IRFS7537TRLPBF

IRFS7537TRLPBF
Mfr. #:
IRFS7537TRLPBF
제조사:
Infineon Technologies
설명:
MOSFET MOSFET N CH 60V 173A D2PAK
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IRFS7537TRLPBF 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
IRFS7537TRLPBF 추가 정보
제품 속성
속성 값
제조사:
인피니언
제품 카테고리:
MOSFET
RoHS:
Y
기술:
장착 스타일:
SMD/SMT
패키지/케이스:
TO-252-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
60 V
Id - 연속 드레인 전류:
173 A
Rds On - 드레인 소스 저항:
3.3 mOhms
Vgs th - 게이트 소스 임계 전압:
3.7 V
Vgs - 게이트 소스 전압:
20 V
Qg - 게이트 차지:
142 nC
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 175 C
Pd - 전력 손실:
230 W
구성:
하나의
상표명:
강한IRFET
포장:
키:
2.3 mm
길이:
6.5 mm
트랜지스터 유형:
1 N-Channel
너비:
6.22 mm
상표:
인피니언 테크놀로지스
순방향 트랜스컨덕턴스 - 최소:
190 S
가을 시간:
84 ns
상품 유형:
MOSFET
상승 시간:
105 ns
공장 팩 수량:
800
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
82 ns
일반적인 켜기 지연 시간:
15 ns
부품 번호 별칭:
SP001565228
단위 무게:
0.139332 oz
Tags
IRFS7537, IRFS753, IRFS75, IRFS7, IRFS, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
IRFS7537PBF N-channel MOSFET Transistor; 173 A; 60 V; 3-Pin D2PAK
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ure Electronics
Single N-Channel 60 V 3.3 mOhm 142 nC HEXFET® Power Mosfet - D2PAK
***ical
Trans MOSFET N-CH 60V 173A 3-Pin(2+Tab) D2PAK Tube
*** Stop Electro
Power Field-Effect Transistor, 173A I(D), 60V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ineon
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability
***nell
MOSFET, N CH, 60V, 173A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 173A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.00275ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7V
***ical
Trans MOSFET N-CH 60V 174A 3-Pin(2+Tab) D2PAK Tube
***emi
N-Channel PowerTrench® MOSFET 60V, 174A, 3.9mΩ
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ure Electronics
Single N-Channel 60 V 2.4 mOhm 186 nC HEXFET® Power Mosfet - D2PAK
***ical
Trans MOSFET N-CH Si 60V 232A 3-Pin(2+Tab) D2PAK Tube
***(Formerly Allied Electronics)
MOSFET, 60V,195A, 2.4mOhm, 186nC, D2PAK
*** Stop Electro
Power Field-Effect Transistor, 195A I(D), 60V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ineon
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability
***(Formerly Allied Electronics)
IRFS7730PBF N-channel MOSFET Transistor; 246 A; 75 V; 3-Pin D2PAK
***ineon SCT
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ure Electronics
Single N-Channel 75 V 2.6 mOhm 271 nC HEXFET® Power Mosfet - D2PAK
***ical
Trans MOSFET N-CH Si 75V 246A 3-Pin(2+Tab) D2PAK Tube
***nell
MOSFET, N-CH, 75V, 195A, TO-263AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 246A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0022ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7
***ineon
Benefits: Improved gate, avalanche and dynamic dV/dt ruggedness; Fully characterized capacitance and avalanche SOA; Enhanced body diode dV/dt and dI/dt capability; Lead-free, RoHS compliant; StrongIRFET
***emi
N-Channel Power MOSFET, 60V, 170A, 3.3mΩ, TO-263.
***et
Trans MOSFET N-CH 60V 170A 3-Pin TO-263 T/R
***or
MOSFET N-CH 60V 170A D2PAK
***r Electronics
Power Field-Effect Transistor
***el Electronic
RES SMD 324 OHM 1% 1W 2512
***ark
REEL / NCH 170A 60V TO263
***r Electronics
Power Field-Effect Transistor, 180A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ical
Trans MOSFET N-CH 60V 180A Automotive 3-Pin(2+Tab) H2PAK T/R
***icroelectronics
Automotive-grade N-channel 60 V, 1.6 mOhm typ., 180 A STripFET F6 Power MOSFET in H2PAK-2 package
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
