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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| FDD5N53TM_WS DISTI # FDD5N53TM_WS-ND | ON Semiconductor | MOSFET N-CH 530V 4A DPAK RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | Limited Supply - Call | |
| FDD5N53TM_WS DISTI # 512-FDD5N53TM-WS | ON Semiconductor | MOSFET N-Ch RoHS: Compliant | 0 |
| 영상 | 부분 # | 설명 |
|---|---|---|
|
Mfr.#: FDD5N50UTM-WS OMO.#: OMO-FDD5N50UTM-WS |
MOSFET UniFET 500V 3A |
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Mfr.#: FDD5N50FTM_WS OMO.#: OMO-FDD5N50FTM-WS-126 |
IGBT Transistors MOSFET UniFET 500V 3.5A |
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Mfr.#: FDD5N50FTM OMO.#: OMO-FDD5N50FTM-1190 |
Power Field-Effect Transistor, 3.5A I(D), 500V, 1.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA |
|
Mfr.#: FDD5N50FTM-WS |
MOSFET N-CH 500V 3.5A DPAK |
|
|
Mfr.#: FDD5N50NZFTM |
MOSFET N-CH 500V DPAK |
|
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Mfr.#: FDD5N50TM OMO.#: OMO-FDD5N50TM-1190 |
Power Field-Effect Transistor, 4A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA |
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Mfr.#: FDD5N50UTM OMO.#: OMO-FDD5N50UTM-1190 |
- Bulk (Alt: FDD5N50UTM) |
|
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Mfr.#: FDD5N53TM OMO.#: OMO-FDD5N53TM-1190 |
Power Field-Effect Transistor, 4A I(D), 530V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA |
|
|
Mfr.#: FDD5N50TM-WS |
MOSFET N-CH 500V 4A DPAK |
|
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Mfr.#: FDD5N50UTF_WS |
MOSFET N-CH 500V 3A DPAK |