FDG313N

Mfr. #:: FDG313N
제조사:: ON Semiconductor / Fairchild
설명:: MOSFET SC70-6 N-CH 25V
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: FDG313N 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

제품 속성
속성 값

제조사:: 온세미컨덕터

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: SOT-323-6

채널 수:: 1 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 25 V

Id - 연속 드레인 전류:: 950 mA

Rds On - 드레인 소스 저항:: 350 mOhms

Vgs - 게이트 소스 전압:: 8 V

최소 작동 온도:: - 55 C

최대 작동 온도:: + 150 C

Pd - 전력 손실:: 750 mW

구성:: 하나의

채널 모드:: 상승

포장:: 릴

키:: 1.1 mm

길이:: 2 mm

제품:: MOSFET 소신호

시리즈:: FDG313N

트랜지스터 유형:: 1 N-Channel

유형:: FET

너비:: 1.25 mm

상표:: 온세미컨덕터 / 페어차일드

순방향 트랜스컨덕턴스 - 최소:: 1.5 S

가을 시간:: 8.5 ns

상품 유형:: MOSFET

상승 시간:: 8.5 ns

공장 팩 수량:: 3000

하위 카테고리:: MOSFET

일반적인 끄기 지연 시간:: 17 ns

일반적인 켜기 지연 시간:: 3 ns

부품 번호 별칭:: FDG313N_NL

단위 무게:: 0.000988 oz

Tags: FDG313, FDG31, FDG3, FDG

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We provide 90-360 days warranty.

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDG313N 설명

***ure Electronics: N-Channel 25 V 450 mOhm Surface Mount Digital FET Mosfet - SC-70-6

*** Electronics: FAIRCHILD SEMICONDUCTOR FDG313N MOSFET Transistor, N Channel, 950 mA, 25 V, 450 mohm, 4.5 V, 800 mV

***ment14 APAC: MOSFET, N, SMD, 6-SC-70; Transistor Polarity:N Channel; Continuous Drain Current Id:950mA; Drain Source Voltage Vds:25V; On Resistance Rds(on):450mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:800mV; Power Dissipation Pd:750mW; Transistor Case Style:SC-70; No. of Pins:6; SVHC:No SVHC (19-Dec-2011); Current Id Max:950mA; Package / Case:SC-70; Power Dissipation Pd:750mW; Termination Type:SMD; Voltage Vds Typ:25V; Voltage Vgs Max:800mV; Voltage Vgs Rds on Measurement:4.5V

***rchild Semiconductor: This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistor and small signal MOSFET.

***ser: MOSFETs- Power and Small Signal 25V 1.2A N-Channel No-Cancel/No-Return

***ponent Stockers USA: 1000 mA 25 V N-CHANNEL Si SMALL SIGNAL MOSFET

***r Electronics: Small Signal Field-Effect Transistor, 1A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***or: MOSFET N-CH 25V 1A SC88/SC70-6

***r Electronics: Small Signal Field-Effect Transistor, 1A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***ser: MOSFETs- Power and Small Signal 25V 1.2A N-Channel

***or: MOSFET N-CH 25V 1A SC88/SC70-6

***emi: P-Channel PowerTrench® MOSFET, 2.5V Specified, -1.2 A, 180 mΩ

***ment14 APAC: MOSFET, P; Transistor Polarity:P Channel; Continuous Drain Current Id:1.2A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):187mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:900mV; Power Dissipation Pd:750mW; Transistor Case Style:SC-70; No. of Pins:6; SVHC:No SVHC (19-Dec-2011); Current Id Max:1.2A; Package / Case:SC70; Power Dissipation Pd:750mW; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:-900mV; Voltage Vgs Rds on Measurement:8V

***rchild Semiconductor: This P-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications.

***ark: MOSFET, N CH, 20V, 0.29OHM, 970mA, SOT-416-3; Transistor Polarity:N Channel; Con

***ure Electronics: N-Channel 20 V 350 mOhm 0.72 nC SMT TrenchMOS Low Level FET - SC-75

***ical: Trans MOSFET N-CH 20V 0.97A 3-Pin SC-75 T/R

***ponent Stockers USA: 970 mA 20 V N-CHANNEL Si SMALL SIGNAL MOSFET

***peria: N-channel TrenchMOS extremely low level FET

***ure Electronics: Single N-Channel 20 V 0.25 Ohm 500 mW Silicon Surface Mount Mosfet - SOT-23

***ical: Trans MOSFET N-CH 20V 1.2A Automotive 3-Pin SC-59 T/R

***ser: Transistor - FET N-Channel 20V 1.2A

***des Inc SCT: N-Channel Mosfet, 20V VDS, 8±V VGS

***ark: Mosfet Bvdss: 8V~24V Sc59 T&r 3K

***(Formerly Allied Electronics): N-Channel Enhancement Mode FET SC-59

***ment14 APAC: MOSFET, N CH, 20V, 1.2A, SC-59; Transistor Polarity:N Channel; Continuous Drain Current Id:1.2A; Drain Source Voltage Vds:20V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.2V; Power Dissipation Pd:500mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SC-59; No. of Pins:3; Current Id Max:4A; Package / Case:SC-59; Power Dissipation Pd:500mW; Termination Type:SMD; Transistor Type:Enhancement; Voltage Vds Typ:20V; Voltage Vgs Max:8V; Voltage Vgs Rds on Measurement:4.5V

