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IKW25N120T2

IKW25N120T2
Mfr. #:
IKW25N120T2
제조사:
Infineon Technologies
설명:
IGBT Transistors LOW LOSS DuoPack 1200V 25A
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IKW25N120T2 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
IKW25N120T2 추가 정보
제품 속성
속성 값
제조사
인피니언 테크놀로지스
제품 카테고리
IGBT - 싱글
시리즈
TrenchStopR
포장
튜브
부분 별칭
IKW25N120T2FKSA1 IKW25N120T2XK SP000244960
단위 무게
1.340411 oz
장착 스타일
구멍을 통해
패키지 케이스
TO-247-3
입력 유형
기준
장착형
구멍을 통해
공급자-장치-패키지
PG-TO247-3
구성
하나의
파워맥스
349W
역복구-시간-trr
195ns
전류 수집기 Ic-Max
50A
Voltage-Collector-Emitter-Breakdown-Max
1200V
IGBT형
도랑
전류 수집기 펄스 Icm
100A
Vce-on-Max-Vge-Ic
2.2V @ 15V, 25A
스위칭 에너지
2.9mJ
게이트 차지
120nC
Td-on-off-25°C
27ns/265ns
시험조건
600V, 25A, 16.4 Ohm, 15V
최대 작동 온도
+ 150 C
최소 작동 온도
- 40 C
컬렉터-이미터-전압-VCEO-최대
1200 V
컬렉터-이미터-포화-전압
2.2 V
최대 게이트 이미 터 전압
+/- 20 V
연속 수집기 전류 Ic-Max
50 A
Tags
IKW25N120T2, IKW25N120T, IKW25N, IKW25, IKW2, IKW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 1200V 50A 349000mW Automotive 3-Pin(3+Tab) TO-247 Tube
***ment14 APAC
IGBT+ DIODE,1200V,25A,TO247; Transistor Type:IGBT; DC Collector Current:25A; Collector Emitter Voltage Vces:2.2V; Power Dissipation Pd:349W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-247; No. of Pins:3; Power Dissipation Max:349W
***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device, due to combination of trenchstop-cell and fieldstop concept. The combination of IGBT with soft recovery Emitter Controled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled HE diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar inverters; Motor control; Major home appliances; Welding; Other hard switching applications
1200V Gen8 IGBTs
Infineon 1200V Gen8 IGBTs feature IR's latest generation trench gate field stop technology delivered in industry standard TO-247 packages to provide best-in-class performance for industrial and energy-saving applications. The Gen8 technology offers softer turn-off characteristics ideal for motor drive applications, minimizing dv/dt to reduce EMI, and over-voltage, increasing reliability and ruggedness. These Gen8 IGBTs have current ratings from 8A up to 60A with typical VCE(ON) of 1.7V, and a short-circuit rating of 10µs to reduce power dissipation, resulting in increased power density and robustness. Using thin wafer technology, 1200V Gen8 IGBTs deliver improved thermal resistance and maximum junction temperature up to 175°C.Learn More
부분 # 제조 설명 재고 가격
IKW25N120T2FKSA1
DISTI # V99:2348_06377579		Infineon Technologies AGTrans IGBT Chip N-CH 1200V 50A 349000mW 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		168
  • 1000:$3.6870
  • 500:$4.2890
  • 100:$4.9710
  • 10:$6.0550
  • 1:$7.4327
IKW25N120T2FKSA1
DISTI # V36:1790_06377579		Infineon Technologies AGTrans IGBT Chip N-CH 1200V 50A 349000mW 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		0
    IKW25N120T2FKSA1
    DISTI # IKW25N120T2FKSA1-ND    		Infineon Technologies AGIGBT 1200V 50A 349W TO247-3
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		687In Stock
    • 720:$4.4315
    • 240:$5.0891
    • 25:$5.8612
    • 10:$6.1470
    • 1:$6.8000
    IKW25N120T2FKSA1
    DISTI # 27551382    		Infineon Technologies AGTrans IGBT Chip N-CH 1200V 50A 349000mW 3-Pin(3+Tab) TO-247 Tube
    RoHS: Compliant    		168
    • 1000:$3.9635
    • 500:$4.6107
    • 100:$5.3438
    • 10:$6.5091
    • 2:$7.2638
    IKW25N120T2
    DISTI # 30580818    		Infineon Technologies AGTrans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-247
    RoHS: Compliant    		23
    • 50:$4.1310
    • 6:$4.3605
    IKW25N120T2
    DISTI # IKW25N120T2    		Infineon Technologies AGTrans IGBT Chip N-CH 1.2KV 50A 3-Pin TO-247 Tube (Alt: IKW25N120T2)
    RoHS: Compliant
    Min Qty: 240
    Container: Tube    		Asia - 1200
    • 12000:$3.9462
    • 6000:$4.0043
    • 2400:$4.0640
    • 1200:$4.1256
    • 720:$4.2545
    • 480:$4.3918
    • 240:$4.5382
    IKW25N120T2
    DISTI # SP000244960    		Infineon Technologies AGTrans IGBT Chip N-CH 1.2KV 50A 3-Pin TO-247 Tube (Alt: SP000244960)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		Europe - 1520
    • 100:€2.9900
    • 500:€2.9900
    • 1000:€2.9900
    • 50:€3.0900
    • 10:€3.2900
    • 25:€3.2900
    • 1:€3.3900
    IKW25N120T2
    DISTI # IKW25N120T2    		Infineon Technologies AGTrans IGBT Chip N-CH 1.2KV 50A 3-Pin TO-247 Tube - Bulk (Alt: IKW25N120T2)
    RoHS: Not Compliant
    Min Qty: 106
    Container: Bulk    		Americas - 0
    • 1060:$2.8900
    • 530:$2.9900
    • 318:$3.0900
    • 212:$3.1900
    • 106:$3.3900
    IKW25N120T2
    DISTI # IKW25N120T2FKSA1    		Infineon Technologies AGTrans IGBT Chip N-CH 1.2KV 50A 3-Pin TO-247 Tube - Rail/Tube (Alt: IKW25N120T2FKSA1)
    RoHS: Compliant
    Min Qty: 240
    Container: Tube    		Americas - 0
    • 2400:$3.3900
    • 1440:$3.4900
    • 960:$3.5900
    • 480:$3.6900
    • 240:$3.8900
    IKW25N120T2XK
    DISTI # IKW25N120T2XK    		Infineon Technologies AG- Bulk (Alt: IKW25N120T2XK)
    RoHS: Not Compliant
    Min Qty: 105
    Container: Bulk    		Americas - 0
    • 1050:$2.9900
    • 525:$3.0900
    • 315:$3.1900
    • 210:$3.2900
    • 105:$3.3900
    IKW25N120T2FKSA1
    DISTI # 13T9447    		Infineon Technologies AGIGBT+ DIODE,1200V,25A,TO247,DC Collector Current:25A,Collector Emitter Saturation Voltage Vce(on):2.2V,Power Dissipation Pd:349W,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case Style:TO-247,No. of Pins:3Pins,OperatingRoHS Compliant: Yes0
    • 500:$3.0200
    • 250:$3.1300
    • 100:$3.7200
    • 50:$4.2900
    • 25:$4.5800
    • 10:$5.2300
    • 1:$6.0400
    IKW25N120T2
    DISTI # 726-IKW25N120T2    		Infineon Technologies AGIGBT Transistors LOW LOSS DuoPack 1200V 25A
    RoHS: Compliant    		938
    • 1:$6.4700
    • 10:$5.8500
    • 25:$5.5800
    • 100:$4.8400
    • 250:$4.6300
    • 500:$4.2200
    IKW25N120T2Infineon Technologies AGInsulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247AD
    RoHS: Compliant    		72
    • 1000:$3.1100
    • 500:$3.2700
    • 100:$3.4000
    • 25:$3.5500
    • 1:$3.8200
    IKW25N120T2XKInfineon Technologies AG 
    RoHS: Not Compliant    		8
    • 1000:$3.1600
    • 500:$3.3200
    • 100:$3.4600
    • 25:$3.6100
    • 1:$3.8900
    IKW25N120T2FKSA1
    DISTI # 8977403P    		Infineon Technologies AGIGBT TRENCHSTOP NCHANNEL 1.2KV 50A TO247, TU214
    • 100:£3.4450
    • 40:£3.9700
    • 20:£4.1550
    • 4:£4.3700
    IKW25N120T2FKSA1
    DISTI # 8977403    		Infineon Technologies AGIGBT TRENCHSTOP NCHANNEL 1.2KV 50A TO247, PK110
    • 100:£3.4450
    • 40:£3.9700
    • 20:£4.1550
    • 4:£4.3700
    • 2:£4.7500
    IKW25N120T2
    DISTI # IKW25N120T2    		Infineon Technologies AGTransistor: IGBT,1.2kV,50A,349W,TO247-397
    • 1:$6.2900
    • 3:$5.5300
    • 10:$4.4900
    • 25:$4.1800
    • 100:$3.7700
    IKW25N120T2FKSA1
    DISTI # 1832382    		Infineon Technologies AGIGBT+ DIODE,1200V,25A,TO247215
    • 500:£3.1500
    • 250:£3.3900
    • 100:£3.6200
    • 10:£4.3700
    • 1:£5.5900
    IKW25N120T2FKSA1
    DISTI # XSKDRABS0030961    		Infineon Technologies AGCeramic Capacitor, Multilayer, Ceramic, 6.3V,20%+Tol, 20% -Tol, X5R, 15% TC, 4.7uF, SurfaceMount,0612
    RoHS: Compliant    		1280 in Stock0 on Order
    • 1280:$4.8600
    • 240:$5.1960
    IKW25N120T2
    DISTI # IGBT2109    		Infineon Technologies AGIGBT 1200V25A1,7VTO247-3
    RoHS: Compliant    		Stock DE - 1495Stock HK - 0Stock US - 0
    • 30:$4.2600
    • 60:$4.0000
    • 90:$3.9300
    • 120:$3.8600
    • 180:$3.6300
    IKW25N120T2Infineon Technologies AG 240
    • 1:¥45.8584
    • 10:¥40.7429
    • 25:¥38.8513
    • 100:¥33.6856
    IKW25N120T2FKSA1
    DISTI # IKW25N120T2    		Infineon Technologies AG1200V 50A 349W TO247
    RoHS: Compliant    		421
    • 1:€6.9600
    • 10:€3.9600
    • 50:€2.9600
    • 100:€2.8500
    IKW25N120T2Infineon Technologies AG1200V,50A,IGBT with Anti-Parallel Diode60
    • 1:$5.7800
    • 100:$4.8200
    • 500:$4.2500
    • 1000:$4.1300
    영상 부분 # 설명
    IKW25T120

