PD84001

Mfr. #:: PD84001
제조사:: STMicroelectronics
설명:: RF MOSFET Transistors RF Pwr Transistors LDMOST Plastic Fam
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: PD84001 데이터 시트
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ECAD Model:
추가 정보:: PD84001 추가 정보 PD84001 Product Details

제품 속성
속성 값

제조사:: ST마이크로일렉트로닉스

제품 카테고리:: RF MOSFET 트랜지스터

RoHS:: Y

트랜지스터 극성:: N-채널

기술:: 시

Id - 연속 드레인 전류:: 1.5 A

Vds - 드레인 소스 항복 전압:: 18 V

얻다:: 15 dB

출력 파워:: 1 W

최소 작동 온도:: - 65 C

최대 작동 온도:: + 150 C

장착 스타일:: SMD/SMT

패키지/케이스:: SOT-89-4

포장:: 릴

구성:: 하나의

동작 주파수:: 1 GHz

시리즈:: PD84001

유형:: RF 전력 MOSFET

상표:: ST마이크로일렉트로닉스

채널 모드:: 상승

습기에 민감한:: 네

Pd - 전력 손실:: 6 W

상품 유형:: RF MOSFET 트랜지스터

공장 팩 수량:: 2500

하위 카테고리:: MOSFET

Vgs - 게이트 소스 전압:: 15 V

단위 무게:: 0.004603 oz

Tags: PD84001, PD8400, PD84, PD8

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

PD84001 설명

***ure Electronics: PD84001 Series 870 MHz 6 W 18 V N-Channel RF Power Transistor - SOT-89

***et: Transistor RF FET N-CH 18V 1.5A 870MHz 4-Pin SOT-89 T/R

***ark: N CHANNEL RF POWER TRANSISTOR, LdmoST, 18V, 1.5A, SOT-89; Drain Source Voltage Vds:18V; Continuous Drain Current Id:1.5A; Power Dissipation:6W; Operating Frequency Min:-; Operating Frequency Max:1GHz; No. of Pins:3Pins; MSL:- RoHS Compliant: Yes

***r Electronics: RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

***ure Electronics: N-Channel 40 V 4 W Surface Mount LDMOS RF Mosfet - SOT-89

***icroelectronics: 4W 13.6V 870MHz LDMOS in SOT89 plastic package

***roFlash: RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

***ark: N CHANNEL RF POWERT TRANSISTOR, LdmoST, 40V, 2A, SOT-89; Drain Source Voltage Vds:40V; Continuous Drain Current Id:2A; Power Dissipation:6W; Operating Frequency Min:-; Operating Frequency Max:-; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes

***p One Stop Global: Trans RF MOSFET N-CH 25V 2A 4-Pin(3+Tab) SOT-89 T/R

*** Electronic Components: RF MOSFET Transistors RF PWR transistor LdmoST plastic fam

***nell: MOSFET, RF, N-CH, 25V, 2A, SOT-89-3; Drain Source Voltage Vds: 25V; Continuous Drain Current Id: 2A; Power Dissipation Pd: 6W; Operating Frequency Min: -; Operating Frequency Max: 1GHz; RF Transistor Case: SOT-89; No. of Pins:

***r Electronics: RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

***hard Electronics: ON SEMICONDUCTOR PCP1402-TD-H MOSFET Transistor, N Channel, 1.2 A, 250 V, 1.8 ohm, 10 V, 3.5 V

***ure Electronics: Single N-Channel 250 V 3.5 W 4.2 nC Silicon Surface Mount Mosfet - SOT-89

***emi: Single N-Channel Power MOSFET, 250V, 1.2A, 2.4Ω

***ical: Trans MOSFET N-CH 250V 1.2A 4-Pin(3+Tab) SOT-89 T/R

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:1.2A; On Resistance Rds(On):1.8Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V Rohs Compliant: Yes

***nell: NCH 10V DRIVE SERIES; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.2A; Drain Source Voltage Vds: 250V; On Resistance Rds(on): 1.8ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V; Power Dissipation Pd: 3.5W; Transistor Case Style: SOT-89; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