StrongIRFET™ Power MOSFETs
Infineon StrongIRFET™ Power MOSFET family are optimized for low RDS(on) and high current capability. These devices are ideal for low-frequency applications requiring performance and ruggedness. These MOSFETs have the highest current carrying capability in the industry. This feature leads to increased robustness and reliability for high power density applications which require high efficiency and reliability. 
부분 # 제조 설명 재고 가격
IRFS7537TRLPBF
DISTI # V72:2272_13891331
Infineon Technologies AGTrans MOSFET N-CH 60V 173A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
800
  • 75000:$1.0662
  • 30000:$1.0681
  • 15000:$1.0699
  • 6000:$1.0718
  • 3000:$1.0737
  • 1000:$1.0754
  • 500:$1.2544
  • 250:$1.3904
  • 100:$1.3947
  • 50:$1.6177
  • 25:$1.6597
  • 10:$1.6666
  • 1:$1.8814
IRFS7537TRLPBF
DISTI # IRFS7537TRLPBFCT-ND
Infineon Technologies AGMOSFET N CH 60V 173A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
775In Stock
  • 100:$2.2303
  • 10:$2.7370
  • 1:$3.0100
IRFS7537TRLPBF
DISTI # IRFS7537TRLPBFDKR-ND
Infineon Technologies AGMOSFET N CH 60V 173A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
775In Stock
  • 100:$2.2303
  • 10:$2.7370
  • 1:$3.0100
IRFS7537TRLPBF
DISTI # IRFS7537TRLPBFTR-ND
Infineon Technologies AGMOSFET N CH 60V 173A D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 800:$1.5665
IRFS7537TRLPBF
DISTI # 31075154
Infineon Technologies AGTrans MOSFET N-CH 60V 173A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
800
  • 500:$1.2544
  • 250:$1.3904
  • 100:$1.3947
  • 50:$1.6177
  • 25:$1.6597
  • 10:$1.6666
  • 8:$1.8814
IRFS7537TRLPBF
DISTI # IRFS7537TRLPBF
Infineon Technologies AGTrans MOSFET N-CH 60V 173A 3-Pin D2PAK T/R - Tape and Reel (Alt: IRFS7537TRLPBF)
RoHS: Compliant
Min Qty: 800
Container: Reel
Americas - 0
  • 800:$0.9359
  • 1600:$0.9019
  • 3200:$0.8699
  • 4800:$0.8399
  • 8000:$0.8249
IRFS7537TRLPBF
DISTI # SP001565228
Infineon Technologies AGTrans MOSFET N-CH 60V 173A 3-Pin D2PAK T/R (Alt: SP001565228)
RoHS: Compliant
Min Qty: 800
Container: Tape and Reel
Europe - 0
  • 800:€1.1699
  • 1600:€0.9749
  • 3200:€0.8999
  • 4800:€0.8349
  • 8000:€0.7799
IRFS7537TRLPBF
DISTI # 942-IRFS7537TRLPBF
Infineon Technologies AGMOSFET MOSFET N CH 60V 173A D2PAK
RoHS: Compliant
849
  • 1:$2.4000
  • 10:$2.0400
  • 100:$1.6300
  • 500:$1.4300
  • 800:$1.1800
IRFS7537TRLPBF
DISTI # IRFS7537PBF-GURT
Infineon Technologies AGN-Ch 60V 173A 230W 0,0033R DPak
RoHS: Compliant
0
  • 10:€1.3900
  • 50:€1.0900
  • 200:€0.9920
  • 500:€0.9550
IRFS7537TRLPBF
DISTI # 2781141
Infineon Technologies AGMOSFET, N-CH, 60V, 173A, TO-263AB
RoHS: Compliant
94
  • 1:£2.0600
  • 10:£1.5400
  • 100:£1.2400
  • 250:£1.0700
  • 500:£0.8900
IRFS7537TRLPBF
DISTI # 2781141
Infineon Technologies AGMOSFET, N-CH, 60V, 173A, TO-263AB
RoHS: Compliant
94
  • 1:$2.7400
  • 10:$2.5600
  • 100:$2.2700
  • 250:$2.1400
  • 500:$2.0300
  • 1000:$1.9300
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OMO.#: OMO-505431-1000-1190

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OMO.#: OMO-STM32F767ZIT6-STMICROELECTRONICS

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OMO.#: OMO-LAN8710A-EZC-ABC-MICROCHIP-TECHNOLOGY

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유효성
재고:
846
주문 시:
2829
수량 입력:
IRFS7537TRLPBF의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$2.39
US$2.39
10
US$2.03
US$20.30
100
US$1.62
US$162.00
500
US$1.42
US$710.00
2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
시작
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