SIR882DP-T1-GE3

SIR882DP-T1-GE3
Mfr. #:
SIR882DP-T1-GE3
제조사:
Vishay
설명:
MOSFET N-CH 100V 60A PPAK SO-8
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
SIR882DP-T1-GE3 데이터 시트
배달:
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지불:
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ECAD Model:
추가 정보:
SIR882DP-T1-GE3 추가 정보
제품 속성
속성 값
Tags
SIR882DP-T, SIR882D, SIR882, SIR88, SIR8, SIR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
SiR882DP Series 100 V 8.7 mOhm SMT N-Channel Mosfet - PowerPAK® SO-8
***et Europe
Trans MOSFET N-CH 100V 17.6A 8-Pin PowerPAK SO T/R
***i-Key
MOSFET N-CH 100V 60A PPAK SO-8
***
N-CHANNEL 100-V (D-S)
***ark
MOSFET,N CH,DIODE,100V,60A,PPAKSO8; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; On Resistance Rds(on):7100µohm; Rds(on) Test Voltage Vgs:10V; Operating Temperature Range:-55°C to +150°C; Transistor Case ;RoHS Compliant: Yes
***nell
MOSFET,N CH,DIODE,100V,60A,PPAKSO8; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; On State Resistance:7100µohm; Rds(on) Test Voltage Vgs:10V; Voltage Vgs Max:20V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC PowerPAK; No. of Pins:8; Current Id Max:17.6A; Power Dissipation:5.4W
***ment14 APAC
MOSFET,N CH,DIODE,100V,60A,PPAKSO8; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:100V; On Resistance Rds(on):7100µohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:5.4W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:17.6A; Power Dissipation Pd:5.4W; Voltage Vgs Max:20V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
ThunderFET® Power MOSFETs
Vishay Siliconix ThunderFET® Power MOSFETs offer the lowest values of on-resistance in the industry for 100V MOSFETs with 4.5V ratings. In addition to the product of on-resistance and gate charge - a key figure-of-merit (FOM) for MOSFETs in DC-DC Converter applications is also best in class. For designers, the lower on-resistance translates into lower conduction losses and reduced power consumption for energy-saving green solutions. These devices are optimized for primary side switching and secondary side synchronous rectification in isolated DC/DC power supply designs for telecom brick and bus converter applications. The MOSFETs' 4.5 V rating for on-resistance allows a wide range of PWM and gate driver ICs to be considered.
부분 # 제조 설명 재고 가격
SIR882DP-T1-GE3
DISTI # V72:2272_09216058
Vishay IntertechnologiesTrans MOSFET N-CH 100V 17.6A 8-Pin PowerPAK SO T/R
RoHS: Compliant
1
  • 1:$2.7472
SIR882DP-T1-GE3
DISTI # V36:1790_09216058
Vishay IntertechnologiesTrans MOSFET N-CH 100V 17.6A 8-Pin PowerPAK SO T/R
RoHS: Compliant
0
  • 3000000:$1.1040
  • 1500000:$1.1050
  • 300000:$1.1230
  • 30000:$1.1450
  • 3000:$1.1480
SIR882DP-T1-GE3
DISTI # SIR882DP-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CH 100V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
On Order
  • 6000:$1.1057
  • 3000:$1.1482
SIR882DP-T1-GE3
DISTI # SIR882DP-T1-GE3CT-ND
Vishay SiliconixMOSFET N-CH 100V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Temporarily Out of Stock
  • 1000:$1.2702
  • 500:$1.5330
  • 100:$1.8659
  • 10:$2.3210
  • 1:$2.5800
SIR882DP-T1-GE3
DISTI # SIR882DP-T1-GE3DKR-ND
Vishay SiliconixMOSFET N-CH 100V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Temporarily Out of Stock
  • 1000:$1.2702
  • 500:$1.5330
  • 100:$1.8659
  • 10:$2.3210
  • 1:$2.5800
SIR882DP-T1-GE3
DISTI # SIR882DP-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 100V 17.6A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR882DP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 30000:$1.0379
  • 18000:$1.0669
  • 12000:$1.0969
  • 6000:$1.1439
  • 3000:$1.1789
SIR882DP-T1-GE3
DISTI # 94T2661
Vishay IntertechnologiesMOSFET, N CH, 100V, 60A, POWERPAK SO-8,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0071ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.2V RoHS Compliant: Yes0
  • 1000:$1.5100
  • 500:$1.7500
  • 250:$2.0100
  • 100:$2.2600
  • 50:$2.5000
  • 25:$2.7000
  • 1:$2.8400
SIR882DP-T1-GE3
DISTI # 86R3813
Vishay IntertechnologiesMOSFET, N CH, 100V, 60A, POWERPAK SO-8, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0071ohm,Rds(on) Test Voltage Vgs:10V,Power Dissipation Pd:83WRoHS Compliant: Yes0
  • 10000:$1.0200
  • 6000:$1.0600
  • 4000:$1.1000
  • 2000:$1.2200
  • 1000:$1.2800
  • 1:$1.3600
SIR882DP-T1-GE3
DISTI # 78-SIR882DP-T1-GE3
Vishay IntertechnologiesMOSFET 100 Volts 60 Amps 83 Watts
RoHS: Compliant
0
  • 1:$2.5100
  • 10:$2.0900
  • 100:$1.6200
  • 500:$1.4100
  • 1000:$1.1700
  • 3000:$1.0900
  • 6000:$1.0500
SIR882DP-T1-GE3Vishay SiliconixPOWER FIELD-EFFECT TRANSISTOR, 60A I(D), 100V, 0.0087OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET54
    SIR882DP-T1-GE3
    DISTI # 1859000
    Vishay IntertechnologiesMOSFET,N CH,DIODE,100V,60A,PPAKSO8
    RoHS: Compliant
    6
    • 500:$2.1400
    • 100:$2.4400
    • 10:$3.1600
    • 1:$3.8000
    SIR882DP-T1-GE3Vishay IntertechnologiesMOSFET 100 Volts 60 Amps 83 WattsAmericas - 6000
      SIR882DP-T1-GE3
      DISTI # 1859000
      Vishay IntertechnologiesMOSFET,N CH,DIODE,100V,60A,PPAKSO80
      • 500:£1.0900
      • 250:£1.1700
      • 100:£1.2400
      • 10:£1.6200
      • 1:£2.1900
      영상 부분 # 설명
      SIR882DP-T1-GE3

      Mfr.#: SIR882DP-T1-GE3

      OMO.#: OMO-SIR882DP-T1-GE3

      MOSFET 100 Volts 60 Amps 83 Watts
      SIR882DP

      Mfr.#: SIR882DP

      OMO.#: OMO-SIR882DP-1190

      신규 및 오리지널
      SIR882DP-T1-GE3

      Mfr.#: SIR882DP-T1-GE3

      OMO.#: OMO-SIR882DP-T1-GE3-VISHAY

      MOSFET N-CH 100V 60A PPAK SO-8
      SIR882DP-T1-GE3/R882

      Mfr.#: SIR882DP-T1-GE3/R882

      OMO.#: OMO-SIR882DP-T1-GE3-R882-1190

      신규 및 오리지널
      SIR882DP-TI-GE3

      Mfr.#: SIR882DP-TI-GE3

      OMO.#: OMO-SIR882DP-TI-GE3-1190

      신규 및 오리지널
      유효성
      재고:
      Available
      주문 시:
      5000
      수량 입력:
      SIR882DP-T1-GE3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
      참고 가격(USD)
      수량
      단가
      내선 가격
      1
      US$1.53
      US$1.53
      10
      US$1.45
      US$14.54
      100
      US$1.38
      US$137.70
      500
      US$1.30
      US$650.25
      1000
      US$1.22
      US$1 224.00
      2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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