***et: Trans MOSFET P-CH 100V 1.5A 3-Pin PCP

***hard Electronics: 2SJ670 - P-CHANNEL SILICON MOSFE

***nell: MOSFET, P CH, 100V, 1.5A, SOT89; Transistor Polarity:P-Channel; Current Id Max:-1.5A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):410mohm; Rds(on) Test Voltage Vgs:-10V; Voltage Vgs Max:20V; Power Dissipation:3.5W; Transistor Case Style:SOT-89; No. of Pins:3

***ure Electronics: N-Channel 60 V 3.2 A 1 W Surface Mount OptiMOS Small-Signal-Transistor - SOT-89

***ow.cn: Trans MOSFET N-CH 60V 3.2A Automotive 4-Pin(3+Tab) SOT-89 T/R

***nell: MOSFET, AEC-Q101, N-CH, 60V, SOT-89; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.2A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.047ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 1W; Transistor Case Style: SOT-89; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 3 Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: All Small Signal n-channel products are suitable for automotive applications (excluding 2N7002). | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Qualified according to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Onboard charger; Telecom

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 3.2 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 60 / Gate-Source Voltage V = 20 / Fall Time ns = 2.1 / Rise Time ns = 2.6 / Turn-OFF Delay Time ns = 13 / Turn-ON Delay Time ns = 5.6 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-89 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 1

***p One Stop Global: Trans MOSFET P-CH 250V 0.19A Automotive 4-Pin(3+Tab) SOT-89 T/R

***ure Electronics: Single P-Channel 250 V 12 Ohm 4.9 nC SIPMOS® Small Signal Mosfet - SOT-89

***ment14 APAC: MOSFET, P-CH, -250V, -0.19A, SOT-89-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-190mA; Source Voltage Vds:-250V; On

***nell: MOSFET, P-CH, -250V, -0.19A, SOT-89-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -190mA; Drain Source Voltage Vds: -250V; On Resistance Rds(on): 7.7ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1.5V; Power Dissipation Pd: 1W; Transistor Case Style: SOT-89; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Operating Temperature Min: -55°C

***ineon: Infineons highly innovative OptiMOS families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Small Signal packages approved to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Notebook; Onboard charger

***trelec: Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 190 / Drain-Source Voltage (Vds) V = 250 / ON Resistance (Rds(on)) Ohm = 12 / Gate-Source Voltage V = 20 / Fall Time ns = 50 / Rise Time ns = 5.2 / Turn-OFF Delay Time ns = 72 / Turn-ON Delay Time ns = 4.7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-89 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 1

Market price

부분 #	제조	설명	재고	가격
PD84001 DISTI # V72:2272_17706727	STMicroelectronics	Trans RF MOSFET N-CH 18V 1.5A 4-Pin(3+Tab) SOT-89 T/R RoHS: Compliant	1839	1000:$1.2501 500:$1.4340 250:$1.6263 100:$1.6303 25:$1.9179 10:$1.9542 1:$2.2149
PD84001 DISTI # 497-8294-1-ND	STMicroelectronics	FET RF 18V 870MHZ RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	3360In Stock	1000:$1.5372 500:$1.8184 100:$2.1745 10:$2.6620 1:$2.9500
PD84001 DISTI # 497-8294-6-ND	STMicroelectronics	FET RF 18V 870MHZ RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	3360In Stock	1000:$1.5372 500:$1.8184 100:$2.1745 10:$2.6620 1:$2.9500
PD84001 DISTI # 497-8294-2-ND	STMicroelectronics	FET RF 18V 870MHZ RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Temporarily Out of Stock	5000:$1.3559 2500:$1.4014
PD84001 DISTI # 30299227	STMicroelectronics	Trans RF MOSFET N-CH 18V 1.5A 4-Pin(3+Tab) SOT-89 T/R RoHS: Compliant	2500	2500:$1.0944
PD84001 DISTI # 26931638	STMicroelectronics	Trans RF MOSFET N-CH 18V 1.5A 4-Pin(3+Tab) SOT-89 T/R RoHS: Compliant	1839	1000:$1.2501 500:$1.4340 250:$1.6263 100:$1.6303 25:$1.9179 10:$1.9542 6:$2.2149
PD84001 DISTI # PD84001	STMicroelectronics	Trans MOSFET N-CH 18V 1.5A 4-Pin(3+Tab) SOT-89 T/R - Tape and Reel (Alt: PD84001) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$1.2900 5000:$1.2900 10000:$1.1900 15000:$1.0900 25000:$1.0900
PD84001 DISTI # PD84001	STMicroelectronics	Trans MOSFET N-CH 18V 1.5A 4-Pin(3+Tab) SOT-89 T/R (Alt: PD84001) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	2500:€1.2749 5000:€1.0629 10000:€0.9809 15000:€0.9109 25000:€0.8499
PD84001 DISTI # PD84001	STMicroelectronics	Trans MOSFET N-CH 18V 1.5A 4-Pin(3+Tab) SOT-89 T/R (Alt: PD84001) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0
PD84001 DISTI # 06X0640	STMicroelectronics	RF FET Transistor, 18 V, 1.5 A, 6 W, 1 GHz, SOT-89 RoHS Compliant: Yes	915	1:$2.8200 10:$2.4300 25:$2.2800 50:$2.1200 100:$1.9700 250:$1.8600 500:$1.7600 1000:$1.4800
PD84001 DISTI # 511-PD84001	STMicroelectronics	RF MOSFET Transistors RF Pwr Transistors LDMOST Plastic Fam RoHS: Compliant	2272	1:$2.6800 10:$2.2800 100:$1.8200 500:$1.6000 1000:$1.3200 2500:$1.2300 5000:$1.1900
PD84001 DISTI # 9172738P	STMicroelectronics	RF POWER LDMOS TRANSISTOR 1W SOT-89, RL	4960	25:£0.7140
PD84001 DISTI # PD84001	STMicroelectronics	RF POWER TRANSISTOR RoHS: Compliant	0	2500:$1.3300
PD84001	STMicroelectronics	INSTOCK	2891
PD84001 DISTI # 2341737	STMicroelectronics	MOSFET, RF, N-CH, 18V, 1.5A, SOT-89-3 RoHS: Compliant	915	1:$4.2500 10:$3.6200 100:$2.8800 500:$2.5400 1000:$2.0900 2500:$1.9500 5000:$1.8800 10000:$1.8100
PD84001 DISTI # C1S730200501233	STMicroelectronics	Trans RF MOSFET N-CH 18V 1.5A 4-Pin(3+Tab) SOT-89 T/R RoHS: Compliant	2500	2500:$1.1600
PD84001 DISTI # C1S730200364094	STMicroelectronics	Trans RF MOSFET N-CH 18V 1.5A 4-Pin(3+Tab) SOT-89 T/R RoHS: Compliant	1839	250:$1.6263 100:$1.6303 25:$1.9179 10:$1.9542 1:$2.2149
PD84001 DISTI # 2341737	STMicroelectronics	MOSFET, RF, N-CH, 18V, 1.5A, SOT-89-3 RoHS: Compliant	915	1:£2.0700 10:£1.6800 100:£1.4000 250:£1.3400 500:£1.2300

영상	부분 #	설명
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	Mfr.#: LT3094EMSE#PBF OMO.#: OMO-LT3094EMSE-PBF	LDO Voltage Regulators -20V, 500mA Ultralow Noise/PSRR LDO
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	Mfr.#: VX7805-500 OMO.#: OMO-VX7805-500-CUI	DC DC CONVERTER 5V 2.5W
	Mfr.#: PD84002 OMO.#: OMO-PD84002-STMICROELECTRONICS	FET RF 25V 870MHZ
	Mfr.#: 12103C106KAT2A OMO.#: OMO-12103C106KAT2A-AVX	Multilayer Ceramic Capacitors MLCC - SMD/SMT 25volts 10uF 10% X7R
	Mfr.#: NSVJ5908DSG5T1G OMO.#: OMO-NSVJ5908DSG5T1G-ON-SEMICONDUCTOR	N-Channel JfeJFET15 V, 10 To 32 mA, 35 mS, Dual
	Mfr.#: CBC3225T220MRV OMO.#: OMO-CBC3225T220MRV-TAIYO-YUDEN	신규 및 오리지널

PD84001

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes