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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| SIE832DF-T1-GE3 DISTI # SIE832DF-T1-GE3CT-ND | Vishay Siliconix | MOSFET N-CH 40V 50A 10-POLARPAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 710In Stock |
|
| SIE832DF-T1-GE3 DISTI # SIE832DF-T1-GE3DKR-ND | Vishay Siliconix | MOSFET N-CH 40V 50A 10-POLARPAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 710In Stock |
|
| SIE832DF-T1-GE3 DISTI # SIE832DF-T1-GE3TR-ND | Vishay Siliconix | MOSFET N-CH 40V 50A 10-POLARPAK RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| SIE832DF-T1-GE3 DISTI # 781-SIE832DF-GE3 | Vishay Intertechnologies | MOSFET RECOMMENDED ALT 781-SIE818DF-GE3 RoHS: Compliant | 0 | |
| SIE832DFT1GE3 | Vishay Intertechnologies | Power Field-Effect Transistor, 23.6A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 3000 |
| 영상 | 부분 # | 설명 |
|---|---|---|
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Mfr.#: SIE832DF-T1-E3 OMO.#: OMO-SIE832DF-T1-E3 |
MOSFET RECOMMENDED ALT 781-SIE818DF-GE3 |
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Mfr.#: SIE832DF-T1-GE3 OMO.#: OMO-SIE832DF-T1-GE3 |
MOSFET RECOMMENDED ALT 781-SIE818DF-GE3 |
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Mfr.#: SIE832DF-T1-E3 OMO.#: OMO-SIE832DF-T1-E3-VISHAY |
RF Bipolar Transistors MOSFET 40V 50A 104W |
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Mfr.#: SIE832DF-T1-GE3 OMO.#: OMO-SIE832DF-T1-GE3-VISHAY |
RF Bipolar Transistors MOSFET 40V 103A 104W 5.5mohm @ 10V |
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Mfr.#: SIE832DF OMO.#: OMO-SIE832DF-1190 |
신규 및 오리지널 |
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Mfr.#: SIE832DFT1GE3 OMO.#: OMO-SIE832DFT1GE3-1190 |
Power Field-Effect Transistor, 23.6A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |