NXH80B120H2Q0SG

Mfr. #:: NXH80B120H2Q0SG
제조사:: ON Semiconductor
설명:: IGBT Modules PIM 1200V 40A DU BST SiC DIODE
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: NXH80B120H2Q0SG 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:: NXH80B120H2Q0SG 추가 정보

제품 속성
속성 값

제조사:: 온세미컨덕터

제품 카테고리:: IGBT 모듈

RoHS:: Y

기술:: SiC

제품:: IGBT 탄화규소 모듈

구성:: 듀얼

컬렉터-이미터 전압 VCEO 최대:: 1200 V

수집기-이미터 포화 전압:: 2.2 V

25C에서 연속 수집기 전류:: 40 A

게이트-이미터 누설 전류:: 200 nA

Pd - 전력 손실:: 103 W

패키지/케이스:: Q0BOOST

최소 작동 온도:: - 40 C

최대 작동 온도:: + 125 C

포장:: 쟁반

상표:: 온세미컨덕터

장착 스타일:: 프레스핏

최대 게이트 이미터 전압:: 20 V

상품 유형:: IGBT 모듈

공장 팩 수량:: 24

하위 카테고리:: IGBT

Tags: NXH8, NXH

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

NXH80B120H2Q0SG 설명

***emi: Power Integrated Module, Dual Boost, 1200 V, 40 A IGBT + 1200 V, 15 A SiC Diode Bare copper DBC

***ical: Trans IGBT Module N-CH 1200V 41A 103000mW 20-Pin Case 180AJ Tray

***et Europe: Transistor IGBT Module N-CH 1.2kV 40A ±20V Screw Tray

***ark: Igbt, Module, N-Ch, 1.2Kv, 40A; Transistor Polarity:n Channel; Dc Collector Current:40A; Collector Emitter Saturation Voltage Vce(On):2.2V; Power Dissipation Pd:103W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Rohs Compliant: Yes

NXH80B120H2Q0SG 추가 정보

NXH80B120H2Q0SG Power Integrated Module: ON Semiconductor NXH80B120H2Q0SG Power Integrated Module (PIM) with a dual boost stage consists of two 40A/1200V IGBTs. This module includes two 15A/1200V silicon carbide diodes, two 25A/1600V anti-parallel diodes for the IGBTs, two 25A/1600V bypass rectifiers, and an on-board thermistor. Typical applications include solar inverter and Uninterruptible Power Supplies (UPS).

Wide Bandgap SiC Devices: ON Semiconductor Wide Bandgap Silicon Carbide (SiC) Devices incorporate a completely new technology that provides superior switching performance and higher reliability compared to silicon. The system benefits include the highest efficiency, faster-operating frequency, increased power density, reduced EMI, and reduced system size and cost. ON Semiconductor’s SiC portfolio includes 650V and 1200V diodes, 650V and 1200V IGBT and SiC diode Power Integrated Modules (PIMs), 1200V MOSFETs and SiC MOSFET drivers, and AEC-Q100 qualified devices.

SiC Diodes and IGBT Power Integrated Modules: ON Semiconductor Silicon Carbide (SiC) Diodes and IGBT Power Integrated Modules (PIM) provide lower conduction and switching losses. These integrated high-speed field stop IGBT and SiC diodes feature built-in Negative Temperature Co-efficient (NTC) for temperature monitoring. The SiC diodes and IGBT PIMs are optimized for solar inverters, UPS, or power stages that need a more compact design.

Solutions for Energy Infrastructure: ON Semiconductor Solutions for Energy Infrastructure address the landscape for energy generation, distribution, and storage that is rapidly evolving to fulfill targets set by government policy and increasing consumption. Heightened efficiency targets, reductions of CO2 emissions, and a focus on renewable and clean energy are key factors in this Energy Infrastructure Evolution. ON Semiconductor offers a comprehensive portfolio of energy efficient solutions to serve the demanding needs of high-power applications including Silicon Carbide (SiC) Diodes, Intelligent Power Modules, and Current Sense Amplifiers.

Market price

부분 #	제조	설명	재고	가격
NXH80B120H2Q0SG DISTI # V99:2348_18980267	ON Semiconductor	PIM 1200V, 40A DUAL BOOST	24	25:$71.0800 10:$73.9100 5:$75.8500 1:$77.2600
NXH80B120H2Q0SG DISTI # NXH80B120H2Q0SGOS-ND	ON Semiconductor	PIM 1200V, 40A DUAL BOOST RoHS: Compliant Min Qty: 1 Container: Tray	24In Stock	24:$75.0200 1:$79.8600
NXH80B120H2Q0SG DISTI # 26992226	ON Semiconductor	PIM 1200V, 40A DUAL BOOST	24	1:$77.2600
NXH80B120H2Q0SG DISTI # NXH80B120H2Q0SG	ON Semiconductor	Dual Boost Power Module with SiC Rectifier 1200 V 40 A IGBT Tray - Trays (Alt: NXH80B120H2Q0SG) RoHS: Compliant Min Qty: 6000 Container: Tray	Americas - 0
NXH80B120H2Q0SG DISTI # 48AC1760	ON Semiconductor	IGBT, MODULE, N-CH, 1.2KV, 40A,Transistor Polarity:N Channel,DC Collector Current:40A,Collector Emitter Saturation Voltage Vce(on):2.2V,Power Dissipation Pd:103W,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case RoHS Compliant: Yes	22	25:$73.3300 10:$74.8000 5:$76.7800 1:$78.2100
NXH80B120H2Q0SG DISTI # 863-NXH80B120H2Q0SG	ON Semiconductor	IGBT Modules PIM 1200V 40A DU BST SiC DIODE RoHS: Compliant	23	1:$77.4400 5:$76.0200 10:$74.0600 25:$72.6000
NXH80B120H2Q0SG DISTI # 1723298	ON Semiconductor	INTELLIGENT POWER MODULE 40A 1200V, PU	24	24:£51.6730
NXH80B120H2Q0SG DISTI # 2835630	ON Semiconductor	IGBT, MODULE, N-CH, 1.2KV, 40A RoHS: Compliant	22	24:$113.0600 1:$120.3500
NXH80B120H2Q0SG DISTI # 2835630	ON Semiconductor	IGBT, MODULE, N-CH, 1.2KV, 40A	22	50:£54.2800 10:£55.3900 5:£58.0000 1:£59.0900

NXH80B120H2Q0SG

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes