NUS5530MNR2G

Mfr. #:: NUS5530MNR2G
제조사:: ON Semiconductor
설명:: MOSFET INTEGRATED POWER BJT
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: NUS5530MNR2G 데이터 시트
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HTML Datasheet:: NUS5530MNR2G Datasheet NUS5530MNR2G Datasheet (P4-P6)NUS5530MNR2G Datasheet (P7-P9)
ECAD Model:

제품 속성
속성 값

제조사:: 온세미컨덕터

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: DFN-8

트랜지스터 극성:: P-채널

Vds - 드레인 소스 항복 전압:: 20 V

Id - 연속 드레인 전류:: 3.9 A

Rds On - 드레인 소스 저항:: 200 Ohms

Vgs - 게이트 소스 전압:: 35 V

Pd - 전력 손실:: 635 mW

포장:: 릴

제품:: MOSFET 소신호

시리즈:: NUS5530MN

상표:: 온세미컨덕터

순방향 트랜스컨덕턴스 - 최소:: 12 S

상품 유형:: MOSFET

공장 팩 수량:: 3000

하위 카테고리:: MOSFET

단위 무게:: 0.001319 oz

Tags: NUS5, NUS

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

NUS5530MNR2G 설명

***ied Electronics & Automation: ON Semi NUS5530MNR2G Dual PNP Bipolar Transistor; 2 A; 35 V; 8-Pin DFN

***th Star Micro: NUS5530MN: Integrated Power MOSFET 20V 3.9A 60 mOhm Dual P-Channel with PNP Low VCE Switching Transistor DFN8

***ark: Transistor,mos-Bjt Power Module,independent,35V V(Br)Ceo,2A I(C)

***et: Integrated Power MOSFET with PNP 8-Pin DFN EP T/R

***ser: Transistors Bipolar- Bias Resistor INTEGRATED POWER BJT

***i-Key: IC MOSFET W/PNP SW TRANS 8-DFN

Market price

부분 #	제조	설명	재고	가격
NUS5530MNR2G DISTI # V36:1790_07283721	ON Semiconductor	Integrated Power MOSFET with PNP 8-Pin DFN EP T/R RoHS: Compliant	0
NUS5530MNR2G DISTI # NUS5530MNR2GOSTR-ND	ON Semiconductor	IC MOSFET W/PNP SW TRANS 8-DFN RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	3000:$0.6031
NUS5530MNR2G DISTI # NUS5530MNR2G	ON Semiconductor	Integrated Power MOSFET with PNP 8-Pin DFN EP T/R - Tape and Reel (Alt: NUS5530MNR2G) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.4829 6000:$0.4799 12000:$0.4739 18000:$0.4679 30000:$0.4559
NUS5530MNR2G DISTI # NUS5530MNR2G	ON Semiconductor	Integrated Power MOSFET with PNP 8-Pin DFN EP T/R - Bulk (Alt: NUS5530MNR2G) RoHS: Compliant Min Qty: 610 Container: Bulk	Americas - 0	610:$0.5349 612:$0.5319 1222:$0.5249 3050:$0.5179 6100:$0.5059
NUS5530MNR2G DISTI # 70465550	ON Semiconductor	ON Semi NUS5530MNR2G Dual PNP Bipolar Transistor,2 A,35 V,8-Pin DFN RoHS: Compliant	0	20:$0.5300 50:$0.5200 100:$0.5100 500:$0.5000
NUS5530MNR2G DISTI # 863-NUS5530MNR2G	ON Semiconductor	MOSFET INTEGRATED POWER BJT RoHS: Compliant	0	3000:$0.4930 9000:$0.4740
NUS5530MNR2G	ON Semiconductor	Power Field-Effect Transistor, 3.9A I(D), 20V, 0.083ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	105255	1000:$0.5400 500:$0.5700 100:$0.5900 25:$0.6200 1:$0.6600
NUS5530MNR2G	ON Semiconductor		1780

영상	부분 #	설명
	Mfr.#: NUS5530MNR2G OMO.#: OMO-NUS5530MNR2G	MOSFET INTEGRATED POWER BJT
	Mfr.#: NUS5530MN OMO.#: OMO-NUS5530MN-1190	신규 및 오리지널
	Mfr.#: NUS5531MTR2G OMO.#: OMO-NUS5531MTR2G-ON-SEMICONDUCTOR	MOSFET/BJT SGL P-CH 12V 8-WDFN
	Mfr.#: NUS5530MNR2G OMO.#: OMO-NUS5530MNR2G-ON-SEMICONDUCTOR	IGBT Transistors MOSFET INTEGRATED POWER BJT

NUS5530MNR2G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes