di/dt and dv/dt; Low Q oss; Reduced turn on and turn of delay times; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; HID lamp ballast; LED lighting; eMobility
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
부분 # 제조 설명 재고 가격
IPW65R110CFDFKSA1
DISTI # IPW65R110CFDFKSA1-ND		Infineon Technologies AGMOSFET N-CH 650V 31.2A TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 1200:$4.0406
  • 720:$4.7086
  • 240:$5.7105
  • 10:$6.8670
  • 1:$7.6300
IPW65R110CFDFKSA1
DISTI # IPW65R110CFDFKSA1		Infineon Technologies AGTrans MOSFET N-CH 700V 31.2A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: IPW65R110CFDFKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 240:$3.2900
  • 480:$3.1900
  • 960:$3.0900
  • 1440:$2.9900
  • 2400:$2.8900
IPW65R110CFDFKSA1
DISTI # IPW65R110CFD		Infineon Technologies AGTrans MOSFET N-CH 700V 31.2A 3-Pin(3+Tab) TO-247 (Alt: IPW65R110CFD)
RoHS: Compliant
Min Qty: 240		Asia - 0
    IPW65R110CFDFKSA1
    DISTI # SP000895232    		Infineon Technologies AGTrans MOSFET N-CH 700V 31.2A 3-Pin(3+Tab) TO-247 (Alt: SP000895232)
    RoHS: Compliant
    Min Qty: 1    		Europe - 0
    • 1:€6.5000
    • 10:€4.3500
    • 100:€3.6800
    • 250:€3.5000
    • 500:€3.1000
    • 1000:€2.4300
    IPW65R110CFDFKSA1
    DISTI # 85X6043    		Infineon Technologies AGMOSFET Transistor, N Channel, 31.2 A, 700 V, 0.099 ohm, 10 V, 4 V , RoHS Compliant: Yes0
    • 1:$6.1900
    • 10:$5.2600
    • 25:$5.0300
    • 50:$4.7900
    • 100:$4.5600
    IPW65R110CFDFKSA1Infineon Technologies AGPower Field-Effect Transistor, 31.2A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
    RoHS: Compliant    		62
    • 1000:$3.4600
    • 500:$3.6400
    • 100:$3.7900
    • 25:$3.9500
    • 1:$4.2500
    IPW65R110CFDFKSA1
    DISTI # 726-IPW65R110CFDFKSA    		Infineon Technologies AGMOSFET N-Ch 700V 31.2A TO247-3 CoolMOS CFD2
    RoHS: Compliant    		36
    • 1:$6.1900
    • 10:$5.2600
    • 100:$4.5600
    IPW65R110CFD
    DISTI # 726-IPW65R110CFD    		Infineon Technologies AGMOSFET N-Ch 700V 31.2A TO247-3 CoolMOS CFD2
    RoHS: Compliant    		0
    • 1:$6.1900
    • 10:$5.2600
    • 100:$4.5600
    IPW65R110CFDFKSA1
    DISTI # 8268241P    		Infineon Technologies AGMOSFET N-CH 650V 31A COOLMOS CFD2 TO247, TU42
    • 10:£4.7800
    • 20:£4.3900
    IPW65R110CFDFKSA1
    DISTI # IPW65R110CFDFKSA1    		Infineon Technologies AGTransistor: N-MOSFET,unipolar,650V,31.2A,277.8W,PG-TO247-385
    • 1:$7.8800
    • 3:$6.7800
    • 10:$5.4500
    • 30:$4.7300
    IPW65R110CFDFKSA1
    DISTI # 2443409    		Infineon Technologies AGMOSFET, N CH, 700V, 31.2A, TO-247-3
    RoHS: Compliant    		0
    • 1:$9.8000
    • 10:$8.3300
    • 100:$7.2200
    IPW65R110CFDFKSA1
    DISTI # 2443409    		Infineon Technologies AGMOSFET, N CH, 700V, 31.2A, TO-247-3
    RoHS: Compliant    		3
    • 1:£5.2100
    • 10:£3.9000
    • 100:£3.4800
    • 250:£3.3700
    • 500:£3.2600
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    유효성
    재고:
    244
    주문 시:
    2227
    수량 입력:
    IPW65R110CFDFKSA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$6.18
    US$6.18
    10
    US$5.25
    US$52.50
    100
    US$4.55
    US$455.00
    250
    US$4.32
    US$1 080.00
    500
    US$3.87
    US$1 935.00
    2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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