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IRF7907PBF

IRF7907PBF
Mfr. #:
IRF7907PBF
제조사:
Infineon Technologies
설명:
MOSFET 2N-CH 30V 9.1A/11A 8SOIC
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IRF7907PBF 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF7907PBF DatasheetIRF7907PBF Datasheet (P4-P6)IRF7907PBF Datasheet (P7-P9)IRF7907PBF Datasheet (P10)
ECAD Model:
제품 속성
속성 값
제조사
인피니언 테크놀로지스
제품 카테고리
FET - 어레이
시리즈
헥스펫
포장
튜브 대체 포장
단위 무게
0.019048 oz
장착 스타일
SMD/SMT
패키지 케이스
8-SOIC (0.154", 3.90mm Width)
기술
시
작동 온도
-55°C ~ 150°C (TJ)
장착형
표면 실장
채널 수
2 Channel
공급자-장치-패키지
8-SO
구성
듀얼
FET형
2 N-Channel (Dual)
파워맥스
2W
트랜지스터형
2 N-Channel
드레인-소스 전압 Vdss
30V
입력-커패시턴스-Ciss-Vds
850pF @ 15V
FET 기능
로직 레벨 게이트
Current-Continuous-Drain-Id-25°C
9.1A, 11A
Rds-On-Max-Id-Vgs
16.4 mOhm @ 9.1A, 10V
Vgs-th-Max-Id
2.35V @ 25μA
Gate-Charge-Qg-Vgs
10nC @ 4.5V
Pd 전력 손실
2.0 W
최대 작동 온도
+ 150 C
최소 작동 온도
- 55 C
가을철
3.4 ns 5.3 ns
상승 시간
9.3 ns 14 ns
Vgs 게이트 소스 전압
20 V
Id-연속-드레인-전류
9.1 A
Vds-드레인-소스-고장-전압
30 V
Rds-On-Drain-Source-Resistance
20.5 mOhms
트랜지스터 극성
N-채널
일반 꺼짐 지연 시간
8 ns 13 ns
일반 켜기 지연 시간
6 ns 8 ns
Qg-Gate-Charge
6.7 nC
채널 모드
상승
Tags
IRF7907, IRF790, IRF79, IRF7, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET, Power;N-Ch;VDSS 30V;ID 9.1 A (Control FET), 11 A (Synchronous FET);SO-8
***ernational Rectifier
30V Dual N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package
***p One Stop Japan
Trans MOSFET N-CH 30V 9.1A/11A 8-Pin SOIC Tube
***ical
Trans MOSFET N-CH 30V 9.1A/11A 8-Pin SOIC T/R
***Components
MOSFET N-Channel 30V 9.1A/11A SOIC8
***i-Key
MOSFET N-CHAN DUAL 30V 8-SOIC
***ronik
2N-CH 30V 9,1A 11,8mOhm SO8 RoHSconf
***ineon
Benefits: RoHS Compliant; Low RDS(on); Low Thermal resistance to PCB; Compatible with Existing Surface Mount Techniques; Low RDS(ON) at 4.5V VGS; Very Low Gate Charge; Dual N-Channel MOSFET
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:11A; On Resistance, Rds(on):11.8mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:SO-8 ;RoHS Compliant: Yes
***nell
MOSFET, NN; Transistor Type:MOSFET; Transistor Polarity:Dual N; Voltage, Vds Typ:30V; Current, Id Cont:11A; Resistance, Rds On:11.8mohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.8V; Case Style:SOIC; Termination Type:SMD; Current, Id Cont N Channel 2:9.1A; Current, Id Cont N Channel 3:11A; Resistance, Rds on N Channel 1:13.7ohm; Resistance, Rds on N Channel 2:9.8ohm
***ment14 APAC
MOSFET,NN CH,30V,9.1A,SO8; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:11A; Drain Source Voltage Vds:30V; Module Configuration:Dual; On Resistance Rds(on):9.8mohm; Power Dissipation Pd:2W
부분 # 제조 설명 재고 가격
IRF7907PBF
DISTI # IRF7907PBF-ND		Infineon Technologies AGMOSFET 2N-CH 30V 9.1A/11A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Tube		Limited Supply - Call
    IRF7907PBF
    DISTI # 70017286    		Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 30V,ID 9.1 A (Control FET),11 A (Synchronous FET),SO-8
    RoHS: Compliant    		0
    • 3800:$1.3400
    • 7600:$1.3130
    • 19000:$1.2730
    • 38000:$1.2190
    • 95000:$1.1390
    IRF7907PBF
    DISTI # 942-IRF7907PBF    		Infineon Technologies AGMOSFET 30V DUAL N-CH HEXFET 20V VGS MAX
    RoHS: Compliant    		0
      IRF7907PBFInternational Rectifier 2849
        IRF7907PBF
        DISTI # 1843031        		Infineon Technologies AGMOSFET,NN CH,30V,9.1A,SO8
        RoHS: Compliant        		0
        • 1:$1.7200
        • 10:$1.5300
        • 100:$1.1900
        • 500:$0.9820
        • 1000:$0.7760
        영상 부분 # 설명
        IRF7904TRPBF

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        Mfr.#: IRF7901D1TR

        OMO.#: OMO-IRF7901D1TR-INFINEON-TECHNOLOGIES

        		 MOSFET 2N-CH 30V 6.2A 8SOIC
        IRF7902TRPBF 28K

        Mfr.#: IRF7902TRPBF 28K

        OMO.#: OMO-IRF7902TRPBF-28K-1190

        		 신규 및 오리지널
        IRF7904TRPBF-1

        Mfr.#: IRF7904TRPBF-1

        OMO.#: OMO-IRF7904TRPBF-1-1190

        		 MOSFET 2N-CH 30V 7.6A/11A 8-SOIC
        IRF7907PBF

        Mfr.#: IRF7907PBF

        OMO.#: OMO-IRF7907PBF-INFINEON-TECHNOLOGIES

        		 MOSFET 2N-CH 30V 9.1A/11A 8SOIC
        IRF7907PBF-1

        Mfr.#: IRF7907PBF-1

        OMO.#: OMO-IRF7907PBF-1-1190

        		 신규 및 오리지널
        IRF7907TRPBF

        Mfr.#: IRF7907TRPBF

        OMO.#: OMO-IRF7907TRPBF-INFINEON-TECHNOLOGIES

        		 MOSFET 2N-CH 30V 9.1A/11A 8-SOIC
        IRF7902TRPBF

        Mfr.#: IRF7902TRPBF

        OMO.#: OMO-IRF7902TRPBF-INFINEON-TECHNOLOGIES

        		 RF Bipolar Transistors MOSFET MOSFT DUAL NCh 30V 9.7A
        유효성
        재고:
        Available
        주문 시:
        2500
        수량 입력:
        IRF7907PBF의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
        참고 가격(USD)
        수량
        단가
        내선 가격
        1
        US$1.71
        US$1.71
        10
        US$1.62
        US$16.23
        100
        US$1.54
        US$153.77
        500
        US$1.45
        US$726.10
        1000
        US$1.37
        US$1 366.80
        시작
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