S25FL512SAGBHA213

S25FL512SAGBHA213
Mfr. #:
S25FL512SAGBHA213
제조사:
Cypress Semiconductor
설명:
NOR Flash IC 512 Mb FLASH MEMORY
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
S25FL512SAGBHA213 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
S25FL512SAGBHA213 추가 정보 S25FL512SAGBHA213 Product Details
제품 속성
속성 값
제조사:
사이프러스 반도체
제품 카테고리:
NOR 플래시
RoHS:
Y
시리즈:
S25FL512S
자격:
AEC-Q100
포장:
메모리 유형:
도 아니다
상표:
사이프러스 반도체
습기에 민감한:
상품 유형:
NOR 플래시
공장 팩 수량:
2500
하위 카테고리:
메모리 및 데이터 저장
상표명:
미러비트
Tags
S25FL512SAGBHA, S25FL512SAGBH, S25FL512SAGB, S25FL512SAG, S25FL512SA, S25FL512S, S25FL5, S25FL, S25F, S25
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
IC 512 MB FLASH MEMORY
S25FL512S FL-S NOR Flash Memory Devices
Cypress S25FL512S FL-S NOR Flash Memory Devices are VIO VCC 2.7V to 3.6V flash non-volatile memory devices. These devices use 65nm MirrorBit technology. Designed using Eclipse™ architecture with a 512-byte page programming buffer. The 512-Mb S25FL512S FL-S NOR allows users to program up to 256 words (512 bytes) in one operation. This results in faster effective programming and erase than prior generation SPI program or erase algorithms. The device connects to a host system via an SPI and supports traditional SPI single bit serial input and output. Optional two bit (Dual I/O or DIO), and four bit (Quad I/O or QIO) serial commands. The S25FL512S FL-S NOR provides support for Double Data Rate read commands for SIO, DIO, and QIO that transfer address. The S25FL512S FL-S transfer address and read data on both edges of the clock. By using FL-S devices at the supported higher clock rates with QIO or DDR-QIO commands, the read transfer rate instruction can match traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. S25FL512S FL-S NOR offers high-density performance capabilities coupled with the flexibility and speed required by a variety of embedded applications. The S25FL512S FL-S NOR is ideal for code shadowing, XIP, and data storage.
부분 # 제조 설명 재고 가격
S25FL512SAGBHA213
DISTI # S25FL512SAGBHA213-ND
Cypress SemiconductorIC 512 MB FLASH MEMORY
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 2500:$6.3854
S25FL512SAGBHA213
DISTI # 47AC6129
Cypress SemiconductorS25FL512SAGBHA2130
  • 1500:$5.5500
  • 1000:$5.8300
  • 500:$6.2000
  • 250:$6.3900
  • 1:$6.5300
S25FL512SAGBHA213
DISTI # 727-S25FL512SAGBHA23
Cypress SemiconductorNOR Flash IC 512 Mb FLASH MEMORY
RoHS: Compliant
0
  • 2500:$6.0600
영상 부분 # 설명
S25FL512SAGMFIR13

Mfr.#: S25FL512SAGMFIR13

OMO.#: OMO-S25FL512SAGMFIR13

NOR Flash 512Mb, 3V, 133Mhz SPI NOR Flash
S25FL512SAGMFI010

Mfr.#: S25FL512SAGMFI010

OMO.#: OMO-S25FL512SAGMFI010

NOR Flash 512Mb 3V 133MHz Serial NOR Flash
S25FL512SAGMFMG13

Mfr.#: S25FL512SAGMFMG13

OMO.#: OMO-S25FL512SAGMFMG13

NOR Flash Nor
S25FL512SAGBHI313

Mfr.#: S25FL512SAGBHI313

OMO.#: OMO-S25FL512SAGBHI313

NOR Flash 512Mb 3V 133MHz Serial NOR Flash
S25FL512SAG-HEA13

Mfr.#: S25FL512SAG-HEA13

OMO.#: OMO-S25FL512SAG-HEA13

NOR Flash
S25FL512SAGBHAC13

Mfr.#: S25FL512SAGBHAC13

OMO.#: OMO-S25FL512SAGBHAC13-CYPRESS-SEMICONDUCTOR

IC NOR Automotive, AEC-Q100, FL-S
S25FL512SAGMFAG13

Mfr.#: S25FL512SAGMFAG13

OMO.#: OMO-S25FL512SAGMFAG13-CYPRESS-SEMICONDUCTOR

IC 512 MB FLASH MEMORY
S25FL512SAGMFV010

Mfr.#: S25FL512SAGMFV010

OMO.#: OMO-S25FL512SAGMFV010-CYPRESS-SEMICONDUCTOR

Flash Memory 512-MBIT CMOS 3.0 VOLT 65NM FLASH MEMORY WITH 133-MHZ SPI (SERIAL PERIPHERAL INTERFACE) AND MULTI I/O BUS - 256KB, SO3016 IN TRAY PACKING
S25FL512SDPBHI210

Mfr.#: S25FL512SDPBHI210

OMO.#: OMO-S25FL512SDPBHI210-CYPRESS-SEMICONDUCTOR

IC FLASH 512M SPI 66MHZ 24BGA FL-S
S25FL512SAGBHI210

Mfr.#: S25FL512SAGBHI210

OMO.#: OMO-S25FL512SAGBHI210-CYPRESS-SEMICONDUCTOR

IC FLASH 512M SPI 133MHZ 24BGA FL-S
유효성
재고:
Available
주문 시:
4500
수량 입력:
S25FL512SAGBHA213의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
최신 제품
  • LB Series Inductors
    TAIYO YUDEN's LB series inductors have expanded to include price competitive, AEC-Q200 qualified high-reliability version inductors.
  • BRL3225 Series
    TAIYO YUDEN's wire wound chip inductors are designed to save space and provide optimal inductance and DC resistance values.
  • VF3 Hall Effect Sensor ICs
    Honeywell is pleased to announce its high sensitivity latching sensor ICs, VF360NT, VF360ST, that are AEC-Q100 qualified for use in the transportation industry. AEC-Q100 qualification provides enh
  • PLT Series Pulse Transformers
    KEMET's PLT pulse transformers are designed with a proprietary ferrite core and show excellent insertion loss characteristics.
  • Compare S25FL512SAGBHA213
    S25FL512SAGBHA210 vs S25FL512SAGBHA213 vs S25FL512SAGBHAC10
  • MICRO SWITCH™ V7 Series
    Honeywell's V7 switch is available as a pin plunger style or with optional integral or auxiliary levers to actuate the switch and offer versatility in the application.
Top