SIS890DN-T1-GE3

SIS890DN-T1-GE3
Mfr. #:
SIS890DN-T1-GE3
제조사:
Vishay / Siliconix
설명:
MOSFET 100V Vds 20V Vgs PowerPAK 1212-8
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
SIS890DN-T1-GE3 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
SIS890DN-T1-GE3 추가 정보
제품 속성
속성 값
제조사:
비쉐이
제품 카테고리:
MOSFET
RoHS:
E
기술:
장착 스타일:
SMD/SMT
패키지/케이스:
PowerPAK-1212-8
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
100 V
Id - 연속 드레인 전류:
30 A
Rds On - 드레인 소스 저항:
19.5 mOhms
Vgs th - 게이트 소스 임계 전압:
1.5 V
Vgs - 게이트 소스 전압:
20 V
Qg - 게이트 차지:
29 nC
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
52 W
구성:
하나의
채널 모드:
상승
상표명:
TrenchFET
포장:
키:
1.04 mm
길이:
3.3 mm
시리즈:
SIS
트랜지스터 유형:
1 N-Channel
너비:
3.3 mm
상표:
비쉐이 / 실리콘닉스
순방향 트랜스컨덕턴스 - 최소:
25 S
가을 시간:
9 ns
상품 유형:
MOSFET
상승 시간:
12 ns
공장 팩 수량:
3000
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
16 ns
일반적인 켜기 지연 시간:
10 ns
부품 번호 별칭:
SIS890DN-GE3
Tags
SIS89, SIS8, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 100 V 23.5 mOhm 52 W TrenchFET Power Mosfet - PowerPAK-1212-8
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:30A; On Resistance Rds(On):0.0195Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V Rohs Compliant: Yes
***nell
MOSFET, N-CH, 100V, PPAK-1212; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0195ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:52W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
ThunderFET® Power MOSFETs
Vishay Siliconix ThunderFET® Power MOSFETs offer the lowest values of on-resistance in the industry for 100V MOSFETs with 4.5V ratings. In addition to the product of on-resistance and gate charge - a key figure-of-merit (FOM) for MOSFETs in DC-DC Converter applications is also best in class. For designers, the lower on-resistance translates into lower conduction losses and reduced power consumption for energy-saving green solutions. These devices are optimized for primary side switching and secondary side synchronous rectification in isolated DC/DC power supply designs for telecom brick and bus converter applications. The MOSFETs' 4.5 V rating for on-resistance allows a wide range of PWM and gate driver ICs to be considered.
부분 # 제조 설명 재고 가격
SIS890DN-T1-GE3
DISTI # V72:2272_07434473
Vishay IntertechnologiesTrans MOSFET N-CH 100V 8.8A 8-Pin PowerPAK 1212 T/R
RoHS: Compliant
2450
  • 1000:$0.6140
  • 500:$0.6955
  • 250:$0.7063
  • 100:$0.7846
  • 25:$0.9612
  • 10:$0.9649
  • 1:$1.1125
SIS890DN-T1-GE3
DISTI # SIS890DN-T1-GE3CT-ND
Vishay SiliconixMOSFET N-CH 100V 30A 1212-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
36In Stock
  • 1000:$0.6883
  • 500:$0.8718
  • 100:$1.1242
  • 10:$1.4220
  • 1:$1.6100
SIS890DN-T1-GE3
DISTI # SIS890DN-T1-GE3DKR-ND
Vishay SiliconixMOSFET N-CH 100V 30A 1212-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
36In Stock
  • 1000:$0.6883
  • 500:$0.8718
  • 100:$1.1242
  • 10:$1.4220
  • 1:$1.6100
SIS890DN-T1-GE3
DISTI # SIS890DN-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CH 100V 30A 1212-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
On Order
  • 3000:$0.6237
SIS890DN-T1-GE3
DISTI # 31038280
Vishay IntertechnologiesTrans MOSFET N-CH 100V 8.8A 8-Pin PowerPAK 1212 T/R
RoHS: Compliant
3000
  • 3000:$0.6804
SIS890DN-T1-GE3
DISTI # 31016418
Vishay IntertechnologiesTrans MOSFET N-CH 100V 8.8A 8-Pin PowerPAK 1212 T/R
RoHS: Compliant
2450
  • 1000:$0.6140
  • 500:$0.6955
  • 250:$0.7063
  • 100:$0.7846
  • 25:$0.9612
  • 13:$0.9649
SIS890DN-T1-GE3
DISTI # SIS890DN-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 100V 8.8A 8-Pin PowerPAK T/R - Tape and Reel (Alt: SIS890DN-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 3000:$0.7249
  • 6000:$0.7029
  • 12000:$0.6749
  • 18000:$0.6559
  • 30000:$0.6379
SIS890DN-T1-GE3
DISTI # SIS890DN-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 100V 8.8A 8-Pin PowerPAK T/R (Alt: SIS890DN-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Asia - 0
    SIS890DN-T1-GE3
    DISTI # SIS890DN-T1-GE3
    Vishay IntertechnologiesTrans MOSFET N-CH 100V 8.8A 8-Pin PowerPAK T/R (Alt: SIS890DN-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel
    Europe - 0
    • 3000:€0.9729
    • 6000:€0.6979
    • 12000:€0.5659
    • 18000:€0.4999
    • 30000:€0.4789
    SIS890DN-T1-GE3
    DISTI # 70AC6484
    Vishay IntertechnologiesTrans MOSFET N-CH 100V 8.8A 8-Pin PowerPAK T/R - Product that comes on tape, but is not reeled (Alt: 70AC6484)
    RoHS: Compliant
    Min Qty: 1
    Container: Ammo Pack
    Americas - 0
    • 1:$1.6100
    • 25:$1.4200
    • 50:$1.2700
    • 100:$1.1200
    • 250:$0.9980
    • 500:$0.8710
    • 1000:$0.6880
    SIS890DN-T1-GE3
    DISTI # 70AC6484
    Vishay Intertechnologies 2885
    • 1:$1.6100
    • 25:$1.4200
    • 50:$1.2700
    • 100:$1.1200
    • 250:$0.9980
    • 500:$0.8710
    • 1000:$0.6880
    SIS890DN-T1-GE3.
    DISTI # 30AC0125
    Vishay IntertechnologiesN-CHANNEL 100V POWERPAK 1212-8 THUNDERFET MOSFET 23.5MOHM@10V , ROHS COMPLIANT: YES0
    • 1:$0.6750
    • 3000:$0.6750
    SIS890DN-T1-GE3
    DISTI # 78-SIS890DN-T1-GE3
    Vishay IntertechnologiesMOSFET 100V Vds 20V Vgs PowerPAK 1212-8
    RoHS: Compliant
    4625
    • 1:$1.4200
    • 10:$1.1700
    • 100:$0.8960
    • 500:$0.7700
    • 1000:$0.6760
    • 3000:$0.6750
    SIS890DN-T1-GE3
    DISTI # 2283693
    Vishay IntertechnologiesMOSFET, N-CH, 100V, PPAK-1212
    RoHS: Compliant
    2001
    • 1:$2.2500
    • 10:$1.8500
    • 100:$1.4200
    • 500:$1.2200
    • 1000:$1.0800
    • 3000:$1.0800
    SIS890DN-T1-GE3
    DISTI # 2283693
    Vishay IntertechnologiesMOSFET, N-CH, 100V, PPAK-1212
    RoHS: Compliant
    2371
    • 5:£1.1100
    • 25:£1.0000
    • 100:£0.7680
    • 250:£0.7150
    • 500:£0.6610
    SIS890DN-T1-GE3
    DISTI # C1S803603778538
    Vishay IntertechnologiesTrans MOSFET N-CH 100V 8.8A 8-Pin PowerPAK 1212 T/R
    RoHS: Compliant
    2450
    • 250:$0.7057
    • 100:$0.7841
    • 25:$0.9602
    • 10:$0.9640
    SIS890DN-T1-GE3Vishay IntertechnologiesMOSFET 100V Vds 20V Vgs PowerPAK 1212-8Americas - 15000
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      Mfr.#: 12065A103JAT2A

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      유효성
      재고:
      15
      주문 시:
      1998
      수량 입력:
      SIS890DN-T1-GE3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
      참고 가격(USD)
      수량
      단가
      내선 가격
      1
      US$1.41
      US$1.41
      10
      US$1.16
      US$11.60
      100
      US$0.90
      US$89.50
      500
      US$0.77
      US$384.50
      1000
      US$0.61
      US$607.00
      2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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