    Mfr.#: IKW25T120

    OMO.#: OMO-IKW25T120

    		 IGBT Transistors LOW LOSS DuoPack 1200V 25A
    IKW25N120H3 , 2SC5227-3

    Mfr.#: IKW25N120H3 , 2SC5227-3

    OMO.#: OMO-IKW25N120H3-2SC5227-3-1190

    		 신규 및 오리지널
    IKW25N120T

    Mfr.#: IKW25N120T

    OMO.#: OMO-IKW25N120T-1190

    		 신규 및 오리지널
    IKW25T120,K25T120

    Mfr.#: IKW25T120,K25T120

    OMO.#: OMO-IKW25T120-K25T120-1190

    		 신규 및 오리지널
    IKW25T120,K25T120,

    Mfr.#: IKW25T120,K25T120,

    OMO.#: OMO-IKW25T120-K25T120--1190

    		 신규 및 오리지널
    IKW25T1202

    Mfr.#: IKW25T1202

    OMO.#: OMO-IKW25T1202-1190

    		 신규 및 오리지널
    IKW25T120FKSA1

    Mfr.#: IKW25T120FKSA1

    OMO.#: OMO-IKW25T120FKSA1-INFINEON-TECHNOLOGIES

    		 IGBT 1200V 50A 190W TO247-3
    IKW25T120T2

    Mfr.#: IKW25T120T2

    OMO.#: OMO-IKW25T120T2-1190

    		 신규 및 오리지널
    IKW25N120H3XK

    Mfr.#: IKW25N120H3XK

    OMO.#: OMO-IKW25N120H3XK-1190

    		 IGBT Transistors IGBT PRODUCTS
    IKW25N120T2

    Mfr.#: IKW25N120T2

    OMO.#: OMO-IKW25N120T2-126

    		 IGBT Transistors LOW LOSS DuoPack 1200V 25A
    유효성
    재고:
    Available
    주문 시:
    1500
    수량 입력:
    IKW25N120T2의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$4.34
    US$4.34
    10
    US$4.12
    US$41.18
    100
    US$3.90
    US$390.15
    500
    US$3.68
    US$1 842.40
    1000
    US$3.47
    US$3 468.00
    2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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