***el Electronic: DIODES INC. - DMN100-7-F - MOSFET Transistor, N Channel, 1.1 A, 30 V, 0.24 ohm, 10 V, 3 V

***nell: MOSFET, N CH, 30V, 1.1A, SC-59; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.1A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.24ohm; Rd; Available until stocks are exhausted Alternative available

***ark: MOSFET, N CHANNEL, 30V, 1.1A, SC-59; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:1.1A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

Market price

부분 #	제조	설명	재고	가격
FDG313N DISTI # FDG313NFSTR-ND	ON Semiconductor	MOSFET N-CH 25V 0.95A SC70-6 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Limited Supply - Call
FDG313N DISTI # FDG313NFSCT-ND	ON Semiconductor	MOSFET N-CH 25V 0.95A SC70-6 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
FDG313N DISTI # FDG313NFSDKR-ND	ON Semiconductor	MOSFET N-CH 25V 0.95A SC70-6 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
FDG313N_D87Z DISTI # FDG313N_D87Z-ND	ON Semiconductor	MOSFET N-CH 25V 0.95A SC70-6 RoHS: Compliant Min Qty: 10000 Container: Tape & Reel (TR)	Limited Supply - Call
FDG313N DISTI # FDG313N	ON Semiconductor	Trans MOSFET N-CH 25V 0.95A 6-Pin SC-70 T/R - Bulk (Alt: FDG313N) RoHS: Compliant Min Qty: 1087 Container: Bulk	Americas - 0	10870:$0.2829 5435:$0.2909 3261:$0.2939 2174:$0.2979 1087:$0.2999
FDG313N DISTI # 512-FDG313N	ON Semiconductor	MOSFET SC70-6 N-CH 25V RoHS: Compliant	0
FDG313N_D87Z DISTI # 512-FDG313N_D87Z	ON Semiconductor	MOSFET SC70-6 N-CH 25V RoHS: Compliant	0
FDG313N	Fairchild Semiconductor Corporation	Small Signal Field-Effect Transistor, 0.95A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	1655418	1000:$0.3000 500:$0.3200 100:$0.3300 25:$0.3500 1:$0.3700
FDG313N	Fairchild Semiconductor Corporation	950 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET	3000	1112:$0.1400 223:$0.1800 1:$0.4000
FDG313N DISTI # 8063371P	ON Semiconductor	MOSFETFAIRCHILDFDG313N, RL	260	200:£0.1280
FDG313N	Fairchild Semiconductor Corporation		5521
FDG313N	Fairchild Semiconductor Corporation		5609
FDG313N	Fairchild Semiconductor Corporation		2617
FDG313N DISTI # 1471044	ON Semiconductor	MOSFET, N, SMD, 6-SC-70 RoHS: Compliant	1	500:£0.2010 250:£0.2200 100:£0.2390 10:£0.4130 1:£0.5120
FDG313N DISTI # 1471044RL	ON Semiconductor	MOSFET, N, SMD, 6-SC-70 RoHS: Compliant	0	1:$1.1100
FDG313N DISTI # 1471044	ON Semiconductor	MOSFET, N, SMD, 6-SC-70 RoHS: Compliant	0	1:$1.1100

영상	부분 #	설명
	Mfr.#: FDG.1B.307.CLAD42 OMO.#: OMO-FDG-1B-307-CLAD42-LEMO	Circular Push Pull Connectors STRAIGHT PLUG LONG VERSION
	Mfr.#: FDG316P OMO.#: OMO-FDG316P-ON-SEMICONDUCTOR	MOSFET P-CH 30V 1.6A SC70-6
	Mfr.#: FDG6304P-LF OMO.#: OMO-FDG6304P-LF-1190	신규 및 오리지널
	Mfr.#: FDG6318PZ OMO.#: OMO-FDG6318PZ-ON-SEMICONDUCTOR	MOSFET 2P-CH 20V 0.5A SC70-6
	Mfr.#: FDG6318PZ-NL OMO.#: OMO-FDG6318PZ-NL-1190	신규 및 오리지널
	Mfr.#: FDG6321C-NL OMO.#: OMO-FDG6321C-NL-1190	신규 및 오리지널
	Mfr.#: FDG6342L-NL OMO.#: OMO-FDG6342L-NL-1190	신규 및 오리지널
	Mfr.#: FDGB0037A OMO.#: OMO-FDGB0037A-1190	신규 및 오리지널
	Mfr.#: FDG6301N-CUT TAPE OMO.#: OMO-FDG6301N-CUT-TAPE-1190	신규 및 오리지널
	Mfr.#: FDG6321C-CUT TAPE OMO.#: OMO-FDG6321C-CUT-TAPE-1190	신규 및 오리지널

FDG313N

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes